2SC5807R [ISAHAYA]

Transistor;


型号：	2SC5807R
厂家：	ISAHAYA ELECTRONICS CORPORATION
描述：	Transistor
文件：	总5页 (文件大小：79K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

〈Transistor〉

DEVELOPING

2SC 5807

For Low Frequency Amplify Application

Silicon NPN Epitaxial Type

DESCRIPTION

OUTLINE DRAWING

Unit

：ｍｍ

2SC5807 isasiliconNPN epitaxial Transistor.

It designed with high collector current and high collector dissipation.

4.6 MAX

1.6

1.5

FEATURE

●High collector current IC=5A

●Small collector to Emitter saturation voltage

ꢀꢀVCE(sat)=0.25V TYP. (@IC=4A,IB=100mA)

●High collector dissipation PC=500mW

0.53

MAX

0.4

0.48 MAX

1.5

APPLICATION

3.0

For storobe ,DC/DC convertor,power amplify apprication

MARKING

TERMINAL CONNECTER

Ｅ: EMITTER

Ｃ:COLLECTOR

Ｂ:BASE

EIAJ : SC-62

JEDEC :

Note)

The dimension without tolerance represent central value.

MARKING

TYPE NAME

ＡＫ

Ｑ

LOT No.

ｈ_ＦＥITEM

MAXIMUM RATINGS (Ta=25℃)

SYMBOL

V_CBO

V_EBO

PARAMETER

Collector to Base voltage

Emitter to Base voltage

RATINGS

UNIT

V_CEO

I _C

Collector to Emitter voltage

Collector current

I _CM

Peak Collecter currentꢀ*1

Collector dissipation (Total、Ta=25℃)

Collector dissipation (Total、Ta=25℃)ꢀ*2

Junction temperature

0.5

P_C

T_j

＋150

-55～＋150

℃

T_stg

Storage temperature

*1ꢀSinglePulseꢀPw=10msec

*2ꢀPakkage mounted on 35mm×50mm×0.8mm ceramic board.

ISAHAYA

ꢀELECTRONICS ꢀCORPORATION

〈Transistor〉

DEVELOPING

2SC 5807

Forstrobe,DC/DC convertor Application

Silicon NPN Epitaxial Type

ELECTRICAL CHARACTERISTICS (Ta=25℃)

LIMITS

SYMBOL

PARAMETER

TESTCONDITIONS

I _C=50μA，I _E=0mA

UNIT

MIN

TYP

MAX

V_(BR)CBO

V_(BR)EBO

V_(BR)CEO

C to B break down voltage

E to B break down voltage

C to E break down voltage

Collector cut off current

Emitter cut off current

I _E=50μA，I _C=0mA

I _C=1mA，R_BE=∞

CBO

V_CB=40V，I_E=0mA

V_EB=5V，IC=0mA

0.5

μA

IEBO

ｈＦＥ

VCE(sat)

DC forward current gain

C to E saturation voltage

Gain band width product

Collector output capacitance

VCE=2V，IC=0.5A

120

390

1.0

IC=4A，I _B=100mA

VCE=6V，IE=-50mA

VCB=20V，IE=0mA，f=1MHz

0.25

150

MHz

Cob

*ꢀMeasured using pulse current.

Marking

Ｑ

Ｒ

*ꢀItshows ｈ classification in right table.

ＦＥ

ｈ

ＦＥ

120 to 270

180 to 390

TYPICAL CHARACTERISTICS

COMMON EMITTER TRANSFER

COMMON EMITTER OUTPUT

20mA

VCE=2V

Ta=25℃

15mA

25mA

10mA

Ta=100℃

25℃

0.1

30mA

-25℃

35mA

5mA

0.01

40～50mA

Pc=2W

IB=0mA

0.001

0.2

0.4

0.6

0.8

1.2

1.4

1.6

0.4

0.8

1.2

1.6

BASE TO EMITTER VOLTAGEꢀＶ（Ｖ）

COLLECTER TO EMITTER VOLTAGEꢀＶ（Ｖ）

ＣＥ

ＢＥ

DC FORWARD CURRENT GAIN

VS. COLLECTER CURRENT(Ⅰ)

DC FORWARD CURRENT GAIN

VS. COLLECTER CURRENT(Ⅱ)

10,000

1,000

100

10,000

1,000

100

Ta=25℃

VCE=1V

Ta=100℃

VCE=5V

25℃

-25℃

0.001

0.01

0.1

0.001

0.01

0.1

COLLECTER CURRENTꢀＩ（Ａ）

Ｃ

COLLECTER CURRENTꢀＩ（Ａ）

Ｃ

ISAHAYA

ꢀELECTRONICS ꢀCORPORATION

〈Transistor〉

DEVELOPING

2SC 5807

Forstrobe,DC/DC convertor Application

Silicon NPN Epitaxial Type

COLLECTER TO EMITTER SATURATION

VOLTAGE VS. COLLECTER CURRENT(Ⅰ)

DC FORWARD CURRENT GAIN

VS. COLLECTER CURRENT(Ⅲ)

0.1

10,000

1,000

100

Ta=25℃

VCE=2V

Ta=100℃

IC/IB=50

25℃

-25℃

0.01

0.001

0.01

0.1

0.001

0.01

0.1

COLLECTER CURRENTꢀＩ_Ｃ（Ａ）

COLLECTER TO EMITTER SATURATION

VOLTAGE VS. COLLECTER CURRENT(Ⅱ)

COLLECTER TO EMITTER SATURATION

VOLTAGE VS. COLLECTER CURRENT(Ⅲ)

0.1

IC/IB=10

IC/IB=30

Ta=100℃

0.01

25℃

-25℃

25℃

-25℃

0.001

0.01

0.1

0.001

0.01

0.1

COLLECTER CURRENTꢀＩ_Ｃ（Ａ）

COLLECTER TO EMITTER SATURATION

VOLTAGE VS. COLLECTER CURRENT(Ⅳ)

COLLECTER TO EMITTER SATURATION

VOLTAGE VS. COLLECTER CURRENT(Ⅴ)

0.1

IC/IB=40

IC/IB=50

Ta=100℃

0.01

25℃

-25℃

0.001

0.01

0.1

0.001

0.01

0.1

COLLECTER CURRENTꢀＩ_Ｃ（Ａ）

COLLECTER CURRENTꢀＩ（Ａ）

Ｃ

ISAHAYA

ꢀELECTRONICS ꢀCORPORATION

〈Transistor〉

DEVELOPING

2SC 5807

Forstrobe,DC/DC convertor Application

Silicon NPN Epitaxial Type

AREA OF SAFETY OPERATION

100

Ta=25℃

Single Pulse

Mounted on recommended

mount pad

ICMAX(p

Pw=1msec

ICMAX(pulse)

Pw=10msec

Pw=100mse

Pw=1sec

0.1

0.01

0.1

100

1000

COLLECTER TO EMITTER VOLTAGEꢀＶ（Ｖ）

ＣＥ

ISAHAYA

ꢀELECTRONICS ꢀCORPORATION

Marketing division, Marketing planning department

6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan

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mishap.

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Jan.2003

2SC5807R [ISAHAYA]

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