IRHY4230CM [INFINEON]
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA); 抗辐射功率MOSFET直通孔（ TO- 257AA ）
| 型号： | IRHY4230CM |
| 厂家： | 
Infineon |
| 描述： | RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) |
| 文件： | 总8页 (文件大小：106K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 91273C
IRHY7230CM
JANSR2N7381
200V, N-CHANNEL
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-257AA)
REF:MIL-PRF-19500/614
RAD-Hard™HEXFET® TECHNOLOGY
Product Summary
Part Number
Radiation Level
RDS(on)
0.40Ω
0.40Ω
0.40Ω
ID
QPL Part Number
IRHY7230CM 100K Rads (Si)
IRHY3230CM 300K Rads (Si)
IRHY4230CM 600K Rads (Si)
9.4A JANSR2N7381
9.4A JANSF227381
9.4A JANSG2N7381
9.4A JANSH2N7381
IRHY8230CM 1000K Rads (Si) 0.40Ω
TO-257AA
International Rectifier’s RADHard HEXFET® technol-
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for bothTotal Dose and Single Event Effects (SEE).
The combination of low Rds(on) and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
Features:
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Low RDS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Eyelets
Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
I
@ V
@ V
= 12V, T = 25°C
Continuous Drain Current
9.4
D
GS
C
A
I
= 12V, T = 100°C Continuous Drain Current
6.0
37
D
GS
C
I
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
DM
@ T = 25°C
P
75
W
W/°C
V
D
C
0.6
V
Gate-to-Source Voltage
±20
GS
E
Single Pulse Avalanche Energy ➀
Avalanche Current ➀
150
mJ
A
AS
I
5.5
AR
E
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➀
Operating Junction
7.5
mJ
V/ns
AR
dv/dt
16
T
-55 to 150
J
T
Storage Temperature Range
oC
g
STG
300 ( 0.063 in.(1.6mm) from case for 10s)
7.0 (Typical )
Lead Temperature
Weight
For footnotes refer to the last page
www.irf.com
1
12/17/01
IRHY7230CM
Pre-Irradiation
Electrical Characteristics @Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
DSS
Drain-to-Source Breakdown Voltage
200
—
—
—
—
V
V
= 0V, I = 1.0mA
D
GS
V/°C Reference to 25°C, I = 1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
0.23
DSS
J
D
Voltage
R
Static Drain-to-Source On-State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
—
—
2.0
2.5
—
—
—
—
—
—
—
0.40
0.49
4.0
—
Ω
V
= 12V, I =6.0A
D
DS(on)
GS
GS
➀
V
= 12V, I = 9.4A
D
V
V
V
DS
= V , I = 1.0mA
GS(th)
fs
GS
D
Ω
g
S ( )
V
DS
> 15V, I
= 6.0A ➀
DS
I
25
250
V
DS
= 160V ,V =0V
DSS
GS
µA
—
V
= 160V,
DS
= 0V, T = 125°C
V
GS
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
7.0
100
-100
50
V
= 20V
= -20V
GSS
GSS
GS
nA
nC
V
GS
Q
Q
Q
V
=12V, I =9.4A
GS D
g
gs
gd
d(on)
r
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
FallTime
10
25
V
DS
= 100V
t
t
t
t
35
V
= 100V, I =9.4A
DD
GS
D
75
70
V
=12V, R = 7.5Ω
G
ns
d(off)
f
60
Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)
L
+ L
Total Inductance
—
S
D
nH
C
Input Capacitance
Output Capacitance
—
—
—
1200
250
63
—
—
—
V
= 0V, V
= 25V
f = 1.0MHz
iss
GS DS
C
oss
C
rss
pF
Reverse Transfer Capacitance
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
I
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
Diode Forward Voltage
—
—
—
—
—
—
—
—
—
—
9.4
37
S
A
SM
V
t
1.4
460
2.4
V
nS
µC
T = 25°C, I = 9.4A, V
= 0V ➀
j
SD
rr
S
GS
Reverse Recovery Time
T = 25°C, I = 9.4A, di/dt ≤ 100A/µs
j
F
Q
Reverse Recovery Charge
V
DD
≤ 50V ➀
RR
t
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
on
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
R
Junction-to-Case
—
—
—
—
1.67
80
thJC
thJA
°C/W
Junction-to-Ambient
Typical socket mount
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
www.irf.com
Radiation Characteristics
IRHY7230CM
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @Tj = 25°C, PostTotal Dose Irradiation ➀➀
1
Parameter
100 KRads(Si)
300 - 1000K Rads (Si)2 Units
Test Conditions
Min
Max
Min
Max
BV
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
200
2.0
—
—
200
1.25
—
—
4.5
100
-100
25
V
= 0V, I = 1.0mA
DSS
GS D
V
V
4.0
V
= V , I = 1.0mA
GS
DS D
GS(th)
I
100
-100
25
V
= 20V
GS
GSS
nA
I
—
—
V
= -20 V
GS
GSS
I
—
—
µA
V
=160V, V
=0V
DSS
DS
GS
R
Static Drain-to-Source
On-State Resistance (TO-3)
Static Drain-to-Source
On-State Resistance (TO-257AA)
Diode Forward Voltage
➀
—
0.40
—
0.53
Ω
V
= 12V, I =6.0A
D
GS
DS(on)
DS(on)
R
➀
—
—
0.40
1.4
—
—
0.53
1.4
Ω
V
GS
= 12V, I =6.0A
D
V
SD
➀
V
V
= 0V, I = 9.4A
GS S
1. Part number IRHY7230CM (JANSR2N7381)
2. Part numbers IRHY3230CM, IRHY4230CM, and IRHY8230CM (JANSF2N7381, JANSG2N7381 and JANSH2N7381)
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
VDS(V)
LET
MeV/(mg/cm²))
Energy Range
Ion
(MeV)
(µm)
@VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V
Cu
Br
28
285
305
43
39
190
100
180
100
170
100
125
50
—
—
36.8
200
150
100
50
Cu
Br
0
0
-5
-10
-15
-20
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHY7230CM
Pre-Irradiation
100
10
1
100
VGS
15V
VGS
TOP
TOP
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
BOTTOM 5.0V
10
5.0V
5.0V
20µs PULSE WIDTH
T = 150 C
20µs PULSE WIDTH
T = 25 C
J
°
°
J
1
1
10
100
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
10
1
2.5
2.0
1.5
1.0
0.5
0.0
9.4A
=
I
D
°
T = 25 C
J
°
T = 150 C
J
V
= 50V
DS
20µs PULSE WIDTH
V
= 12V
GS
5
6
7
8
9
10 11 12
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
V
, Gate-to-Source Voltage (V)
T , Junction Temperature( C)
J
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs.Temperature
4
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Pre-Irradiation
IRHY7230CM
2000
20
16
12
8
V
= 0V,
f = 1MHz
C SHORTED
ds
I
D
= 9.4A
GS
C
= C + C
iss
gs
gd ,
V
V
V
= 160V
= 100V
= 40V
DS
DS
DS
C
= C
rss
gd
C
= C + C
gd
oss
ds
1500
1000
500
0
C
iss
C
C
oss
rss
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
1
10
100
0
10
20
30
40
50
V
, Drain-to-Source Voltage (V)
Q , Total Gate Charge (nC)
G
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
1000
100
10
100
10
1
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10us
°
T = 150 C
J
100us
°
T = 25 C
J
1ms
1
10ms
°
T = 25 C
C
°
T = 150 C
Single Pulse
J
V
= 0 V
GS
0.1
0.1
0.2
1
10
100
1000
0.6
1.0
1.4
1.8
2.2
V
, Drain-to-Source Voltage (V)
-V ,Source-to-Drain Voltage (V)
SD
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
ForwardVoltage
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5
IRHY7230CM
Pre-Irradiation
10
8
RD
VDS
VGS
D.U.T.
RG
+VDD
-
6
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
4
Fig 10a. Switching Time Test Circuit
2
V
DS
90%
0
25
50
75
100
125
150
°
, Case Temperature ( C)
T
C
10%
V
GS
t
t
r
t
t
f
Fig 9. Maximum Drain Current Vs.
d(on)
d(off)
CaseTemperature
Fig 10b. Switching Time Waveforms
10
1
D = 0.50
0.20
0.10
0.05
0.02
P
DM
0.1
t
1
SINGLE PULSE
(THERMAL RESPONSE)
0.01
t
2
Notes:
1. Duty factor D = t / t
1
2
2. Peak T = P
x Z
+ T
C
J
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig11. MaximumEffectiveTransientThermalImpedance,Junction-to-Case
6
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Pre-Irradiation
IRHY7230CM
400
300
200
100
0
I
D
TOP
4.2A
5.9A
BOTTOM 9.4A
15V
DRIVER
L
V
D S
D.U.T
AS
R
G
+
V
D D
-
I
A
V
2
GS
0.01
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit
25
50
75
100
125
150
°
V
(BR)D SS
Starting T , Junction Temperature( C)
J
t
p
Fig 12c. Maximum Avalanche Energy
Vs. DrainCurrent
I
AS
Current Regulator
Fig12b. UnclampedInductiveWaveforms
Same Type as D.U.T.
50KΩ
.2µF
12V
Q
G
.3µF
+
12 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
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7
IRHY7230CM
Foot Notes:
Pre-Irradiation
➀ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
➀ Total Dose Irradiation with V Bias.
➀ Repetitive Rating; Pulse width limited by
maximum junction temperature.
GS
= 0 during
12 volt V
applied and V
➀ V
= 50V, starting T = 25°C, L=3.40mH
J
GS
DS
DD
Peak I = 9.4A, V
irradiation per MIL-STD-750, method 1019, condition A.
=12V
L
GS
➀ Total Dose Irradiation with V Bias.
➀ I
≤ 9.4A, di/dt ≤ 660A/µs,
DS
applied and V = 0 during
GS
SD
160 volt V
DS
V
≤ 200V, T ≤ 150°C
DD
J
irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions —TO-257AA
0.13 [.005]
A
5.08 [.200]
4.83 [.190]
3.81 [.150]
3.56 [.140]
10.66 [.420]
10.42 [.410]
3X Ø
1.14 [.045]
0.89 [.035]
16.89 [.665]
16.39 [.645]
13.63 [.537]
13.39 [.527]
B
10.92 [.430]
10.42 [.410]
1
2
3
0.71 [.028]
MAX.
C
15.88 [.625]
12.70 [.500]
2.54 [.100]
2X
0.88 [.035]
0.64 [.025]
3X Ø
3.05 [.120]
Ø 0.50 [.020]
C
A
B
NOTES:
PIN AS S IGNMENT S
1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1994.
2. CONTROLLING DIMENSION: INCH.
1
2
3
=
=
=
DRAIN
SOURCE
GATE
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OUTLINE CONFORMS TO JEDEC OUTLINE TO-257AA.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 12/01
8
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