2N6688 [ISC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2N6688 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：39K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2N6688
DESCRIPTION
·With TO-3 package
·Fast switching speed
·Low collector saturation voltage
APPLICATIONS
·Designed for high-power switching
circuits applications
PINNING
PIN
1
DESCRIPTION
Base
2
Emitter
Fig.1 simplified outline (TO-3) and symbol
3
Collector
Absolute maximum ratings(Ta=℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
Open emitter
VALUE
300
UNIT
V
Open base
200
V
Open collector
8
V
20
A
ICM
Collector current-peak
Collector power dissipation
Junction temperature
Storage temperature
50
A
PC
TC=25℃
200
W
℃
℃
Tj
200
Tstg
-65~200
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-c
Thermal resistance junction to case
0.875
℃/W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2N6688
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
VCEO(SUS)
VCEsat
VBEsat
ICEV
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V
Collector-emitter sustaining voltage IC=0.2A ;IB=0
Collector-emitter saturation voltage IC=20A; IB=2A
200
1.5
1.8
50
V
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
IC=20A; IB=2A
V
VCE=300V; VBE=-1.5V
VEB=8V; IC=0
μA
μA
IEBO
100
hFE-1
IC=1A ; VCE=2V
IC=10A ; VCE=2V
IC=20A ; VCE=2V
IC=1A ; VCE=10V
25
20
15
20
hFE-2
DC current gain
80
hFE-3
DC current gain
fT
Transition frequency
100
MHz
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2N6688
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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