T50RIA [INFINEON]
MEDIUM POWER PHASE CONTROL THYRISTORS; 中功率相位控制晶闸管
| 型号： | T50RIA |
| 厂家： | 
Infineon |
| 描述： | MEDIUM POWER PHASE CONTROL THYRISTORS |
| 文件： | 总11页 (文件大小：221K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin I27105 rev. B 02/02
T..RIA SERIES
Power Modules
MEDIUM POWER PHASE CONTROL THYRISTORS
Features
Electrically isolated base plate
Types up to 1200 V
RRM
50 A
70 A
90 A
3500 V
isolating voltage
RMS
Simplified mechanical designs,
rapid assembly
High surge capability
Large creepage distances
UL E78996 approved
Description
These series of T-modules are inteded for general
purpose applications such as battery chargers,
welders and plating equipment, regulated power
supplies and temperature and speed control circuits.
The semiconductors are electrically isolated from the
metal base, allowing common heatsinks and compact
assemblies to be built.
Major Ratings and Characteristics
Parameters T50RIA T70RIA T90RIA Units
I
50
70
70
70
90
70
A
T(AV)
@T
oC
C
I
I
80
110
1660
141
1780
A
A
T(RMS)
@50Hz
@60Hz
@50Hz
@60Hz
1310
1370
8550
7800
85500
TSM
1740
1870
A
I2t
13860
15900
14500
159100
A2s
A2s
12650
2
2
I √t
138500
100 to 1200
-40 to125
A √s
V
T
/V
V
DRM RRM
oC
J
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1
T..RIA Series
Bulletin I27105 rev. B 02/02
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Type number
Voltage VDRM/VRRM, maximum repetitive VRSM, maximum non-repetitive IDRM/IRRM max.
Code
peak reverse voltage
peak reverse voltage
@ 25°C
V
V
µA
10
20
100
200
400
600
800
1000
1200
150
300
500
700
900
1100
1300
T50RIA
T70RIA
T90RIA
40
60
80
100
120
100
On-state Conduction
Parameter
T50RIA
50
T70RIA
70
T90RIA Units Conditions
IT(AV) Max. average on-state current
90
A
180° conduction, half sine wave
@ Case temperature
70
80
70
70
°C
A
IT(RMS) Max. RMS on-state current
110
141
ITSM Maximum peak, one-cycle
on-state, non-repetitive
surge current
1310
1370
1660
1740
1780
1870
A
t = 10ms No voltage
t = 8.3ms reapplied
1100
1150
8550
7800
6050
1400
1460
1500
1570
t = 10ms 100% VRRM
t = 8.3ms reapplied
Sine half wave,
I2t
Maximum I2t for fusing
13860
12650
9800
15900
14500
11250
A2s t = 10ms No voltage Initial TJ = TJ max.
t = 8.3ms reapplied
t = 10ms 100% VRRM
5520
85500
0.97
8950
138500
0.77
10270
159100
0.78
t = 8.3ms reapplied
A2√s t = 0.1 to 10ms, no voltage reapplied
I2√t
Maximum I2√t for fusing
VT
(TO)1
Low level value of threshold
voltage
V
(16.7% x π x IT(AV) < I < π x IT(AV)), @ TJ max.
VT
High level value of threshold
voltage
Low level value on-state
slope resistance
High level value on-state
slope resistance
1.13
4.1
0.88
3.6
0.88
2.9
(I > π x IT(AV)), @ TJ max.
(TO)2
r
mΩ (16.7% x π x IT(AV) < I < π x IT(AV)), @ TJ max.
(I > π x IT(AV)), @ TJ max.
t1
r
3.3
3.2
2.6
t2
VTM Maximum on-state voltage drop
1.60
1.55
1.55
V
ITM = π x IT(AV), TJ = 25°C., tp = 400µs square
2
Av. power = VT(TO) x IT(AV) + rf x (IT(RMS)
)
IH
IL
Maximum holding current
Maximum latching current
200
400
mA Anode supply = 6V initial IT = 30A, TJ = 25°C
mA Anode supply = 6V resistive load = 10Ω
gate pulse: 10V, 100µs, TJ = 25°C
Switching
Parameter
T50RIA
T70RIA
0.9
T90RIA Units Conditions
tgd
Typical turn-on time
µs
TJ = 25oC Vd = 50% VDRM, ITM = 50 A
Ig = 500mA, tr <= 0.5, tp >= 6µs
trr
tq
Typical reverse recovery time
Typical turn-off time
3.0
µs
µs
TJ=125°C, ITM = 50A tp = 300µs di/dt =10A/µs
TJ= TJ max., ITM = 50A, tp = 300µs,
110
-di/dt = 15A/µs, Vr = 100V; linear to 80%VDRM
2
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T..RIA Series
Bulletin I27105 rev. B 02/02
Blocking
Parameter
T50RIA
T70RIA
15
T90RIA Units Conditions
mA TJ = TJ = TJ max.
IRRM Maximum peak reverse and
IDRM off-state leakage current
VINS RMS isolation voltage
3500
500
V
50Hz, circuit to base, all terminals shorted,
J = 25°C, t = 1s
V/µs TJ = TJ max., linear to 80% rated VDRM (1)
T
dv/dt Critical rate of rise of off-state
voltage
(1) Available with dv/dt = 1000V/µs, to complete code add S90 i.e. T90RIA80S90
Triggering
Parameter
T50RIA
T70RIA
T90RIA Units Conditions
PGM Max. peak gate power
10
2.5
2.5
10
12
3.0
3.0
10
12
3.0
3.0
10
W
W
A
tp≤5ms, TJ =TJ max.
f=50Hz,TJ =TJ max.
tp≤5ms, TJ =TJ max.
PG(AV) Max. average gate power
IGM
Max. peak gate current
-VGT Max.peak negative
gate voltage
V
VGT
Max. requiredDCgate
voltage to trigger
4.0
2.5
1.5
250
100
50
4.0
2.5
1.5
270
120
60
4.0
2.5
1.5
270
120
60
V
TJ =-40°C
TJ =25°C
TJ =TJmax.
TJ =-40°C
Anodesupply=6V,resistive
load;Ra=1Ω
IGT
Max. requiredDCgate
current to trigger
Anodesupply=6V,resistive
load;Ra=1Ω
mA TJ =25°C
TJ =TJmax.
VGD Max. gate voltage
that will not trigger
0.2
0.2
0.2
V
@TJ =TJ max., ratedVDRMapplied
IGD
Max. gate current
5.0
6.0
6.0
mA
that will not trigger
di/dt Max. rateofriseof
turned-on current
200
180
A/µs VD=0.67ratedVDRM,ITM=2xrateddi/dt
Ig=400mAforT50RIAandIg=500mAfor
160
150
T70RIA&T90RIA;tr<0.5µs,tp>=6µs
For repetitive value use 40% non-repetitive
PerJEDECstd. RS397,5.2.2.6
Thermal and Mechanical Specifications
Parameter
T50RIA
T70RIA
T90RIA Units Conditions
°C
TJ
Max. junction operating
temperature range
Max. storage temperature
range
-40 to 125
Tstg
-40 to 150
0.50
°C
RthJC Max. thermal resistance,
junction to case
RthCS Max. thermal resistance,
case to heatsink
0.65
0.38
K/W DC operation, per junction
K/W Mounting surface smooth, flat and greased
0.2
T
Mounting
torque ± 10%
Approximate weight
Case style
to heatsink
terminals
1.3 ± 10%
3 ± 10%
54
Nm M3.5 mounting screws (2)
non lubricated
threads
M5 screw terminals
wt
g
See outline table
T type
D-56
(2) A mounting compound is recommended and thetorque should be rechecked after a period of 3 hoursto allow for the
spread of the compound.
3
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T..RIA Series
Bulletin I27105 rev. B 02/02
∆R Conduction (per Junction)
(The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC)
Sinusoidal conduction @ TJ max.
Rectangular conduction @ TJ max.
Devices
Units
K/W
180o
0.08
0.07
0.05
120o
0.10
0.08
0.06
90o
60o
30o
180o
0.06
0.05
0.04
120o
0.10
0.08
0.06
90o
60o
30o
T50RIA
T70RIA
T90RIA
0.13
0.10
0.08
0.19
0.14
0.12
0.31
0.24
0.20
0.14
0.11
0.09
0.20
0.15
0.12
0.32
0.24
0.20
Ordering Information Table
Circuit configuration **
Device Code
T
50 RIA 120
G
2
1
3
4
1
2
3
4
-
-
-
-
Module type
Current rating
Circuit configuration **
Voltage code : code x 10 = V
RRM
Outline Table
+
-
All dimensions in millimeters (inches)
4
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T..RIA Series
Bulletin I27105 rev. B 02/02
130
120
110
100
90
130
120
110
100
90
T 50R IA.. S eries
T 50R IA.. S eries
(DC) = 0.65 K/W
R
(DC) = 0.65 K/W
R
thJC
thJC
Conduction Angle
Conduction P eriod
80
80
30
70
70
90
60
90
60
30
120
60
120
40
60
30
180
DC
70
180
50
50
50
0
10
20
40
50 60
80
0
10
20
30
60
Average On-state Current (A)
Average On-s tate Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
80
180
120
90
60
30
t
h
S
A
70
60
50
40
30
20
10
0
R MS Limit
Conduction Angle
T 50R IA.. S eries
5
K
/
W
T
= 125 C
J
0
10
Average On-s tate Current (A)
Fig. 3 - On-state Power Loss Characteristics
20
30
40
50
20
40
60
80
100
120
Maximum Allowable Ambient T emperature ( C)
110
100
90
80
70
60
50
40
30
20
10
0
R
DC
180
120
90
60
30
=
0
.
0.
5
K
1
/
W
K
0
/
W
.
7
K
-
/
W
D
el
t
a
R
R MS Limit
2
K
/
W
3
K
/
W
Conduction P eriod
T 50R IA.. S eries
T
= 125 C
J
0
10
20 30
Average On-s tate Current (A)
Fig. 4 - On-state Power Loss Characteristics
40
50
60
70
80
20
40
60
80
100
120
Maximum Allowable Ambient T emperature ( C)
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5
T..RIA Series
Bulletin I27105 rev. B 02/02
1200
1300
1200
1100
1000
900
At Any R ated L oad Condition And With
Maximum Non R epetitive S urge Current
Vers us Pulse T rain Duration. Control
Of Conduction May Not B e Maintained.
R ated V
Applied F ollowing S urge.
R R M
Initial T = 125 C
1100
1000
900
J
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
Initial T = 125 C
J
No Voltage R eapplied
R ated V
R eapplied
R RM
800
800
700
700
600
T 50R IA.. S eries
T 50RIA.. S eries
600
500
500
0.01
1
10
100
0.1
Pulse T rain Duration (s)
1
Number Of E qual Amplitude H alf Cycle Current P uls es (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
1000
100
10
T
T
= 25 C
J
J
= 125 C
T 50R IA.. S eries
1
0.5
1
1.5
Ins tantaneous On-s tate Voltage (V)
Fig. 10 - On-state Voltage Drop Characteristics
2
2.5
3
3.5
4
4.5
100
10
1
R ectangular gate puls e
a) R ecommended load line for
rated di/dt : 20V, 30ohms ;
(1) PGM = 10W, tp = 5ms
(2) PGM = 20W, tp = 2ms
(3) PGM = 50W, tp = 1ms
(4) PGM = 100W, tp = 500
tr=0.5 s, tp>=6
s
s
b) R ecommended load line for
<=30% rated di/dt : 20V, 65ohms
tr=1 s , tp>=6
s
(a)
(b)
(4)
(1) (2)
(3)
VGD
IGD
T 50R IA.. S eries
1
F requency L imited by PG(AV)
10 100
0.1
0.001
0.01
0.1
1000
Ins tantaneous Gate Current (A)
Fig. 9 - Gate Characteristics
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6
T..RIA Series
Bulletin I27105 rev. B 02/02
130
120
110
100
90
130
120
110
100
90
T 70R IA.. S eries
T 70R IA.. S eries
(DC) = 0.50 K/W
R
(DC) = 0.50 K/W
R
thJC
thJC
Conduction Angle
Conduction Period
80
80
60
40
30
70
70
60
30
90
90
120
120
60
60
60
180
180
80
DC
50
50
0
20
100
120
0
10
20
30
40
50
60 70
80
Average On-s tate Current (A)
Fig. 13 - Current Ratings Characteristics
Average On-s tate Current (A)
Fig. 12 - Current Ratings Characteristics
100
180
90
80
70
60
50
40
30
20
10
0
120
90
60
0
.
7
K
/
W
30
R MS L imit
Conduction Angle
T 70R IA.. S eries
T
= 125 C
J
0
10
20
30
40
50
60
70
Maximum Allowable Ambient T emperature ( C)
Fig. 18 - On-state Power Loss Characteristics
20
40
60
80
100
120
Average On-s tate Current (A)
140
120
100
80
DC
180
120
90
60
30
R
0
.
=
3
K
/
0
.
/
W
1
K
0
/
.
5
W
K
-
W
D
e
l
t
a
R
1
K
/
W
R MS Limit
60
1
.
5
K
K
/
W
2
Conduction P eriod
T 70R IA.. S eries
/
W
40
3
5
K
K
/
W
20
T
= 125 C
/W
J
0
0
20
Average On-s tate Current (A)
Fig. 15 - On-state Power Loss Characteristics
40
60
80
100
120
20
40
60
80
100
120
Maximum Allowable Ambient T emperature ( C)
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7
T..RIA Series
Bulletin I27105 rev. B 02/02
1500
1700
1600
1500
1400
1300
1200
1100
1000
900
At Any R ated L oad Condition And With
Maximum Non R epetitive S urge Current
Vers us Pulse T rain Duration. Control
Of Conduction May Not B e Maintained.
R ated V
Applied F ollowing S urge.
R R M
1400
1300
1200
1100
1000
900
Initial T = 125 C
J
Initial T = 125 C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
No Voltage R eapplied
R ated V
R eapplied
R R M
800
T 70R IA.. S eries
T 70R IA.. S eries
800
700
700
600
0.01
1
10
100
0.1
Puls e T rain Duration (s)
1
Number Of E qual Amplitude H alf Cycle Current P uls es (N)
Fig. 16 - Maximum Non-Repetitive Surge Current
Fig. 17 - Maximum Non-Repetitive Surge Current
1000
100
10
T
T
= 25 C
J
J
= 125 C
T 70R IA.. S eries
1
0
0.5
Ins tantaneous On-s tate Voltage (V)
Fig. 10 - On-state Voltage Drop Characteristics
1
1.5
2
2.5
3
3.5
4
100
10
1
R ectangular gate puls e
a) R ecommended load line for
rated di/dt : 20V, 20ohms;
(1) PGM = 12W, tp = 5ms
(2) PGM = 30W, tp = 2ms
(3) PGM = 60W, tp = 1ms
(4) PGM = 200W, tp = 300
tr=0.5 s , tp>=6
s
s
b) R ecommended load line for
<=30% rated di/dt : 15V, 40ohms
tr=1 s , tp>=6
s
(a)
(b)
(1) (2)
(3)
(4)
VGD
IGD
T 70R IA.., T 90R IA.. S eries F requency Limited by PG(AV)
0.1 10 100
0.1
0.001
0.01
1
1000
Ins tantaneous Gate Current (A)
Fig. 19 - Gate Characteristics
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8
T..RIA Series
Bulletin I27105 rev. B 02/02
130
120
110
100
90
130
120
110
100
90
T 90R IA.. S eries
(DC) = 0.38 K/W
T 90R IA.. S eries
R
R
(DC) = 0.38 K/W
thJC
thJC
Conduction Angle
Conduction Period
80
80
30
70
70
90
60
90
120
180
60
120
60
60
30
180
DC
50
50
0
20
40
Average On-s tate Current (A)
Fig. 24 - Current Ratings Characteristics
60
80 100 120 140 160
0
20
40
60
80
100
Average On-s tate Current (A)
Fig. 23 - Current Ratings Characteristics
140
180
R
0
.
120
90
60
3
K
120
=
/
W
0
.
0
.
1
5
K
K
/
W
/
W
100
30
-
D
e
l
t
a
R MS Limit
R
80
60
40
20
0
Conduction Angle
T 90R IA S eries
3
K
/
W
T
= 125 C
J
0
10 20 30 40 50 60 70 80 90
Average On-s tate Current (A)
20
40
60
80
100
120
Maximum Allowable Ambient T emperature ( C)
Fig. 29 - On-state Power Loss Characteristics
180
160
140
120
100
80
DC
180
120
90
60
30
0
.
5
K
/
W
0
.
7
K
/
W
1
2
K
/
W
R MS L imit
60
Conduction Period
T 90R IA.. S eries
40
K
/
W
20
T
= 125 C
J
0
0
20
Average On-s tate Current (A)
Fig. 29 - On-state Power Loss Characteristics
40
60
80 100 120 140 160
20
40
60
80
100
120
Maximum Allowable Ambient T emperature ( C)
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9
T..RIA Series
Bulletin I27105 rev. B 02/02
1600
1800
1700
1600
1500
1400
1300
1200
1100
1000
900
At Any R ated L oad Condition And With
Maximum Non R epetitive S urge Current
Vers us Puls e T rain Duration. Control
Of Conduction May Not B e Maintained.
R ated V
Applied F ollowing S urge.
RR M
1500
1400
1300
1200
1100
1000
900
Initial T = 125 C
J
Initial T = 125 C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
No Voltage R eapplied
R ated V
R eapplied
R RM
T 90R IA.. S eries
T 90R IA.. S eries
800
800
700
700
0.01
1
10
100
0.1
Puls e T rain Duration (s)
1
Number Of E qual Amplitude H alf Cycle Current P uls es (N)
Fig. 27 - Maximum Non-Repetitive Surge Current
Fig. 28 - Maximum Non-Repetitive Surge Current
1000
100
10
T
T
= 25 C
J
J
= 125 C
T 90R IA.. S eries
1
0
0.5
1
1.5
2
2.5
3
3.5
Ins tantaneous On-s tate Voltage (V)
Fig. 21 - On-state Voltage Drop Characteristics
1
S teady S tate Value
R
R
R
= 0.65 K/W
thJC
thJC
thJC
= 0.50 K/W
= 0.38 K/W
T 50R IA.. S eries
T 70R IA.. S eries
(DC Operation)
0.1
T 90R IA.. S eries
0.01
0.001
0.01
0.1
1
10
100
S quare Wave Puls e Duration (s )
Fig. 34 - Thermal Impedance Z thJC Characteristics
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10
T..RIA Series
Bulletin I27105 rev. B 02/02
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 02/02
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11
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