2SA1530A

更新时间:2024-09-18 06:34:23
品牌:ISAHAYA
描述:FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE(Ultra super mini type)

2SA1530A 概述

FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE(Ultra super mini type) 低频AMPLIFY申请PNP硅外延型(超超级迷你型) 其他晶体管

2SA1530A 规格参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.59
Base Number Matches:1

2SA1530A 数据手册

通过下载2SA1530A数据手册来全面了解它。这个PDF文档包含了所有必要的细节,如产品概述、功能特性、引脚定义、引脚排列图等信息。

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〈SMALL-SIGNAL TRANSISTOR〉  
2SA1530A  
FOR LOW FREQUENCY AMPLIFY APPLICATION  
SILICON PNP EPITAXIAL TYPE(Ultra super mini type)  
DESCRIPTION  
OUTLINE DRAWING  
Unit:mm  
2SA1530A is a super mini package resin sealed  
silicon PNP epitaxial transistor,  
It is designed for low frequency voltage application.  
.
FEATURE  
●Small collector to emitter saturation voltage.  
VCE(sat)=-0.3Vmax(@Ic=-100mA、IB=-10mA)  
●Excellent linearity of DC forward gain.  
●Super mini package for easy mounting  
APPLICATION  
For Hybrid IC,small type machine low frequency voltage  
Amplify application.  
JEITA:SC-59  
TERMINAL CONNECTER  
①:BASE  
MAXIMUM RATINGS(Ta=25℃)  
Symbol  
VCBO  
VCEO  
VEBO  
I O  
Parameter  
Ratings  
-60  
Unit  
V
②:EMITTER  
Collector to Base voltage  
Collector to Emitter voltage  
Emitter to Base voltage  
Collector current  
③:COLLECTOR  
-50  
V
-6  
V
-150  
mA  
mW  
Pc  
Collector dissipation  
Junction temperature  
Storage temperature  
200  
Tj  
+150  
-55~+150  
Tstg  
ELECTRICAL CHARACTERISTICS(Ta=25℃)  
Limits  
Parameter  
Symbol  
Test conditions  
Unit  
Min  
-50  
-
Typ  
-
Max  
-
C to E break down voltage  
Collector cut off current  
Emitter cut off current  
DC forward current gain  
DC forward current gain  
C to E Saturation Vlotage  
Gain bandwidth product  
Collector output capacitance  
Noise figure  
V(BR)CEO  
ICBO  
IEBO  
IC= -100μA , RBE= ∞  
V CB= -60V , I E= 0mA  
V EB= -4V , I C= 0mA  
V
μA  
μA  
-
-
-0.1  
-0.1  
560  
-
-
-
hFE  
V
V
CE = -6V , IC= -1mA  
CE = -6V , IC= -0.1mA  
120  
70  
-
-
hFE  
-
-
VCE(sat) I C= -100mA , I B= -10mA  
-
-0.3  
-
V
fT  
Cob  
NF  
V
CE= -6V , I E= 10mA  
V CB= -6V , I E= 0mA,f=1MHz  
V CE= -6V , I E= 0.3mA,f=100Hz,RG=10kΩ  
-
200  
4
MHz  
pF  
dB  
-
-
-
-
20  
※) It shows hFE classification in below table.  
Item  
Q
R
S
120~270  
180~390  
270~560  
hFE Item  
ISAHAYA ELECTRONICS CORPORATION  
〈SMALL-SIGNAL TRANSISTOR〉  
2SA1530A  
FOR LOW FREQUENCY AMPLIFY APPLICATION  
SILICON PNP EPITAXIAL TYPE(Ultra super mini type)  
COLLECTOR DISSIPATION VS.AMBIENT TEMPERTURE  
250  
200  
150  
100  
50  
0
0
25  
50  
75  
100  
125  
150  
AMBIENTTEMPERTURE Ta (℃)  
ISAHAYA ELECTRONICS CORPORATION  
〈SMALL-SIGNAL TRANSISTOR〉  
2SA1530A  
FOR LOW FREQUENCY AMPLIFY APPLICATION  
SILICON PNP EPITAXIAL TYPE(Super mini type)  
ISAHAYA ELECTRONICS CORPORATION  
Marketing division, Marketing planning department  
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan  
Keep·IsSaAfHetAyYfAirEstleicntryonoiucsr cCiorrcpuoirtadtioensipguntss!the maximum effort into making semiconductor products better and more reliable, but  
there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or  
property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures  
such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or  
mishap.  
Notes regarding these materials  
·These materials are intended as a reference to our customers in the selection of the ISAHAYA products best suited to the  
customer’s application; they don't convey any license under any intellectual property rights, or any other rights, belonging  
·IISSAAHHAAYYAA oErlethcitrrdonpiacrstyC. orporation assumes no responsibility for any damage, or infringement of any third party's rights ,  
·Aorlilgiinnfaotrimngatinionthecounsteainoef daniny pthroesdeucmt daatetari,adlsi,aginrcalmudsi,ncghparrotsdourctcidrcautait,adpiapglicraamtiosnaenxdamchpalertss,croenptareinseedntinintfhoermseatmioanteornialpsr.oducts  
at the time of publication of these materials, and are subject to change by ISAHAYA Electronics Corporation without notice  
due to product improvements or other reasons. It is therefore recommended that customers contact ISAHAYA Electronics  
Corporation or an authorized ISAHAYA products distributor for the latest product information before purchasing product listed  
·hISeAreHinA.YA Electronics Corporation products are not designed or manufactured for use in a device or system that is used  
under circumstances in which human life is potentially at stake. Please contact ISAHAYA electronics corporation or an  
authorized ISAHAYA products distributor when considering the use of a product contained herein for any specific purposes ,  
·TsuhcehparisorawppriattreantuaspoprrosvyaslteofmIsSAfoHrAtrYaAnsEploercttartoionnic,sveChoircpuolarar,timonedisicnael,caeesrsoasrpyatcoer,enpuricnlteaorr,roerpurondduecrseeian rwehpoelaeteorruinsep.art these  
·Imf athteersiaelsp.roducts or technologies are subject to the Japanese export control restrictions, they must be exported under a  
license from the Japanese government and cannot be imported into a country other than the approved destination. Any  
diversion or re-export contrary to the export control laws and regulations of Japan and/or the country of destination is  
·Pprleoahsibeitecdo.ntact ISAHAYA Electronics Corporation or authorized ISAHAYA products distributor for further details on these  
materials or the products contained therein.  
Jan.2003  

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