ST203S10PCH0LPBF [INFINEON]
Silicon Controlled Rectifier, 320A I(T)RMS, 205000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element, TO-209AB;型号: | ST203S10PCH0LPBF |
厂家: | Infineon |
描述: | Silicon Controlled Rectifier, 320A I(T)RMS, 205000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element, TO-209AB 栅 栅极 |
文件: | 总9页 (文件大小:121K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Bulletin I25177 rev. C 12/96
ST203S SERIES
Stud Version
INVERTER GRADE THYRISTORS
Features
205A
All diffused design
Center amplifying gate
Guaranteed high dv/dt
Guaranteed high di/dt
High surge current capability
Low thermal impedance
High speed performance
TypicalApplications
Inverters
Choppers
Induction heating
All types of force-commutated converters
Major Ratings and Characteristics
Parameters
IT(AV)
ST203S
205
Units
A
@ TC
85
320
°C
A
IT(RMS)
ITSM
@ 50Hz
@ 60Hz
@ 50Hz
@ 60Hz
5260
A
5510
A
I2t
138
KA2s
KA2s
V
126
V
DRM/VRRM
range
1000 to 1200
20 to 30
- 40 to 125
case style
TO-209AB (TO-93)
t
µs
q
TJ
°C
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1
ST203S Series
Bulletin I25177 rev. C 12/96
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Code
VDRM/VRRM, maximum
VRSM , maximum
IDRM/IRRM max.
@ TJ = TJ max.
mA
Type number
ST203S
repetitive peak voltage
V
non-repetitive peak voltage
V
10
12
1000
1200
1100
1300
40
Current Carrying Capability
ITM
ITM
ITM
Frequency
Units
180oel
100µs
6180
2980
1730
890
50
180oel
50Hz
400Hz
580
570
400
380
900
940
640
650
4680
2150
1000Hz
520
370
50
320
210
50
930
780
50
630
510
50
1200
580
50
A
V
2500Hz
Recovery voltage Vr
Voltage before turn-on Vd
Rise of on-state currentdi/dt
VDRM
VDRM
V DRM
50
60
50
85
-
-
-
-
A/µs
Case temperature
60
85
60
85
°C
Equivalent values for RC circuit
47Ω / 0.22µF
47Ω / 0.22µF
47Ω / 0.22µF
On-state Conduction
Parameter
ST203S
Units Conditions
IT(AV) Max. average on-state current
@ Case temperature
205
85
A
180° conduction, half sine wave
°C
IT(RMS) Max. RMS on-state current
320
DC @ 76°C case temperature
ITSM
Max. peak, one half cycle,
non-repetitive surge current
5260
5510
4420
4630
138
126
98
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
No voltage
A
reapplied
100% VRRM
reapplied
Sinusoidal half wave,
I2t
Maximum I2t for fusing
No voltage Initial TJ = TJ max
reapplied
KA2s
100% VRRM
89
reapplied
I2√t
Maximum I2√t for fusing
1380
KA2√s t = 0.1 to 10ms, no voltage reapplied
2
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ST203S Series
Bulletin I25177 rev. C 12/96
On-state Conduction
Parameter
ST203S
1.72
Units Conditions
VTM
Max. peak on-state voltage
ITM= 600A, TJ = TJ max, t = 10ms sine wave pulse
p
VT(TO)1 Low level value of threshold
1.17
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
V
voltage
VT(TO)2 High level value of threshold
voltage
1.20
0.92
0.87
(I > π x I
), TJ = TJ max.
T(AV)
r
Low level value of forward
slope resistance
t1
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
(I > π x I ), TJ = TJ max.
mΩ
r
High level value of forward
slope resistance
t2
T(AV)
IH
IL
Maximum holding current
Typical latching current
600
TJ = 25°C, IT > 30A
mA
1000
TJ = 25°C, VA= 12V, Ra = 6Ω, IG= 1A
Switching
Parameter
ST203S
1000
Units Conditions
di/dt
Max. non-repetitive rate of rise
of turned-on current
TJ = TJ max, VDRM = rated VDRM
A/µs
ITM = 2 x di/dt
TJ = 25°C, VDM = rated VDRM, ITM = 50A DC, t = 1µs
p
t
Typical delay time
0.79
d
Resistive load, Gate pulse: 10V, 5Ω source
µs
Min Max
TJ = TJ max, ITM = 300A, commutating di/dt = 20A/µs
t
Max. turn-off time
20
30
VR = 50V, t = 500µs, dv/dt: see table in device code
p
q
Blocking
Parameter
ST203S
500
Units Conditions
dv/dt Maximum critical rate of rise of
off-state voltage
TJ = TJ max., linear to 80% VDRM, higher value
V/µs
available on request
IRRM
IDRM
Max. peak reverse and off-state
leakage current
40
mA
TJ = TJ max, rated VDRM/VRRM applied
Triggering
Parameter
Maximum peak gate power
PG(AV) Maximum average gate power
IGM Max. peak positive gate current
ST203S
Units Conditions
PGM
60
10
10
W
A
TJ = TJ max, f = 50Hz, d% = 50
TJ = TJ max, t ≤ 5ms
p
+VGM Maximum peak positive
gate voltage
20
5
V
TJ = TJ max, t ≤ 5ms
p
-VGM Maximum peak negative
gate voltage
IGT
Max. DC gate current required
to trigger
200
3
mA
V
TJ = 25°C, VA = 12V, Ra = 6Ω
VGT
Max. DC gate voltage required
to trigger
IGD
Max. DC gate current not to trigger
20
mA
V
TJ = TJ max, rated VDRM applied
VGD
Max. DC gate voltage not to trigger
0.25
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3
ST203S Series
Bulletin I25177 rev. C 12/96
Thermal and Mechanical Specifications
Parameter
ST203S
-40 to 125
-40 to 150
Units
°C
Conditions
TJ
T
Max. junction operating temperature range
Max. storage temperature range
stg
RthJC Max. thermal resistance, junction to case
RthCS Max. thermal resistance, case to heatsink
0.105
0.04
DC operation
K/W
Mounting surface, smooth, flat and greased
T
Mounting torque, ± 10%
31
Nm
(Ibf-in)
Nm
Non lubricated threads
Lubricated threads
(275)
24.5
(210)
280
(Ibf-in)
g
wt
Approximate weight
Case style
TO-209AB (TO-93)
See Outline Table
∆RthJC Conduction
(The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC)
Conduction angle Sinusoidal conduction Rectangular conduction Units
Conditions
180°
120°
90°
0.016
0.019
0.025
0.036
0.060
0.012
0.020
0.027
0.037
0.060
K/W
TJ = TJ max.
60°
30°
Ordering Information Table
Device Code
ST 20
3
S
12
P
F
J
0
2
3
7
1
4
5
6
8
9
10
1
2
3
4
5
6
-
-
-
-
-
-
Thyristor
Essential part number
3 = Fast turn off
S = Compression bonding Stud
Voltage code: Code x 100 = VRRM (See Voltage Ratings table)
P = Stud base 3/4" 16UNF-2A
M = Stud base metric threads M16/ x 1.5
7
8
9
-
-
-
Reapplied dv/dt code (for t test condition)
q
dv/dt - tq combinations available
t
code
q
dv/dt (V/µs) 20
50
100 200 400
0 = Eyelet terminals (Gate and Aux. Cathode Leads)
1 = Fast-on terminals (Gate and Aux. Cathode Leads)
2 = Flag terminals (For Cathode and Gate Terminals)
Critical dv/dt:
20
25
30
CK
CJ
CH
DK
DJ
DH
EK
EJ
EH
--
FJ *
FH
--
--
HH
t (µs)
q
*Standard part number.
All other types available only on request.
-
10
None = 500V/µsec (Standard value)
L
= 1000V/µsec (Special selection)
4
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ST203S Series
Bulletin I25177 rev. C 12/96
Outline Table
CERAMIC HOUSING
19 (0.75) MAX.
4 (0.16) MAX.
8.5 (0.33) DIA.
4.3 (0.17) DIA.
FLEXIBLE LEAD
2
C.S. 25mm
(0.039 s.i.)
RED SILICON RUBBER
RED CATHODE
Fast-on Terminals
2
C.S. 0.4mm
(0.0006 s.i.)
AMP. 280000-1
REF-250
WHITE GATE
+I
+
220 (8.66) 10 (0.39)
-
RED SHRINK
WHITE SHRINK
27.5 (1.08) MAX. DIA.
SW 32
Case Style TO-209AB (TO-93)
All dimensions in millimeters (inches)
3/4"-16UNF-2A *
35 (1.38) MAX.
* FOR METRIC DEVICE : M16 x 1.5 - LENGHT 21 (0.83) MAX.
CERAMIC HOUSING
FLAG TERMINALS
22 (0.89)
14 (0.55)
DIA. 6.5 (0.25)
1.5 (0.06) DIA.
DIA. 27.5 (1.08) MAX.
SW 32
Case Style TO-209AB (TO-93) Flag
All dimensions in millimeters (inches)
3/4"-16UNF-2A*
*FOR METRIC DEVICE. M16 X 1.5 - LENGHT 21 (0.83) MAX.
3 (0.12)
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5
ST203S Series
Bulletin I25177 rev. C 12/96
130
130
120
110
100
90
ST203S Se rie s
ST203S Se rie s
R
(DC ) = 0.105 K/ W
R
(DC ) = 0.105 K/ W
thJC
thJC
120
110
100
90
Co nd uc tio n Pe rio d
C o nd uc tio n Ang le
30°
60°
90°
30°
120°
60°
80
180°
90°
120°
180°
DC
80
70
0
40
80
120
160
200
240
0
50 100 150 200 250 300 350
Ave ra g e O n-sta te C urre nt (A)
Ave ra g e O n-sta te C urre n t (A)
Fig. 2 - Current Ratings Characteristics
Fig. 1 - Current Ratings Characteristics
350
180°
t
h
S
A
120°
90°
60°
30°
300
250
200
150
100
50
0
.
2
K
/
W
0
.
3
K
/
W
RMS Limit
0
.
4
K
/
W
Co nd uctio n Ang le
0
1
.
8
K
/
W
.2
K
/W
ST203S Se rie s
T = 125°C
J
0
0
40
80
120
160
200
2
4
0
50
75
100
125
Ave ra g e O n-sta te C urre n t (A)
Ma ximum Allo wa b le Am b ie nt Te m p e ra ture (°C )
Fig. 3 - On-state Power Loss Characteristics
500
450
400
350
300
250
200
150
100
50
DC
180°
120°
90°
60°
30°
R
=
0
.
0
8
K
0
0
/
W
.
1
6
-
K
/
D
e
W
l
t
a
.
2
R
K
/
W
0
0
.
3
K
K
/
W
W
RMS Lim it
.
4
/
C o nd uc tio n Pe rio d
0
.
5
K
/
K
/
W
W
0
.
8
ST203S Se rie s
T
= 125°C
J
1
.2
K
/ W
0
0
50 100 150 200 250 300
3
2
5
0
50
75
100
125
Ave ra g e On-sta te C urre nt (A)
Ma xim um Allow a b le Am b ie nt Te m p e ra ture (°C )
Fig. 4 - On-state Power Loss Characteristics
6
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ST203S Series
Bulletin I25177 rev. C 12/96
5000
4500
4000
3500
3000
5500
At An y Ra te d Lo a d Co n d itio n And With
Ma ximum No n Re p e titive Surg e C urre n t
Ve rsus Pulse Tra in Dura tio n. C on tro l
O f Co nd uc tion Ma y Not Be Ma in ta ine d .
Ra te d V
Ap p lie d Fo llo wing Surg e .
RRM
5000
In itia l T = 125°C
J
In itia l T = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
4500
No Volta g e Re a pp lie d
Ra te d V
Re a p p lie d
RRM
4000
3500
3000
2500 ST203S Se rie s
2500 ST203S Se rie s
2000
0.01
2000
1
0.1
Pulse Tra in Dura tion (s)
1
10
100
Numb er O f Eq u a l Amp litud e Ha lf C yc le Cu rre nt Pulse s (N)
Fig. 5 - Maximum Non-repetitive Surge Current
Fig. 6 - Maximum Non-repetitive Surge Current
10000
1
Ste a d y Sta te Va lue
ST203S Se rie s
R
= 0.105 K/ W
thJC
(DC Op e ra tio n)
0.1
1000
0.01
T = 25°C
J
ST203S Se rie s
T = 125°C
J
0.001
100
0.001
0.01
0.1
1
10
1
1.5
2
2.5
3
3.5
4
Sq ua re Wa ve Pulse Dura tion (s)
Insta nta ne o us O n-sta te Volta g e (V)
Fig. 8 - Thermal Impedance ZthJC Characteristic
Fig. 7 - On-state Voltage Drop Characteristics
250
200
150
100
50
160
140
120
100
80
I
= 500 A
TM
I
= 500 A
300 A
200 A
100 A
50 A
TM
ST203S Se rie s
300 A
200 A
T = 125 °C
J
100 A
60
50 A
40
ST203S Se rie s
20
T = 125 °C
J
0
0
0
20
40
60
80
100
0
20
40
60
80
100
Ra te Of Fa ll Of On -sta te C urre nt - d i/ d t (A/ µs)
Ra te O f Fa ll Of O n-sta te C urre nt - d i/d t (A/ µs)
Fig. 10 - Reverse Recovery Current Characteristics
Fig. 9 - Reverse Recovered Charge Characteristics
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7
ST203S Series
Bulletin I25177 rev. C 12/96
1E4
Snub b e r c irc u it
Snub b e r c irc uit
R
C
V
= 47 ohm s
= 0.22 µF
= 80% V
R
C
V
= 47 ohm s
= 0.22 µF
= 80% V
s
s
s
D
s
D
DRM
DRM
400
500
200
100
50 Hz
1000
1500
2500
200
400
100
500
50 Hz
1000
1500
2500
3000
5000
1E3
1E2
3000
5000
ST203S Se rie s
Sinuso id a l p ulse
ST203S Se rie s
Sinuso id a l p ulse
T
= 85°C
T
= 60°C
tp
tp
C
C
1E1
1E4
1E2
1E3
1E4
1E1
1E2
1E3
Pulse Ba se w id th (µs)
Pulse Ba se w id th (µs)
Fig. 11 - Frequency Characteristics
1E4
1E3
1E2
Snub b e r c irc uit
Snub b e r c irc uit
R
C
V
= 47 o hm s
= 0.22 µF
= 80% V
s
s
R
C
V
= 47 ohm s
= 0.22 µF
= 80% V
DRM
s
s
D
DRM
D
50 Hz
100
200
400
200
400
100
50 Hz
500
1000
500
1500
1000
2500
3000
1500
2500
ST203SSe rie s
Tra p e zo id a l p ulse
= 60°C
d i/d t = 50A/µs
ST203S Se rie s
Tra p e zo id a l p u lse
= 85°C
3000
5000
T
C
T
C
5000
d i/d t = 50A/µs
1E1
1E4
1E2
1E3
1E4
1E1
1E2
1E3
Pulse Ba se w id th (µs)
Pulse Ba se width (µs)
Fig. 12 - Frequency Characteristics
1E4
1E3
1E2
Snub b e r c irc uit
Snub b e r c irc uit
ST203S Se rie s
Tra p e zo id a l p ulse
= 85°C
R
C
V
= 47 o hm s
= 0.22 µF
= 80% V
R
C
V
= 47 oh m s
= 0.22 µF
= 80% V
s
s
T
s
s
D
C
tp
D
d i/d t = 100A/µs
DRM
DRM
50 Hz
100
200
400
50 Hz
100
500
200
400
1000
500
1000
1500
1500
2500
3000
ST203S Se rie s
Tra p e zo id a l p ulse
= 60°C
d i/d t = 100A/µs
2500
T
C
3000
tp
1E1
1E4
1E2
1E3
1E4
1E1
1E2
Pulse Ba se wid th (µs)
1E3
Pulse Ba se wid th (µs)
Fig. 13 - Frequency Characteristics
8
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ST203S Series
Bulletin I25177 rev. C 12/96
1E5
1E4
1E3
1E2
1E1
ST203S Se rie s
Re c ta ng ula r p ulse
tp
d i/d t = 50A/µs
20 jo ule s p er p u lse
20 jo ule s p e r p ulse
7.5
4
10
2
5
1
2
0.4
1
0.2
0.5
0.1
0.3
0.2
0.1
ST203S Se rie s
Sinuso id a l p ulse
tp
1E1
1E2
1E3
1E1411E1
1E2
1E3
1E4
Pulse Ba se wid th (µs)
Pulse Ba se w id th (µs)
Fig. 14 - Maximum On-state Energy Power Loss Characteristics
100
10
1
Re c ta ng ula r g a te p ulse
a ) Re c o mme nd e d lo a d lin e for
ra te d d i/ d t : 20V, 10oh ms; tr<=1 µs
b ) Re c om me n d e d loa d line fo r
<=30% ra te d d i/ d t : 10V, 10oh ms
(1) PGM = 10W, tp = 20ms
(2) PGM = 20W, tp = 10ms
(3) PGM = 40W, tp = 5ms
(4) PGM = 60W, tp = 3.3m s
(a )
tr<=1 µs
(b )
(2) (3) (4)
(1)
VGD
IG D
De vic e : ST203S Se rie s
Fre q ue nc y Lim ite d b y PG(AV)
0.1
0.001
0.01
0.1
1
10
100
Insta nta ne ous Ga te Curre n t (A)
Fig. 15 - Gate Characteristics
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9
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