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IRHF57133SEPBF [IRF]

Power Field-Effect Transistor, 10.5A I(D), 130V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, LEAD FREE, HERMETIC SEALED, MODIFIED TO-39, 3 PIN;

IRHF57133SEPBF


元器件型号：	IRHF57133SEPBF
生产厂家：	INTERNATIONAL RECTIFIER
描述和应用：	Power Field-Effect Transistor, 10.5A I(D), 130V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, LEAD FREE, HERMETIC SEALED, MODIFIED TO-39, 3 PIN 局域网开关脉冲晶体管
PDF文件：	总8页 (文件大小：181K)
下载文档：	下载PDF数据表文档文件
型号参数：IRHF57133SEPBF参数

IRHF57214SE

RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39)

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19 IRF

IRHF57230

RADIATION GARDENED POWER MOSFET THRU-HOLE (TO-39)

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14 IRF

IRHF57230PBF

Power Field-Effect Transistor, 7.3A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, TO-39, 3 PIN

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0 IRF

IRHF57230SCS

Power Field-Effect Transistor, 7.3A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, MODIFIED TO-39, 3 PIN

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0 IRF

IRHF57230SE

RADIATION HARDENED POWER MOSFET THRU-HOLE ( TO-39)

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23 IRF

IRHF57230SE

RADIATION HARDENED POWER MOSFET THRU-HOLE ( TO-39)

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13 IRF

IRHF57230SEPBF

暂无描述

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0 IRF

IRHF57230SESCS

Power Field-Effect Transistor, 7A I(D), 200V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, MODIFIED TO-39, 3 PIN

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0 IRF

IRHF57230SESCSPBF

暂无描述

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0 IRF

IRHF57234SE

RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39)

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22 IRF

IRHF57Z30

RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39)

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15 IRF

IRHF57Z30

TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 12A I(D) | TO-39

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18 ETC

IRHF57Z30PBF

暂无描述

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0 IRF

IRHF57Z30SCSPBF

Power Field-Effect Transistor, 12A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, MODIFIED TO-39, 3 PIN

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0 IRF

IRHF58034

60V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-205AF package

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21 ETC

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