RT1P44QC [ISAHAYA]
Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type; 晶体管,电阻器,用于切换应用NPN硅外延型型号: | RT1P44QC |
厂家: | ISAHAYA ELECTRONICS CORPORATION |
描述: | Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type |
文件: | 总3页 (文件大小:69K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
〈Transistor〉
RT1P44QX SERIES
Transistor With Resistor
For Switching Application
Silicon PNP Epitaxial Type
DESCRIPTION
OUTLINE DRAWING ꢀꢀꢀꢀꢀꢀꢀUNIT:mm
RT1P44QX is a one chip transistor
RT1P44QU
RT1P44QC
with built-in bias resistor,NPN type is RT1N44QX.
1.6
0.8
2.5
0.4
0.4
0.5
1.5
0.5
FEATURE
・Built-inbiasresistor(R1=47kΩ,R2=10kΩ).
①
②
①
②
③
③
APPLICATION
Inverted circuit,switching circuit,interface circuit,
driver circuit.
Equivalent circuit
C
JEITA:-
JEDEC:-
JEITA:SC-59
JEDEC:SimilartoTO-236
(OUT)
R1
B
Terminal Connector
①:Base
Terminal Connector
①:Base
(IN)
R2
②:Emitter
③:Collector
②:Emitter
③:Collector
E
(GND)
RT1P44QM
RT1P44QS
4.0
2.1
0.425 1.25 0.425
0.1
①
0.45
②
③
1.27 1.27
①
②
③
JEITA:SC-70
JEDEC:-
JEITA:-
JEDEC:-
Terminal Connector
①:Base
②:Emitter
Terminal Connector
①:Emitter
②:Collector
③:Base
③:Collector
ISAHAYAꢀELECTRONICSꢀCORPORATION
〈Transistor〉
RT1P44QX SERIES
Transistor With Resistor
For Switching Application
Silicon PNP Epitaxial Type
MAXIMUM RATING (Ta=25℃)
RATING
SYMBOL
PARAMETER
UNIT
RT1P44QU
RT1P44QM
RT1P44QC
RT1P44QS
V
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
-50
-15
-50
V
V
CBO
V
EBO
V
V
CEO
I
-100
-200
200
mA
mA
ꢀC
I
Peak Collector current
Collector dissipation(Ta=25℃)
Junction temperature
ꢀCM
P
150
+150
450
mW
C
Tj
+150
℃
℃
Tstg
Storage temperature
-55~+150
-55~+150
ELECTRICAL CHARACTERISTICS (Ta=25℃)
LIMIT
TYP
SYMBOL
PARAMETER
TEST CONDITION
UNIT
MIN
MAX
-0.1
V
C to E break down voltage
Collector cut off current
DC forward current gain
C to E saturation voltage
Input on voltage
I =-100μA,RBE=∞
ꢀC
-50
V
μA
-
V
(BR)CEO
I
VCB=-50V,I =0
ꢀE
ꢀCBO
h
VCE=-5V,I =-5mA
ꢀC
33
FE
V
I =-10mA,I =-0.5mA
ꢀB
-0.3
-8.9
CE(sat)
ꢀC
V
VCE=-0.2V,I =-5mA
ꢀC
-4.2
-3.1
47
V
I(ON)
V
Input off voltage
VCE=-5V,I =-100μA
ꢀC
-2.3
33
V
I(OFF)
R
Input resistance
61
kΩ
1
R/R
2
Resistance ratio
0.17
0.21
150
0.26
1
f
T
Gain band width product
VCE=-6V,I =10mA
ꢀE
MHz
TYPICAL CHARACTERISTICS
INPUT O N VO LTAG E
VS.C O LLEC TO R C URRENT
D C FO RW ARD C U RREN T G AIN
VS.C O LLEC TO R C URRENT
-10
1000
100
10
VCE=-0.2V
VCE=-5V
-1
-0.1
-1
-10
-100
-1
-10
-100
COLLECTOR CURRENTꢀI (mA)
C
COLLECTOR CURRENTꢀI(mA)
C
C O LLEC TO R C URRENT
VS.INPUT O FF VO LTAG E
-1000
VCE=-5V
-100
-10
0
-0.8
-1.6
-2.4
-3.2
(V)
-4
INPUT OFF VOLTAGEꢀV
I(OFF)
ISAHAYAꢀELECTRONICSꢀCORPORATION
Marketing division, Marketing planning department
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
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there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or
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such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or
mishap.
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materials or the products contained therein.
Jan.2003
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