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IRL510LPBF [IRF]

Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB;
IRL510LPBF
元器件型号： IRL510LPBF
生产厂家： INTERNATIONAL RECTIFIER    INTERNATIONAL RECTIFIER
描述和应用：

Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

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PDF文件： 总6页 (文件大小：174K)
下载文档：  下载PDF数据表文档文件
型号参数：IRL510LPBF参数
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IRL510PBF

 Power MOSFET

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26 VISHAY

IRL510PBF

 HEXFET POWER MOSFET

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26 IRF

IRL510S

 Power MOSFET

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21 VISHAY

IRL510S

 HEXFET POWER MOSFET

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15 IRF

IRL510S

 HEXFET POWER MOSFET

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44 IRF

IRL510SPBF

 Power MOSFET

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12 VISHAY

IRL510SPBF

 Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, SMD-220, 3 PIN

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0 VISHAY

IRL510STRL

 Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, SMD-220, 3 PIN

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0 VISHAY

IRL510STRLPBF

 Power MOSFET

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15 VISHAY

IRL510STRLPBF

 Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, SMD-220, 3 PIN

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0 VISHAY

IRL511

 TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 4A I(D) | TO-220AB

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18 ETC

IRL520

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103 ETC

IRL520

 HEXFET POWER MOSFET

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96 IRF

IRL520

 Power MOSFET

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63 VISHAY

IRL520

 Power Field-Effect Transistor, 7.9A I(D), 100V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 SAMSUNG
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