SD303C10S10C [INFINEON]
FAST RECOVERY DIODES Hockey Puk Version; 快恢复二极管曲棍球北辰版本
| 型号： | SD303C10S10C |
| 厂家： | 
Infineon |
| 描述： | FAST RECOVERY DIODES Hockey Puk Version |
| 文件： | 总8页 (文件大小：465K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Bulletin I2066/B
SD303C..C SERIES
Hockey Puk Version
FAST RECOVERY DIODES
Features
High power FAST recovery diode series
1.0 to 2.0 µs recovery time
350A
High voltage ratings up to 2500V
High current capability
Optimized turn on and turn off characteristics
Low forward recovery
Fast and soft reverse recovery
Press-puk encapsulation
Case style conform to JEDEC DO-200AA
Maximum junction temperature 125°C
Typical Applications
Snubber diode for GTO
case style DO-200AA
High voltage free-wheeling diode
Fast recovery rectifier applications
Major Ratings and Characteristics
Parameters
IF(AV)
SD303C..C
Units
350
55
A
°C
A
@ T
hs
IF(RMS)
550
@ T
25
°C
A
hs
IFSM
@ 50Hz
@ 60Hz
@ 50Hz
@ 60Hz
5770
6040
A
I2t
166
KA2s
KA2s
V
152
VRRM range
400 to 2500
1.0 to 2.0
25
t
range
µs
°C
°C
rr
@ TJ
TJ
- 40 to 125
D-655
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SD303C..C Series
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Code
VRRM max. repetitive
VRSM , maximum non-
IRRM max.
Type number
peak and off-state voltage
repetitive peak voltage
TJ = 125°C
mA
V
V
04
08
10
12
14
16
20
25
400
500
SD303C..S10C
800
900
1000
1200
1400
1600
2000
2500
1100
1300
1500
1700
2100
2600
35
SD303C..S15C
SD303C..S20C
12
Forward Conduction
Parameter
SD303C..C Units Conditions
IF(AV) Max. average forward current
@ Heatsink temperature
350(175)
55(75)
A
180° conduction, half sine wave.
Double side (single side) cooled
°C
IF(RMS) Max. RMS current
550
5770
6040
4850
5080
166
A
@ 25°C heatsink temperature double side cooled
t = 10ms No voltage
t = 8.3ms reapplied
t = 10ms 100% VRRM
t = 8.3ms reapplied
t = 10ms No voltage
t = 8.3ms reapplied
t = 10ms 100% VRRM
t = 8.3ms reapplied
IFSM
Max. peak, one-cycle
non-repetitive forward current
A
Sinusoidal half wave,
Initial TJ = TJ max.
I2t
Maximum I2t for fusing
152
KA2s
117
107
1660
1.14
1.63
1.14
0.77
2.26
I2√t
Maximum I2√t for fusing
KA2√s t = 0.1 to 10ms, no voltage reapplied
VF(TO)1 Low level of threshold voltage
VF(TO)2 High level of threshold voltage
(16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max.
V
(I > π x IF(AV)), TJ = TJ max.
rf1
Low level of forward slope resistance
(16.7% x π x IF(AV) < I < π x IF(AV)), T = TJ max.
J2222222222222
mΩ
rf2
High level of forward slope resistance
Max. forward voltage
(I > π x IF(AV)), TJ = TJ max.
I = 1100A, TJ = 25°C, t = 10ms sinusoidal wave
pk
VFM
V
p
Recovery Characteristics
Testconditions
Max. values @ TJ= 125°C
TJ= 25oC
Code
typical t
I
di/dt
V
t
Q
I
rr
pk
r
rr
rr
rr
@ 25% IRRM SquarePulse
@ 25% IRRM
(µs)
1.0
1.5
2.0
(A)
(A/µs)
(V)
-30
(µs)
2.4
2.9
3.2
(µC)
52
(A)
33
44
46
S10
S15
S20
750
25
90
107
D-656
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SD303C..C Series
Fig. 3 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
Fig. 5 - Forward Power Loss Characteristics
Fig. 6 - Forward Power Loss Characteristics
Fig. 7 - Maximum Non-repetitive Surge Current
SingleandDoubleSideCooled
Fig. 8 - Maximum Non-repetitive Surge Current
SingleandDoubleSideCooled
D-659
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SD303C..C Series
Fig. 10 - Thermal Impedance ZthJ-hs Characteristic
Fig. 9 - Forward Voltage Drop Characteristics
Fig. 11 - Typical Forward Recovery Characteristics
Fig. 12 - Recovery Time Characteristics
Fig. 13 - Recovery Charge Characteristics
Fig. 14 - Recovery Current Characteristics
D-660
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SD303C..C Series
Fig. 16 - Recovery Charge Characteristics
Fig. 15 - Recovery Time Characteristics
Fig. 17 - Recovery Current Characteristics
Fig. 18 - Recovery Time Characteristics
Fig. 20 - Recovery Current Characteristics
Fig. 19 - Recovery Charge Characteristics
Fig. 21 - Maximum Total Energy Loss Per Pulse Characteristics
D-661
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SD303C..C Series
Fig. 22 - Maximum Total Energy Loss Per Pulse Characteristics
Fig. 23 - Maximum Total Energy Loss Per Pulse Characteristics
D-662
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SD303C..C Series
Thermal and Mechanical Specifications
Parameter
SD303C..C
Units Conditions
°C
TJ
T
Max. operating temperature range
Max. storage temperature range
-40 to 125
-40 to 150
stg
RthJ-hs Max. thermal resistance,
junctiontoheatsink
0.16
0.08
DC operation singlesidecooled
DC operation doublesidecooled
K/W
F
Mounting force, ± 10%
4900
(500)
70
N
(Kg)
g
wt
Approximate weight
Case style
DO-200AA
SeeOutlineTable
∆RthJ-hs Conduction
(The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC)
Sinusoidal conduction Rectangular conduction
Conduction angle
Units Conditions
23
Single Side Double Side Single Side Double Side
180°
120°
90°
0.010
0.012
0.016
0.024
0.042
0.011
0.013
0.016
0.024
0.042
0.008
0.013
0.018
0.025
0.042
0.008
0.013
0.018
0.025
0.042
K/W
TJ = TJ max.
60°
30°
Ordering Information Table
Device Code
SD 30
3
C
25 S20
C
7
1
2
5
6
3
4
1
2
3
4
5
6
7
-
-
-
-
-
-
-
Diode
Essential part number
3 = Fast recovery
C = Ceramic Puk
Voltage code: Code x 100 = VRRM (see Voltage Ratings table)
code (see Recovery Characteristics table)
t
rr
C = Puk Case DO-200AA
D-6573333
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SD303C..C Series
Outline Table
3.5(0.14) ± 0.1(0.004) DIA. NOM.x
1.8 (0.07) DEEP MIN. BOTH ENDS
12
0.3 (0.01) MIN.
BOTH ENDS
19(0.75) DIA. MAX.
TWO PLACES
38 (1.50) DIA. MAX.
Case Style DO-200AA
All dimensions in millimeters (inches)
222222
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
D-658
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相关型号：
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