关闭背景特效

IRFR3710Z [IRF]

Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resi; 专为汽车应用，这HEXFET功率MOSFET采用了最新的加工技术，以实现极低的导通RESI

IRFR3710Z


元器件型号：	IRFR3710Z
生产厂家：	INTERNATIONAL RECTIFIER
描述和应用：	Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resi 专为汽车应用，这HEXFET功率MOSFET采用了最新的加工技术，以实现极低的导通RESI 晶体晶体管功率场效应晶体管开关脉冲
PDF文件：	总11页 (文件大小：213K)
下载文档：	下载PDF数据表文档文件
型号参数：IRFR3710Z参数

IRFR3710ZHR

Power Field-Effect Transistor, 42A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3/2

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0 IRF

IRFR3710ZPBF

AUTOMOTIVE MOSFET

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121 IRF

IRFR3710ZPBF

HEXFET Power MOSFET

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25 KERSEMI

IRFR3710ZTR

Power Field-Effect Transistor, 42A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK, 3 PIN

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3 IRF

IRFR3710ZTRL

HEXFET Power MOSFET

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22 KERSEMI

IRFR3710ZTRLPBF

HEXFETÂ® Power MOSFET

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61 IRF

IRFR3710ZTRPBF

Advanced Process Technology

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44 IRF

IRFR3710ZTRR

Power Field-Effect Transistor, 42A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK, 3 PIN

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0 IRF

IRFR3711

HEXFETPower MOSFET

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21 SHENZHENFREES

IRFR3711

Power MOSFET(Vdss=20V, Rds(on)max=6.5mohm, Id=110A)

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132 IRF

IRFR3711PBF

HEXFET Power MOSFET

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23 IRF

IRFR3711TR

TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 110A I(D) | TO-252AA

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31 IRF

IRFR3711TRL

TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 110A I(D) | TO-252AA

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22 IRF

IRFR3711TRLPBF

Power Field-Effect Transistor, 30A I(D), 20V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3

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0 IRF

IRFR3711TRPBF

Power Field-Effect Transistor, 30A I(D), 20V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3

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0 IRF

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