2N6465 [ISC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2N6465 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：126K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2N6465 2N6466
DESCRIPTION
·With TO-66 package
·Excellent safe operating area
·Complement to type 2N6467 2N6468
APPLICATIONS
·For use in audio amplifier applications
PINNING(see Fig.2)
PIN
1
DESCRIPTION
Base
2
Emitter
Fig.1 simplified outline (TO-66) and symbol
3
Collector
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
110
UNIT
2N6465
2N6466
2N6465
2N6466
VCBO
Collector-base voltage
Open emitter
V
130
100
120
5
VCEO
Collector-emitter voltage
Open base
V
VEBO
IC
Emitter-base voltage
Collector current
Open collector
V
A
4
PD
Tj
Total power dissipation
Junction temperature
Storage temperature
TC=25℃
40
W
℃
℃
150
-65~150
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-c
Thermal resistance junction to case
2.5
℃/W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2N6465 2N6466
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
100
120
TYP.
MAX
UNIT
2N6465
2N6466
Collector-emitter
sustaining voltage
VCEO(SUS)
IC=50mA ;IB=0
V
VCEsat
Collector-emitter saturation voltage IC=1.5A; IB=0.15A
1.2
1.5
V
V
VBE
Base-emitter on voltage
Collector cut-off current
IC=1.5A ; VCE=4V
VCB=110V; IE=0
2N6465
2N6466
2N6465
2N6466
ICBO
10
μA
V
CB=130V; IE=0
VCE= 100V,IB=0
ICEO
Collector cut-off current
100
μA
μA
V
CE= 120V,IB=0
IEBO
hFE
fT
Emitter cut-off current
DC current gain
VEB=5V; IC=0
10
IC=1.5A ; VCE=4V
IC=0.5A ; VCE=10V
15
5
150
Transition frequency
MHz
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2N6465 2N6466
PACKAGE OUTLINE
Fig.2 outline dimensions
3
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