2N6388 [ISC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2N6388 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：122K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2N6386 2N6387 2N6388
DESCRIPTION
·With TO-220C package
·Complement to type 2N6666/6667/6668
·DARLINGTON
·High DC current gain
·Low collector saturation voltage
APPLICATIONS
·Designed for general-purpose amplifier
and low speed switching applications
PINNING
PIN
1
DESCRIPTION
Base
Collector;connected to
mounting base
2
3
Emitter
Absolute maximum ratings(Tc=25℃)
SYMBOL
PARAMETER
2N6386
CONDITIONS
VALUE
40
UNIT
VCBO
Collector-base voltage
Collector-emitter voltage
Open emitter
V
2N6387
2N6388
2N6386
2N6387
2N6388
60
80
40
VCEO
Open base
V
60
80
VEBO
Emitter-base voltage
Collector current-DC
Open collector
5
V
A
2N6386
8
IC
2N6387/6388
10
ICM
IB
Collector current-Pulse
Base current-DC
15
A
A
0.25
65
PC
Tj
Collector power dissipation
Junction temperature
Storage temperature
TC=25℃
W
℃
℃
150
-65~150
Tstg
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2N6386 2N6387 2N6388
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
2N6386
CONDITIONS
MIN
40
TYP.
MAX
UNIT
Collector-emitter
sustaining voltage
VCEO(SUS)
IC=0.2A, IB=0
V
2N6387
60
2N6388
80
2N6386
IC=3A ,IB=6mA
IC=5A ,IB=10mA
IC=8A ,IB=80mA
IC=10A ,IB=100mA
IC=3A ; VCE=3V
IC=5A ; VCE=3V
IC=8A ; VCE=3V
IC=10A ; VCE=3V
Collector-emitter
saturation voltage
VCEsat-1
VCEsat-2
VBE-1
2.0
3.0
2.8
4.5
V
V
V
V
2N6387/6388
2N6386
Collector-emitter
saturation voltage
2N6387/6388
2N6386
Base-emitter
on voltage
2N6387/6388
2N6386
Base-emitter
on voltage
VBE-2
2N6387/6388
2N6386
V
CB=40V, VBE=-1.5V
TC=125℃
CB=60V, VBE=-1.5V
TC=125℃
CB=80V, VBE=-1.5V
0.3
3.0
V
Collector
cut-off current
0.3
3.0
ICBO
mA
2N6387
V
0.3
3.0
2N6388
TC=125℃
2N6386
VCE=40V, IB=0
Collector
cut-off current
ICEO
1.0
mA
mA
2N6387
VCE=60V, IB=0
2N6388
VCE=80V, IB=0
IEBO
Emitter cut-off current
DC current gain
VEB=5V; IC=0
5.0
2N6386
IC=3A ; VCE=3V
IC=5A ; VCE=3V
IC=8A ; VCE=3V
IC=10A ; VCE=3V
IE=0 ; VCB=10V,f=0.1MHz
hFE-1
1000
100
20000
2N6387/6388
2N6386
hFE-2
DC current gain
2N6387/6388
Cob
Output capacitance
200
pF
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Thermal resistance junction to case
VALUE
1.92
UNIT
℃/W
Rth j-c
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2N6386 2N6387 2N6388
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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