IRFZ34VSTRLPBF [INFINEON]

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型号：	IRFZ34VSTRLPBF
厂家：	Infineon
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PD - _____

PRELIMINARY

IRFZ34N

HEXFET^®Power MOSFET

Advanced Process Technology

Dynamic dv/dt Rating

175°C Operating Temperature

Fast Switching

V_DSS= 55V

R_DS(on)= 0.040Ω

I_D= 26A

Fully Avalanche Rated

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing

techniques to achieve the lowest possible on-resistance per silicon area. This

benefit, combined with the fast switching speed and ruggedized device design that

HEXFET Power MOSFETs are well known for, provides the designer with an

extremely efficient device for use in a wide variety of applications.

The TO-220 package is universally preferred for all commercial-industrial

applications at power dissipation levels to approximately 50 watts. The low

thermal resistance and low package cost of the TO-220 contribute to its wide

acceptance throughout the industry.

Absolute Maximum Ratings

Parameter

Continuous Drain Current, V _GS@ 10V

Pulsed Drain Current

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

100

P_D@T_C= 25°C

Power Dissipation

W/°C

Linear Derating Factor

0.37

±20

110

V_GS

E_AS

I_AR

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

5.6

4.6

V/ns

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 screw.

°C

300 (1.6mm from case)

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Junction-to-Case

Min.

––––

Typ.

––––

0.50

Max.

2.7

Units

R_θJC

R_θCS

R_θJA

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

––––

°C/W

––––

8/29/95

IRFZ34N

Electrical Characteristics @ T_J= 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

55 ––– –––

––– 0.052 ––– V/°C Reference to 25°C, I _D= 1mA

Conditions

V_(BR)DSS

Drain-to-Source Breakdown Voltage

V_GS= 0V, I_D= 250µA

∆V_(BR)DSS/∆T_JBreakdown Voltage Temp. Coefficient

R_DS(ON)

V_GS(th)

g_fs

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

––– ––– 0.040

2.0 ––– 4.0

6.5 ––– –––

––– ––– 25

––– ––– 250

––– ––– 100

––– ––– -100

––– ––– 34

––– ––– 6.8

––– ––– 14

––– 7.0 –––

––– 49 –––

––– 31 –––

––– 40 –––

Ω

V_GS= 10V, I_D= 16A

V_DS= V_GS, I_D= 250µA

V_DS= 25V, I_D= 16A

V_DS= 55V, V_GS= 0V

V_DS= 44V, V_GS= 0V, T_J= 150°C

V_GS= 20V

Forward Transconductance

I_DSS

I_GSS

Drain-to-Source Leakage Current

µA

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Total Gate Charge

V_GS= -20V

Q_g

I_D= 16A

Q_gs

Q_gd

t_d(on)

t_r

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

Rise Time

V_DS= 44V

V_GS= 10V, See Fig. 6 and 13

V_DD= 28V

I_D= 16A

t_d(off)

t_f

Turn-Off Delay Time

Fall Time

R_G= 18Ω

R_D= 1.8Ω, See Fig. 10

Between lead,

L_D

L_S

Internal Drain Inductance

Internal Source Inductance

––– 4.5 –––

––– 7.5 –––

6mm (0.25in.)

from package

and center of die contact

V_GS= 0V

C_iss

C_oss

C_rss

Input Capacitance

––– 700 –––

––– 240 –––

––– 100 –––

Output Capacitance

V_DS= 25V

Reverse Transfer Capacitance

ƒ = 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics

Parameter

Continuous Source Current

(Body Diode)

Min. Typ. Max. Units

Conditions

MOSFET symbol

I_S

––– ––– 26

showing the

I_SM

Pulsed Source Current

(Body Diode)

integral reverse

––– ––– 100

––– ––– 1.6

p-n junction diode.

T_J= 25°C, I_S= 16A, V_GS= 0V

T_J= 25°C, I_F= 16A

di/dt = 100A/µs

V_SD

t_rr

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

Forward Turn-On Time

––– 57

Q_rr

t_on

––– 130 200

Intrinsic turn-on time is negligible (turn-on is dominated by L _S+L_D)

Notes:

Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

_SD≤ 16 A, di/dt ≤ 420A/µs, V_DD≤ V_(BR)DSS,

T_J≤ 175°C

V_DD= 25V, starting T _J= 25°C, L = 610µH

Pulse width ≤ 300µs; duty cycle ≤ 2%.

R_G= 25Ω, I_AS= 16A. (See Figure 12)

IRFZ34N

1000

100

1000

100

VGS

15V

VGS

15V

TOP

10V

8.0V

7.0V

6.0V

5.5V

5.0V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM 4.5V

4.5V

20µs PULSE WIDTH

= 25°C

= 175°C

0.1

100

, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics,

Fig 2. Typical Output Characteristics,

T_C= 25^oC

T_C= 175^oC

2.4

2.0

1.6

1.2

0.8

0.4

0.0

100

= 26A

T_J= 25°C

T = 175°C

V_DS= 25V

20µs PULSE WIDTH

₁₀A

= 10V

-60 -40 -20

20 40 60 80 100 120 140 160 180

T , Junction Temperature (°C)

V_GS, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance

Vs. Temperature

IRFZ34N

1200

= 0V,

f = 1MHz

= 16A

iss

= C + C

SHORTED

= 44V

= 28V

= C

rss

oss

1000

800

600

400

200

= C + C

iss

oss

rss

FOR TEST CIRCUIT

SEE FIGURE 13

100

, Drain-to-Source Voltage (V)

Q , Total Gate Charge (nC)

Fig 5. Typical Capacitance Vs.

Fig 6. Typical Gate Charge Vs.

Drain-to-SourceVoltage

Gate-to-SourceVoltage

1000

100

1000

100

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

10µs

T = 175°C

100µs

T = 25°C

1ms

= 25°C

= 175°C

10ms

Single Pulse

= 0V

100

0.4

0.8

1.2

1.6

2.0

, Drain-to-Source Voltage (V)

, Source-to-Drain Voltage (V)

Fig 7. Typical Source-Drain Diode

Fig 8. Maximum Safe Operating Area

Forward Voltage

IRFZ34N

R_D

V_DS

V_GS

D.U.T.

R_G

V_DD

10 V

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

175

100

125

150

T , Case Temperature (°C)

Fig 9. Maximum Drain Current Vs.

Fig 10b. Switching Time Waveforms

Case Temperature

D = 0.50

0.20

0.10

0.05

D M

0.02

0.01

0.1

SINGLE PULSE

(THERMAL RESPONSE)

Notes:

1. Duty factor D =

/ t

2. Peak T = P

x Z

+ T

D M

thJC

0.01

0.00001

0.0001

0.001

0.01

0.1

t₁, Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

IRFZ34N

250

200

150

100

TOP

6.5A

11A

BOTTOM 16A

10 V

Fig 12a. Unclamped Inductive Test Circuit

= 25V

175

100

125

150

Starting T , Junction Temperature (°C)

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

Fig 12b. Unclamped Inductive Waveforms

10 V

Fig 13a. Basic Gate Charge Waveform

Fig 13b. Gate Charge Test Circuit

Appendix A: Figure 14, Peak Diode Recovery dv/dt Test Circuit

Appendix B: Package Outline Mechanical Drawing

Appendix C: Part Marking Information

IRFZ34N

Appendix A

Peak Diode Recovery dv/dt Test Circuit

Circuit Layout Considerations

Low Stray Inductance

• Ground Plane

D.U.T

•

Low Leakage Inductance

Current Transformer

R_G

•

dv/dt controlled by R _G

• Driver same type as D.U.T.

• I_SDcontrolled by Duty Factor "D"

• D.U.T. - Device Under Test

V_DD

* VGS = 5V for Logic Level Devices

Fig 14. For N-Channel HEXFETS

IRFZ34N

Appendix B

Package Outline

TO-220AB Outline

Dimensions are shown in millimeters (inches)

10.54 (.415)

10.29 (.405)

- B -

3.78 (.149)

3.54 (.139)

2.87 (.113)

2.62 (.103)

4.69 (.185)

4.20 (.165)

1.32 (.052)

1.22 (.048)

- A -

6.47 (.255)

6.10 (.240)

15.24 (.600)

14.84 (.584)

1.15 (.045)

MIN

LEAD ASSIGNMENTS

1 - GATE

2 - DRAIN

3 - SOURCE

4 - DRAIN

14.09 (.555)

13.47 (.530)

4.06 (.160)

3.55 (.140)

0.93 (.037)

0.69 (.027)

0.55 (.022)

0.46 (.018)

1.40 (.055)

1.15 (.045)

0.36 (.014)

B A M

2.92 (.115)

2.64 (.104)

2.54 (.100)

NOTES:

1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.

2 CONTROLLING DIMENSION : INCH

3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.

4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.

Appendix C

Part Marking Information

TO-220AB

EXAMPLE : THIS IS AN IRF1010

WITH ASSEMBLY

INTERNATIONAL

RECTIFIER

LOGO

PART NUMBER

LOT CODE 9B1M

IRF1010

9246

9B 1M

DATE CODE

(YYWW)

ASSEMBLY

LOT CODE

YY = YEAR

WW = WEEK

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