IRHNA597260 [INFINEON]

RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2); 抗辐射功率MOSFET表面贴装（ SMD - 2 ）


型号：	IRHNA597260
厂家：	Infineon
描述：	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) 抗辐射功率MOSFET表面贴装（ SMD - 2 ）
文件：	总8页 (文件大小：119K)
中文：	中文翻译
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PD - 94168A

RADIATION HARDENED

POWER MOSFET

SURFACE MOUNT (SMD-2)

IRHNA597260

200V, P-CHANNEL

TECHNOLOGY

Product Summary

Part Number Radiation Level RDS(on)

IRHNA597260 100K Rads (Si) 0.102Ω -35.5A

IRHNA593260 300K Rads (Si) 0.102Ω -35.5A

SMD-2

International Rectifier’s R5^TMtechnology provides

high performance power MOSFETs for space appli-

cations. These devices have been characterized for

Single Event Effects (SEE) with useful performance

up to an LET of 80 (MeV/(mg/cm²)). The combination

of low RDS(on) and low gate charge reduces the power

losses in switching applications such as DC to DC

converters and motor control. These devices retain

all of the well established advantages of MOSFETs

such as voltage control, fast switching, ease of paral-

leling and temperature stability of electrical param-

eters.

Features:

Single Event Effect (SEE) Hardened

Ultra Low RDS(on)

Low Total Gate Charge

Proton Tolerant

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Surface Mount

Ceramic Package

Light Weight

Absolute Maximum Ratings

Pre-Irradiation

Parameter

Units

@ V

= -12V, T = 25°C Continuous Drain Current

-35.5

= -12V, T = 100°C Continuous Drain Current

-22.5

-142

300

Pulsed Drain Current ➀

Max. Power Dissipation

@ T = 25°C

W/°C

Linear Derating Factor

2.4

Gate-to-Source Voltage

±20

Single Pulse Avalanche Energy ➀

Avalanche Current ➀

320

-35.5

dv/dt

Repetitive Avalanche Energy ➀

Peak Diode Recovery dv/dt ➀

Operating Junction

V/ns

-55 to 150

Storage Temperature Range

^oC

STG

Pckg. Mounting Surface Temp.

Weight

300 ( for 5s )

3.3 ( Typical )

For footnotes refer to the last page

www.irf.com

08/07/01

IRHNA597260

Pre-Irradiation

Electrical Characteristics @ T_J= 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

V_GS= 0V, I_D= - 1.0mA

V_(BR)DSS

Drain-to-Source Breakdown Voltage

-200

—

0.25

—

4.0

—

∆V_(BR)DSS/∆T_JBreakdown Voltage Temp. Coefficient

V/°C Reference to 25°C, I_D= -1.0mA

—

0.11

0.102

0.2

-4.0

—

V_GS= -12V, I_D= -35.5A

R_DS(on)

Static Drain-to-Source On-Resistance

—

Ω

V_GS= -12V, I_D= -22.5A

V_GS= -12V, I_D= -22.5A,T_J=125°C

V_DS= V_GS, I_D= -1mA

V_DS> -15V, I_D= -22.5 A

V_DS= -200V, V_GS= 0V

V_DS= -160V, V_GS= 0V, T_J= 125°C

V_GS= -20V

—

V_GS(th)

g_fs

Gate Threshold Voltage

-2.0

—

Forward Transconductance

-10

-25

-100

100

180

I_DSS

I_GSS

Drain-to-Source Leakage Current

µA

—

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Total Gate Charge

—

V_GS= 20V

Q_g

—

I_D= -35.5A

Q_gs

Q_gd

t_d(on)

t_r

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

Rise Time

—

nC V_DS= -100V

V_GS= -12V

—

V_DD= -100V, I_D= -35.5A

—

V_GS= -12V, R_G= 2.35 Ω

t_d(off)

t_f

Turn-Off Delay Time

Fall Time

—

100

200

—

+ L

Total Inductance

—

Measured from the center of

drain pad to center of source pad

C_iss

Input Capacitanc

—

7170

—

V_GS= 0V, V_DS= -25V

C_oss

C_rss

Output Capacitance

—

920

—

ƒ = 1.0MHz

Reverse Transfer Capacitance

Source-Drain Diode Ratings and Characteristics

Parameter

Min Typ Max Units

Test Conditions

Continuous Source Current (Body Diode)

Pulse Source Current (Body Diode) ➀

Diode Forward Voltage

—

-35.5

-142

-5.0

450

µC

T = 25°C, I = -35.5A, V

= 0V ➀

Reverse Recovery Time

T = 25°C, I =-35.5A, di/dt ≤ -100A/µs

Reverse Recovery Charge

5.5

≤ -50V ➀

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .

S D

Thermal Resistance

Parameter

Min Typ Max Units

Test Conditions

Junction-to-Case

—

0.42

—

thJC

°C/W

Junction-to-PC board

1.6

soldered to a 2” square copper-clad board

thJ-PCB

Note: Corresponding Spice and Saber models are available on the G&S Website.

For footnotes refer to the last page

www.irf.com

Radiation Characteristics

Pre-Irradiation

IRHNA597260

International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.

The hardness assurance program at International Rectifier is comprised of two radiation environments.

Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both

pre- and post-irradiation performance are tested and specified using the same drive circuitry and test

conditions in order to provide a direct comparison.

Table 1. Electrical Characteristics @Tj = 25°C, PostTotal Dose Irradiation ➀➀

Parameter

100K Rads(Si)¹

300KRads(Si)²

Units

Test Conditions

Min

Max

Min

Max

Drain-to-Source Breakdown Voltage

Gate Threshold Voltage

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Zero Gate Voltage Drain Current

-200

-2.0

—

-4.0

-100

100

-200

-2.0

—

-5.0

-100

100

= 0V, I = -1.0mA

GS D

DSS

= V , I = -1.0mA

GS(th)

=-20V

GSS

—

= 20 V

GSS

—

-10

0.103

—

-10

0.103

µA

Ω

= -160V, V =0V

= -12V, I =-22.5A

DSS

DS(on)

Static Drain-to-Source

On-State Resistance (TO-3)

Static Drain-to-Source

On-State Resistance (SMD-2)

Diode Forward Voltage

➀

DS(on)

➀

—

0.102

-5.0

—

0.102

-5.0

Ω

= -12V, I =-22.5A

➀

= 0V, I = -35.5A

1. Part number IRHNA597260,

2. Part number IRHNA593260

International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for

Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.

Table 2. Single Event Effect Safe Operating Area

VDS (V)

Ion

LET

(MeV/(mg/cm²))

37.3

Energy

(MeV)

285

345

357

Range

(µm) @VGS=0V @VGS=5V @VGS=10V @VGS=15V @VGS=20V

36.8

32.7

28.5

- 200

- 50

- 35

-75

—

59.9

82.3

-250

-200

-150

-100

-50

VGS

Fig a. Single Event Effect, Safe Operating Area

For footnotes refer to the last page

www.irf.com

IRHNA597260

Pre-Irradiation

1000

100

1000

VGS

-15V

-12V

-10V

-9.0V

-8.0V

-7.0V

-6.0V

TOP

-15V

-12V

-10V

-9.0V

-8.0V

-7.0V

-6.0V

BOTTOM -5.0V

100

-5.0V

20µs PULSE WIDTH

T = 25 C

T = 150 C

100

-V , Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

1000

100

2.5

2.0

1.5

1.0

0.5

0.0

-35.5A

T = 25 C

T = 150 C

= -50V

20µs PULSE WIDTH

= -12V

-60 -40 -20

20 40 60 80 100 120 140 160

5.0

5.5

6.0

6.5 7.0

T , Junction Temperature( C)

-V , Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance

Vs.Temperature

www.irf.com

Pre-Irradiation

IRHNA597260

10000

= 0V,

f = 1MHz

C SHORTED

= -35.5A

= C + C

iss

gd ,

=-160V

=-100V

=-40V

= C

rss

= C + C

8000

6000

4000

2000

oss

iss

oss

FOR TEST CIRCUIT

SEE FIGURE 13

rss

100

150

200

250

-V , Drain-to-Source Voltage (V)

Q , Total Gate Charge (nC)

Fig 6. Typical Gate Charge Vs.

Fig 5. Typical Capacitance Vs.

Gate-to-SourceVoltage

Drain-to-SourceVoltage

1000

100

1000

OPERATION IN THIS AREA

LIMITED BY R (on)

T = 150 C

100

T = 25 C

1ms

10ms

Tc = 25°C

Tj = 150°C

Single Pulse

= 0 V

0.1

0.0

1.5

3.0

4.5

6.0

100

1000

-V ,Source-to-Drain Voltage (V)

-V

, Drain-toSource Voltage (V)

Fig 8. Maximum Safe Operating Area

Fig 7. Typical Source-Drain Diode

ForwardVoltage

www.irf.com

IRHNA597260

Pre-Irradiation

R_D

V_DS

V_GS

D.U.T.

R_G

V_DD

V_GS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

90%

100

125

150

, Case Temperature ( C)

10%

Fig 9. Maximum Drain Current Vs.

d(on)

d(off)

CaseTemperature

Fig 10b. Switching Time Waveforms

D = 0.50

0.1

0.20

0.10

0.05

0.02

0.01

SINGLE PULSE

(THERMAL RESPONSE)

0.01

Notes:

1. Duty factor D = t / t

2. Peak T = P

x Z

+ T

thJC C

0.001

0.00001

0.0001

0.001

0.01

0.1

t , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

www.irf.com

Pre-Irradiation

IRHNA597260

600

500

400

300

200

100

TOP

-16A

-22.5A

BOTTOM-35.5A

D.U.T

V_DD

DRIVER

-20V

0.01

Ω

15V

Fig 12a. Unclamped Inductive Test Circuit

100

125

150

Starting T , Junction Temperature( C)

Fig 12c. Maximum Avalanche Energy

Vs. DrainCurrent

(BR)DSS

Fig 12b. Unclamped Inductive Waveforms

Current Regulator

Same Type as D.U.T.

50KΩ

.2µF

-12V

12V

.3µF

-12 V

D.U.T.

-3mA

Charge

Current Sampling Resistors

Fig 13b. Gate Charge Test Circuit

Fig 13a. Basic Gate Charge Waveform

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IRHNA597260

Footnotes:

Pre-Irradiation

➀➀➀Pulse width ≤ 300 µs; Duty Cycle ≤ 2%

➀➀➀Total Dose Irradiation with V Bias.

➀➀ Repetitive Rating; Pulse width limited by

maximum junction temperature.

= 0 during

-12 volt V

applied and V

➀➀➀V

= -50V, starting T = 25°C, L=0.5 mH

irradiation per MIL-STD-750, method 1019, condition A.

Peak I = - 35.5A, V

= -12V

➀➀Total Dose Irradiation with V

Bias.

= 0 during

➀➀ I

≤ - 35.5A, di/dt ≤ - 450A/µs,

-160 volt V

applied and V

≤ - 200V, T ≤ 150°C

irradiation per MlL-STD-750, method 1019, condition A.

Case Outline and Dimensions — SMD-2

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Data and specifications subject to change without notice. 8/01

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