OM6531SSV
更新时间：2024-09-18 17:51:14
品牌：INFINEON
描述：Insulated Gate Bipolar Transistor, 15A I(C), 1000V V(BR)CES, N-Channel, HERMETIC SEALED, METAL PACKAGE-7
概述
数据手册OM6531SSV 概述
Insulated Gate Bipolar Transistor, 15A I(C), 1000V V(BR)CES, N-Channel, HERMETIC SEALED, METAL PACKAGE-7
OM6531SSV 数据手册
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OM6532SS
INSULATED GATE BIPOLAR TRANSISTOR
(IGBT) IN A HERMETIC ISOLATED SIP PACKAGE
1000 Volt, 15 Amp, N-Channel IGBT
In A Hermetic Metal Package
FEATURES
• Two Isolated IGBTs In A Hermetic SIP Package
• High Input Impedance
• Low On-Voltage
• High Current Capability
• High Switching Speed
• Low Tail Current
• Available With Free Wheeling Diodes
• Available Screened To MIL-S-19500, TX, TXV And S Levels
DESCRIPTION
This IGBT power transistor features the high switching speeds of a power MOSFET
and the low on-resistance of a bipolar transistor. It is ideally suited for high power
switching applications such as frequency converters for 3Ø motors, UPS and high
power SMPS.
MAXIMUM RATINGS @ 25°C Unless Specified Otherwise
PART
IC (Cont.)
@ 90°C, A
V(BR)CES
V
VCE (sat) (Typ.)
V
Tf (Typ.)
ns
qJC
PD
W
TJ
°C
NUMBER
°C/W
3.1
OM6531SS
OM6532SS
15
15
1000
1000
4.0
4.0
300
300
1.50
1.50
85
85
150
150
SCHEMATIC
MECHANICAL OUTLINE
.270
1.375
.150 DIA.
2 PLS.
MAX
.770
.302
.040
.118
.275
REF
E1
.820
K1
G1
Output K2
G2
C2
.545
1
2
3
4
5
6
7
E
K
G
O
K
G
C
OM6531SS
Pin 1: Emitter
Pin 2: Kelvin
Pin 3: Gate
.500
MIN.
Pin 4: Output
Pin 5: Kelvin
Pin 6: Gate
.150
TYP.
±
.002
.145
.040 DIA.
7 PLCS.
E1
.900
Pin 7: Collector
K1
G1
Output K2
G2
C2
OM6532SS (with Diodes)
PACKAGE OPTIONS
IGBTs are also available in Z-Tab, dual and quad pak styles -
Please call the factory for more information.
MOD-PAK
4 11 R2
Supersedes 2 07 R1
3.1 - 167
PRELIMINARY DATA: OM6531SS
IGBT CHARACTERISTICS
PRELIMINARY DATA: OM6532SS
IGBT CHARACTERISTICS
Parameter - OFF
Min. Typ. Max. Units Test Conditions
Parameter - OFF (see Note 1)
V(BR)CES Collector Emitter
Breakdown Voltage
Min. Typ. Max. Units Test Conditions
V(BR)CES Collector Emitter
Breakdown Voltage
1000
V
VCE = 0
C = 150 µA
150 µA VCE = Max. Rat., VGE = 0
700 µA CE = 0.8 Max. Rat., VGE = 0
C = 125°C
±100 nA VGE = ±20 V
CE = 0 V
1000
V
VCE = 0
C = 150 µA
150 µA VCE = Max. Rat., VGE = 0
700 µA CE = 0.8 Max. Rat., VGE = 0
C = 125°C
±100 nA VGE = ±20 V
CE = 0 V
I
I
ICES
Zero Gate Voltage
Drain Current
ICES
Zero Gate Voltage
Drain Current
V
V
025Craw
T
T
IGES
Gate Emitter Leakage
Current
IGES
Gate Emitter Leakage
Current
V
V
o
S
Parameter - ON
Parameter - ON
VGE(th) Gate Threshold Voltage
VCE(sat) Collector Emitter
Saturation Voltage
4.5
3.5
6.5
V
V
VCE = VGE, IC = 700 µA
VGE = 15 V, IC = 10 A
VGE(th) Gate Threshold Voltage
VCE(sat) Collector Emitter
Saturation Voltage
4.5
3.5
6.5
V
V
VCE = VGE, IC = 700 µA
VGE = 15 V, IC = 10 A
e
,
3.0
3.0
T
C = 25°C
VGE = 15 V, IC = 10 A
C = 125°C
T
C = 25°C
VGE = 15 V, IC = 10 A
C = 125°C
VCE(sat) Collector Emitter
Saturation Voltage
4.0 4.5
V
VCE(sat) Collector Emitter
Saturation Voltage
4.0 4.5
V
nitsr,eAM10
T
T
Dynamic
Dynamic
gfs
Forward Transductance
Input Capacitance
S
VCE = 20 V, IC = 10 A
gfs
Forward Transductance
Input Capacitance
S
VCE = 20 V, IC = 10 A
Cies
Coes
Cres
1300
100
50
pF VGE = 0
Cies
Coes
Cres
1300
100
50
pF VGE = 0
35USA(0
Output Capacitance
pF VCE = 25 V
pF f = 1 mHz
Output Capacitance
pF VCE = 25 V
pF f = 1 mHz
Reverse Transfer Capacitance
Reverse Transfer Capacitance
Switching-Resistive Load
Switching-Resistive Load
)8354
Td(on)
tr
Turn-On Time
Rise Time
50
nS VCC = 600 V, IC = 10 A
nS VGE = 15 V, Rg = 3.3 ,
nS Tj = 125°C
Td(on)
tr
Turn-On Time
Rise Time
50
nS VCC = 600 V, IC = 10 A
nS VGE = 15 V, Rg = 3.3 ,
nS Tj = 125°C
200
200
300
200
200
300
5-7
Td(off)
tf
Turn-Off Delay Time
Fall Time
Td(off)
tf
Turn-Off Delay Time
Fall Time
67FXA(5)0835-426
nS
nS
Switching-Inductive Load
Switching-Inductive Load
Td(off)
tf
Turn-Off Delay Time
Fall Time
200
200
1.1
nS VCEclamp = 600 V, IC = 10 A
nS VGE = 15 V, Rg = 3.3
Td(off)
tf
Turn-Off Delay Time
Fall Time
200
200
1.1
nS VCEclamp = 600 V, IC = 10 A
nS VGE = 15 V, Rg = 3.3
Eoff
Turn-Off Losses
mWs L = 1 mH, Tj = 125°C
Eoff
Turn-Off Losses
mWs L = 1 mH, Tj = 125°C
DIODE CHARACTERISTICS
Vf
Ir
Maximum Forward Voltage
Maximum Reverse Current
Reverse Recovery Time
1.85
1.70
V
V
IF = 30 A, TC = 25°C
IF = 30 A, TC = 150°C
500 µA VR = 1000 V, TC = 25°C
7.0 mA R = 800 V, TC = 125°C
50 nS IF = 1 A, di / dt = -15 A µ/S
R = 30 V, Tj = 25°C
V
trr
V
Note 1: Limited by diode Ir characteristic.
OM6531SSV 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| OM6532SS | ETC | TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 15A I(C) | SIP | 获取价格 |
|
| OM6532SST | INFINEON | Insulated Gate Bipolar Transistor, 15A I(C), 1000V V(BR)CES, N-Channel, HERMETIC SEALED, METAL PACKAGE-7 | 获取价格 |
|
| OM6532SSV | INFINEON | Insulated Gate Bipolar Transistor, 15A I(C), 1000V V(BR)CES, N-Channel, HERMETIC SEALED, METAL PACKAGE-7 | 获取价格 |
|
| OM6533SF | ETC | TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 50A I(C) | FP | 获取价格 |
|
| OM6533SFT | INFINEON | Insulated Gate Bipolar Transistor, 50A I(C), 1000V V(BR)CES, N-Channel, HERMETIC SEALED, METAL PACKAGE-6 | 获取价格 |
|
| OM6534SF | ETC | TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 50A I(C) | FP | 获取价格 |
|
| OM6534SFV | INFINEON | Insulated Gate Bipolar Transistor, 50A I(C), 1000V V(BR)CES, N-Channel, HERMETIC SEALED, METAL PACKAGE-6 | 获取价格 |
|
| OM6535SF | ETC | TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 75A I(C) | FP | 获取价格 |
|
| OM6536SF | ETC | TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 75A I(C) | FP | 获取价格 |
|
| OM6537SP1 | ETC | TRANSISTOR | IGBT | N-CHAN | 500V V(BR)CES | 10A I(C) | SIP | 获取价格 |
|
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