2N6702 [ISC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2N6702 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：41K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2N6702
DESCRIPTION
·With TO-220 package
·Fast switching speed
·Low collector saturation voltage
APPLICATIONS
·Designed for converters,inverters,
pulse-width-modulated regulators
and a variety of power switching
circuits.
PINNING
PIN
1
DESCRIPTION
Base
Collector;connected to
mounting base
2
3
Emitter
Absolute maximum ratings(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
VALUE
UNIT
V
Open emitter
Open base
140
90
V
Open collector
7
V
7
10
A
ICM
Collector current(peak)
Base current
A
IB
6
A
PT
Total power dissipation
Junction temperature
Storage temperature
TC=25℃
50
W
℃
℃
Tj
150
-65~150
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Thermal resistance junction to case
VALUE
UNIT
Rth j-c
2.5
℃/W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2N6702
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
VCEO(SUS)
VCEsat-1
VCEsat-2
VBE sat
ICEV
PARAMETER
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
CONDITIONS
MIN
TYP.
MAX
UNIT
V
IC=0.01A ;IB=0
90
IC=5A;IB=0.5A
IC=7A;IB=0.7A
IC=5A;IB=0.5A
0.8
1.5
1.5
V
V
V
VCE=140V;VBE=1.5V
TC=125℃
0.1
1.0
mA
mA
IEBO
VBE=7V; IC=0
0.1
hFE-1
DC current gain
IC=0.2A ; VCE=2V
IC=5A ; VCE=2V
30
20
50
50
hFE-2
DC current gain
Cob
Output capacitance
IE=0 ; f=0.1MHz,VCB=10V
IC=0.5A ; VCE=10V
150
200
pF
fT
Transition frequency
MHz
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2N6702
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
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