IRFZ34VL [INFINEON]
Advanced Process Technology; 先进的工艺技术
| 型号： | IRFZ34VL |
| 厂家： | 
Infineon |
| 描述： | Advanced Process Technology |
| 文件： | 总10页 (文件大小：129K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 94180
IRFZ34VS
IRFZ34VL
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
HEXFET® Power MOSFET
D
VDSS = 60V
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Optimized for SMPS Applications
RDS(on) = 28mΩ
G
Description
ID = 30A
Advanced HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized device
design that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient and reliable
device for use in a wide variety of applications.
S
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the highest
power capability and the lowest possible on-resistance in any
existing surface mount package. The D2Pak is suitable for
highcurrentapplicationsbecauseofitslowinternalconnection
resistance and can dissipate up to 2.0W in a typical surface
mount application.
D2Pak
IRFZ34VS
TO-262
IRFZ34VL
The through-hole version (IRFZ34VL) is available for low-
profile application.
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10Vꢀ
Continuous Drain Current, VGS @ 10Vꢀ
Pulsed Drain Current ꢀ
30
21
120
A
PD @TC = 25°C
Power Dissipation
70
W
W/°C
V
Linear Derating Factor
0.46
VGS
IAR
Gate-to-Source Voltage
± 20
Avalanche Current
30
A
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ꢀ
Operating Junction and
7.0
mJ
V/ns
4.5
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
°C
300 (1.6mm from case )
Thermal Resistance
Parameter
Junction-to-Case
Typ.
–––
Max.
2.15
Units
RθJC
RθJA
Junction-to-Ambient (PCB Mounted)**
–––
40
°C/W
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1
02/14/02
IRFZ34VS/IRFZ34VL
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
60 ––– –––
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.062 ––– V/°C Reference to 25°C, ID = 1mAꢀ
RDS(on)
VGS(th)
gfs
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
––– ––– 28
mΩ VGS = 10V, ID = 18A
2.0
15
––– 4.0
V
S
VDS = VGS, ID = 250µA
VDS = 25V, ID = 18Aꢀ
VDS = 60V, VGS = 0V
VDS = 48V, VGS = 0V, TJ = 150°C
VGS = 20V
Forward Transconductance
––– –––
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
––– ––– 49
––– ––– 12
––– ––– 18
IDSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
IGSS
VGS = -20V
Qg
ID = 30A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = 48V
VGS = 10V, See Fig. 6 and 13 ꢀ
–––
–––
–––
–––
10 –––
65 –––
31 –––
40 –––
VDD = 30V
ID = 30A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 12Ω
VGS = 10V, See Fig. 10 ꢀ
Between lead,
6mm (0.25in.)
D
4.5
LD
LS
Internal Drain Inductance
Internal Source Inductance
–––
–––
–––
–––
nH
G
from package
7.5
and center of die contact
VGS = 0V
S
Ciss
Coss
Crss
EAS
Input Capacitance
––– 1120 –––
––– 250 –––
Output Capacitance
VDS = 25V
Reverse Transfer Capacitance
Single Pulse Avalanche Energyꢀ
–––
59 –––
pF
ƒ = 1.0MHz, See Fig. 5 ꢀ
––– 260 81
mJ
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
IS
30
––– –––
––– –––
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
120
S
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
––– ––– 1.6
––– 70 110
––– 99 150
V
TJ = 25°C, IS = 30A, VGS = 0V
TJ = 25°C, IF = 30A
ns
Qrr
ton
nC di/dt = 100A/µs ꢀ
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting TJ = 25°C, L = 180µH
RG = 25Ω, IAS = 30A. (See Figure 12)
ISD ≤ 30A, di/dt ≤ 250A/µs, VDD ≤ V(BR)DSS
TJ ≤ 175°C
Pulse width ≤ 400µs; duty cycle ≤ 2%.
ꢀUses IRFZ34V data and test conditions.
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to
application note #AN-994.
,
2
www.irf.com
IRFZ34VS/IRFZ34VL
1000
1000
100
10
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
TOP
TOP
BOTTOM 4.5V
BOTTOM 4.5V
100
10
1
4.5V
4.5V
20µs PULSE WIDTH
20µs PULSE WIDTH
T = 25 C
J
°
°
T = 175 C
J
1
0.1
0.1
1
10
100
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
3.5
30A
=
I
D
3.0
2.5
2.0
1.5
1.0
0.5
0.0
°
T = 25 C
J
100
10
1
°
T = 175 C
J
V
= 50V
DS
20µs PULSE WIDTH
V
=10V
GS
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
4
5
6
7
8
9
10
11
°
T , Junction Temperature ( C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRFZ34VS/IRFZ34VL
20
16
12
8
2000
I
D
= 30A
V
= 0V,
f = 1MHz
C
GS
C
= C + C
SHORTED
ds
iss
gs
gd ,
gd
V
V
V
= 48V
= 30V
= 12V
C
= C
gd
DS
DS
DS
rss
C
= C + C
1600
1200
800
400
0
oss ds
C
iss
C
C
oss
4
FOR TEST CIRCUIT
SEE FIGURE 13
rss
0
1
10
100
0
10
20
30
40
50
V
, Drain-to-Source Voltage (V)
Q
, Total Gate Charge (nC)
DS
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
100
10
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
100
10
1
°
T = 175 C
J
10us
100us
1ms
°
T = 25 C
J
°
T = 25 C
C
°
T = 175 C
Single Pulse
10ms
100
J
V
= 0 V
GS
1.6
0.1
0.0
1
0.4
SD
0.8
1.2
2.0
1
10
1000
V
,Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
www.irf.com
IRFZ34VS/IRFZ34VL
30
25
20
15
10
5
RD
VDS
VGS
D.U.T.
RG
+VDD
-
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
0
25
50
75
100
125
150
175
°
T , Case Temperature ( C)
C
10%
V
GS
Fig 9. Maximum Drain Current Vs.
t
t
r
t
t
f
d(on)
d(off)
Case Temperature
Fig 10b. Switching Time Waveforms
10
D = 0.50
0.20
1
0.10
0.05
P
DM
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.01
t
1
t
2
Notes:
1. Duty factor D =
t / t
1 2
2. Peak T =P
x Z
+ T
thJC C
J
DM
0.00001
0.0001
0.001
0.01
0.1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRFZ34VS/IRFZ34VL
160
120
80
I
15V
D
TOP
12A
21A
30A
BOTTOM
D RIV ER
L
V
DS
D.U .T
R
+
-
G
V
DD
I
A
AS
20V
0.01
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit
40
V
(BR)DSS
t
p
0
25
50
75
100
125
150
175
°
Starting T , Junction Temperature ( C)
J
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
.3µF
Q
G
+
10 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Current Sampling Resistors
Charge
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
6
www.irf.com
IRFZ34VS/IRFZ34VL
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T*
-
+
-
-
+
RG
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
+
-
VDD
VGS
* Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P.W.
Period
Period
D =
P.W.
V
[
=10V
] ***
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
[
[
]
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
]
SD
Ripple ≤ 5%
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 14. For N-channel HEXFET® power MOSFETs
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7
IRFZ34VS/IRFZ34VL
D2Pak Package Outline
10.54 (.415)
10.29 (.405)
10.16 (.400)
REF.
- B -
1.32 (.052)
4.69 (.185)
4.20 (.165)
1.40 (.055)
MAX.
- A -
1.22 (.048)
2
6.47 (.255)
6.18 (.243)
1.78 (.070)
1.27 (.050)
15.49 (.610)
14.73 (.580)
2.79 (.110)
2.29 (.090)
1
3
2.61 (.103)
2.32 (.091)
5.28 (.208)
4.78 (.188)
8.89 (.350)
REF.
1.40 (.055)
1.14 (.045)
1.39 (.055)
1.14 (.045)
3X
0.55 (.022)
0.46 (.018)
0.93 (.037)
0.69 (.027)
3X
5.08 (.200)
0.25 (.010)
M
B A M
MINIMUM RECOMMENDED FOOTPRINT
11.43 (.450)
8.89 (.350)
LEAD ASSIGNMENTS
1 - GATE
NO TES:
1
2
3
4
DIMENSIONS AFTER SO LDER DIP.
17.78 (.700)
2 - DRAIN
3 - SOURCE
DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
CONTROLLING DIMENSION : INCH.
HEATSINK & LEAD DIMENSIONS DO NOT INCLUDE BURRS.
3.81 (.150)
2.54 (.100)
2.08 (.082)
2X
2X
Part Marking Information
D2Pak
A
INTERNATIONAL
RECTIFIER
LOGO
PART NUMBER
F530S
9246
1M
DATE CODE
(YYW W )
9B
ASSEMBLY
YY
=
YEAR
= W EEK
LOT CODE
W W
8
www.irf.com
IRFZ34VS/IRFZ34VL
Package Outline
TO-262 Outline
Part Marking Information
TO-262
www.irf.com
9
IRFZ34VS/IRFZ34VL
Tape & Reel Information
D2Pak
TRR
1 .6 0 (.063 )
1 .5 0 (.059 )
1.60 (.06 3)
1.50 (.05 9)
4.10 (.16 1)
3.90 (.15 3)
0.3 68 (.0145)
0.3 42 (.0135)
FEED DIRECTION
TRL
11.60 (.457)
11.40 (.449)
1.85 (.07 3)
1.65 (.06 5)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
10.90 (.42 9)
10.70 (.42 1)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
M A X.
60.00 (2.362)
MIN .
30.40 (1.197)
M AX.
NO TES :
1. CO MFO RMS TO EIA-418.
2. CO N TR O LLIN G D IM ENSIO N : M ILLIM ET ER .
3. DIMENSIO N MEASUR ED
26.40 (1.039)
24.40 (.961)
4
@ HU B.
3
4. INC LUD ES FLAN G E D ISTO R TIO N
@
O UTER EDG E.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.02/02
10
www.irf.com
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