2N6099 [ISC]

Silicon NPN Power Transistors; 硅NPN功率晶体管
2N6099
型号: 2N6099
厂家: INCHANGE SEMICONDUCTOR COMPANY LIMITED    INCHANGE SEMICONDUCTOR COMPANY LIMITED
描述:

Silicon NPN Power Transistors
硅NPN功率晶体管

晶体 晶体管 局域网
文件: 总3页 (文件大小:120K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2N6098 2N6099 2N6100 2N6101  
DESCRIPTION  
·With TO-220 package  
·High current capability  
APPLICATIONS  
·For use in general-purpose amplifier  
and switching applications  
PINNING  
PIN  
1
DESCRIPTION  
Base  
Collector;connected to  
mounting base  
2
3
Emitter  
Absolute maximum ratings(Ta=25)  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
7
UNIT  
2N6098  
2N6099  
2N6100  
2N6101  
2N6098  
2N6099  
2N6100  
2N6101  
70  
VCBO  
Collector-base voltage  
Open emitter  
Open base  
V
80  
80  
70  
70  
VCEO  
Collector-emitter voltage  
V
80  
80  
VEBO  
IC  
Emitter-base voltage  
Collector current  
Open collector  
8
V
A
10  
PT  
Total power dissipation  
Junction temperature  
Storage temperature  
TC=25  
75  
W
Tj  
150  
-65~150  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
Thermal resistance from junction to case  
MAX  
UNIT  
Rth j-c  
1.67  
/W  
Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2N6098 2N6099 2N6100 2N6101  
CHARACTERISTICS  
Tj=25unless otherwise specified  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN  
70  
TYP.  
MAX  
UNIT  
2N6098  
2N6099  
2N6100  
2N6101  
70  
Collector-emitter  
sustaining voltage  
VCEO(SUS)  
IC=0.1A ;IB=0  
V
80  
80  
VCEsat-1  
Collector-emitter saturation voltage  
Collector-emitter saturation voltage  
IC=5A;IB=0.5A  
IC=10A;IB=2.5A  
1.3  
3.5  
V
V
VCEsat-2  
2N6098/6099 IC=4A ; VCE=4V  
2N6100/6101 IC=5A ; VCE=4V  
VBE  
Base-emitter on voltage  
1.3  
V
VCB=Rated VCBO;IE=0  
TC=150℃  
0.5  
2.0  
ICBO  
ollector cut-off current  
Emitter cut-off current  
mA  
mA  
IEBO  
VEB=8V; IC=0  
1.0  
2N6098/6099 IC=4A ; VCE=4V  
2N6100/6101 IC=5A ; VCE=4V  
IC=1A ; VCE=10V  
hFE  
DC current gain  
20  
80  
fT  
Transition frequency  
0.8  
MHz  
2
Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2N6098 2N6099 2N6100 2N6101  
PACKAGE OUTLINE  
Fig.2 utline dimensions(unindicated tolerance:±0.10 mm)  
3

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