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元器件品牌
IRFS38N20DPBF
[IRF]
HEXFET Power MOSFET; HEXFET功率MOSFET
元器件型号：
IRFS38N20DPBF
生产厂家：
INTERNATIONAL RECTIFIER
描述和应用：
HEXFET Power MOSFET
HEXFET功率MOSFET
晶体 晶体管 开关 脉冲
PDF文件：
总11页 (文件大小：716K)
下载文档：
下载PDF数据表文档文件
型号参数：IRFS38N20DPBF参数
查看货源
IRFS38N20DTRL
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 44A I(D) | TO-263AB
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IRF
IRFS38N20DTRLP
HEXFETPower MOSFET
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40
IRF
IRFS38N20DTRLPBF
Power Field-Effect Transistor, 43A I(D), 200V, 0.054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3/2
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1
INFINEON
IRFS38N20DTRLPBF
Transistor
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0
IRF
IRFS38N20DTRR
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 44A I(D) | TO-263AB
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29
IRF
IRFS38N20DTRRPBF
Power Field-Effect Transistor, 43A I(D), 200V, 0.054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3
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0
IRF
IRFS4010-7PPBF
HEXFET Power MOSFET
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184
IRF
IRFS4010-7PPBF
Power Field-Effect Transistor, 190A I(D), 100V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, D2PAK-7
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18
IRF
IRFS4010PBF
HEXFET Power MOSFET
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185
IRF
IRFS4010PBF
Power Field-Effect Transistor, 180A I(D), 100V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3
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156
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5
INFINEON
IRFS4010TRL7PP
High Efficiency Synchronous Rectification in SMPS
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28
IRF
IRFS4010TRRPBF
Power Field-Effect Transistor, 180A I(D), 100V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3
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1
INFINEON
IRFS4010TRRPBF
Power Field-Effect Transistor, 180A I(D), 100V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3
Warning
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156
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0
IRF
IRFS4020PBF
Key parameters optimized for Class-D audio amplifier applications
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156
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2
IRF
IRFS4020PBF_15
Key parameters optimized for Class-D audio amplifier applications
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1
IRF
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