2N6122 [ISC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2N6122 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：121K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2N6121 2N6122 2N6123
DESCRIPTION
·With TO-220 package
·Complement to PNP type :
2N6124 ;2N6125 ;2N6126
APPLICATIONS
·For use in power amplifier and
switching circuit applications
PINNING
PIN
1
DESCRIPTION
Base
Collector;connected to
mounting base
2
3
Emitter
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VAL
UNIT
2N6121
2N6122
2N6123
2N6121
2N6122
2N6123
45
VCBO
Collector-base voltage
Open emitter
Open base
V
60
80
45
VCEO
Collector-emitter voltage
V
60
80
VEBO
IC
ICM
IB
Emitter-base voltage
Collector current
Open collector
5
V
A
4
Collector current-peak
Base current
8
1
A
A
PT
Tj
Total power dissipation
Junction temperature
Storage temperature
TC=25℃
40
W
℃
℃
150
-65~150
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal resistance from junction to case
3.125
℃/W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2N6121 2N6122 2N6123
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
45
TYP.
MAX
UNIT
2N6121
2N6122
2N6123
Collector-emitter
sustaining voltage
VCEO(SUS)
IC=0.1A ;IB=0
V
60
80
VCEsat-1
VCEsat-2
VBE
Collector-emitter saturation voltage IC=1.5A;IB=0.15A
Collector-emitter saturation voltage IC=4.0A;IB=1.0A
0.6
1.4
1.2
V
V
V
Base-emitter on voltage
IC=1.5A ; VCE=2V
CE=45V;VBE=1.5V
V
0.1
2.0
2N6121
2N6122
2N6123
TC=125℃
CE=60V;VBE=1.5V
TC=125℃
CE=80V;VBE=1.5V
TC=125℃
V
0.1
2.0
ICEX
Collector cut-off current
mA
V
0.1
2.0
2N6121 VCE=45V;IB=0
2N6122 VCE=60V;IB=0
2N6123 VCE=80V;IB=0
VEB=5V; IC=0
ICEO
IEBO
hFE-1
Collector cut-off current
Emitter cut-off current
DC current gain
1.0
mA
mA
1.0
100
80
2N6121
25
20
10
IC=1.5A ; VCE=2V
2N6122
2N6123
2N6121
2N6122
2N6123
hFE-2
DC current gain
IC=4A ; VCE=2V
IC=1A ; VCE=4V
7
fT
Transition frequency
2.5
MHz
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2N6121 2N6122 2N6123
PACKAGE OUTLINE
Fig.2 utline dimensions(unindicated tolerance:±0.10 mm)
3
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CENTRAL
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