IRL2203NSPBF_15 [IRF]

Advanced Process Technology;
IRL2203NSPBF_15
元器件型号: IRL2203NSPBF_15
生产厂家: INTERNATIONAL RECTIFIER    INTERNATIONAL RECTIFIER
描述和应用:

Advanced Process Technology

PDF文件: 总10页 (文件大小:295K)
下载文档:  下载PDF数据表文档文件
型号参数:IRL2203NSPBF_15参数

IRL2203NSTRL

Power Field-Effect Transistor, 75A I(D), 30V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3

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0 IRF

IRL2203NSTRLPBF

Advanced Process Technology

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0 IRF

IRL2203NSTRR

Power Field-Effect Transistor, 75A I(D), 30V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3

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0 IRF

IRL2203NSTRRPBF

Power Field-Effect Transistor, 75A I(D), 30V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3

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1 IRF

IRL2203S

Power MOSFET(Vdss=30V, Rds(on)=0.007ohm, Id=100A)

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87 IRF

IRL2203SPBF

Power Field-Effect Transistor, 92A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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0 IRF

IRL2203STRL

暂无描述

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0 IRF

IRL2203STRLPBF

暂无描述

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0 IRF

IRL2203STRR

Power Field-Effect Transistor, 92A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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0 IRF

IRL2310

TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 40A I(D) | TO-220AB

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37 ETC

IRL2310

HEXFET Power MOSFET

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30 IRF

IRL2310

Power Field-Effect Transistor, 40A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,

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0 IRF

IRL2310PBF

Power Field-Effect Transistor, 40A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

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0 IRF

IRL2505

Power MOSFET

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254 IRF

IRL2505-011

Power Field-Effect Transistor, 104A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,

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0 INFINEON