IRFR3704TRLPBF [INFINEON]
Power Field-Effect Transistor, 30A I(D), 20V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3;
| 型号： | IRFR3704TRLPBF |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 30A I(D), 20V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 开关 脉冲 晶体管 |
| 文件： | 总10页 (文件大小：152K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 93887D
IRFR3704
SMPS MOSFET
IRFU3704
HEXFET® Power MOSFET
Applications
l High Frequency DC-DC Isolated
Converters with Synchronous Rectification
for Telecom and Industrial use
VDSS
20V
RDS(on) max
ID
75A
9.5mΩ
l High Frequency Buck Converters for
Computer Processor Power
l 100% RG Tested
Benefits
l Ultra-Low RDS(on)
l Very Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
D-Pak
I-Pak
IRFR3704
IRFU3704
Absolute Maximum Ratings
Max
Symbol
Parameter
Units
VDS
VGS
Drain-Source Voltage
20
V
Gate-Source Voltage
± 20
75
Continuous Drain Current, VGS @ 10V
I
I
I
@ T = 25°C
C
D
D
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
63
@ T = 70°C
A
C
300
90
DM
Maximum Power Dissipation
Maximum Power Dissipation
P
P
@T = 25°C
C
D
W
@T = 70°C
62
D
A
Linear Derating Factor
0.58
W/°C
°C
TJ, T
Junction and Storage Temperature Range
-55 to +175
STG
Thermal Resistance
Symbol
Parameter
Junction-to-Case
Typ
Max
1.7
Units
RθJC
RθJA
RθJA
–––
–––
–––
Junction-to-Ambient (PCB Mount) *
Junction-to-Ambient
50
°C/W
110
*
When mounted on 1" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques refer to application note #AN-994
Notes through ꢀ are on page 9
www.irf.com
1
3/4/04
IRFR/U3704
Static @ TJ = 25°C (unless otherwise specified)
Symbol
V(BR)DSS
Parameter
Drain-to-Source Breakdown Voltage
Min Typ Max Units
20 ––– –––
––– 0.021 ––– V/°C Reference to 25°C, ID = 1mA
Conditions
VGS = 0V, ID = 250µA
V
∆V(BR)DSS/∆TJ
Breakdown Voltage Temp. Coefficient
–––
–––
1.0
7.3
11
9.5
14
VGS = 10V, ID = 15A
GS = 4.5V, ID = 12A
RDS(on)
VGS(th)
IDSS
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
mΩ
V
V
–––
–––
–––
–––
3.0
10
VDS = VGS, ID = 250µA
VDS = 20V, VGS = 0V
VDS = 16V, VGS = 0V, TJ = 125°C
VGS = 16V
–––
–––
–––
–––
Drain-to-Source Leakage Current
µA
100
200
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
IGSS
nA
––– -200
VGS = -16V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Forward Transconductance
Total Gate Charge
Min Typ Max Units
Conditions
VDS = 25V, ID = 57A
gfs
Qg
42
–––
–––
–––
–––
–––
24
S
–––
–––
–––
–––
0.3
19
ID = 28.4A
Qgs
Qgd
QOSS
RG
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Gate Resistance
8.1
6.4
16
nC
V
DS = 10V
VGS = 4.5V
GS = 0V, VDS = 10V
V
–––
8.4
98
3.2
Ω
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
–––
–––
–––
–––
–––
–––
–––
–––
VDD = 10V
D = 28.4A
I
Turn-Off Delay Time
Fall Time
12
ns RG = 1.8Ω
VGS = 4.5V
VGS = 0V
5.0
Ciss
Coss
Crss
Input Capacitance
––– 1996 –––
––– 1085 –––
Output Capacitance
Reverse Transfer Capacitance
VDS = 10V
pF
–––
155
–––
ƒ = 1.0MHz
Avalanche Characteristics
Symbol
EAS
IAR
Parameter
Single Pulse Avalanche Energy
Typ
–––
–––
Max
216
Units
mJ
Avalanche Current
71
A
Diode Characteristics
Symbol
Parameter
Min Typ Max Units
Conditions
I
I
Continuous Source Current
MOSFET symbol
S
–––
––– 75
(Body Diode)
Pulsed Source Current
showing the
integral reverse
A
V
SM
–––
–––
300
(Body Diode)
p-n junction diode.
T = 25°C, I = 35.5A, V = 0V
J S GS
V
t
–––
–––
–––
–––
–––
–––
0.88
0.82
38
1.3
–––
57
SD
Diode Forward Voltage
T = 125°C, I = 35.5A, V = 0V
J
S
GS
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
ns T = 25°C, I = 35.5A, VR = 20V
J F
rr
di/dt = 100A/µs
Q
t
45
68
nC
rr
41
62
ns T = 125°C, I = 35.5A, VR= 20V
rr
J
F
di/dt = 100A/µs
Q
50
75
nC
rr
2
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IRFR/U3704
1000
100
10
1000
100
10
VGS
10.0V
VGS
10.0V
9.0V
8.0V
7.0V
6.0V
5.0V
4.5V
TOP
TOP
9.00V
8.0V
7.0V
6.0V
5.0V
4.5V
BOTTOM 3.5V
BOTTOM 3.5V
3.5V
3.5V
20µs PULSE WIDTH
Tj = 175°C
20µs PULSE WIDTH
Tj = 25°C
1
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
2.0
1000
75A
=
I
D
1.5
1.0
0.5
0.0
°
T = 25 C
J
°
T = 175 C
J
100
V
= 15V
DS
V
=10V
20µs PULSE WIDTH
GS
10
3.0
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
°
4.0
5.0
6.0 7.0 8.0
T , Junction Temperature( C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs. Temperature
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3
IRFR/U3704
3000
10
8
V
= 0V,
f = 1MHz
gd , ds
I
D
= 28.4A
GS
V
= 10V
DS
C
= C + C
C
SHORTED
iss
gs
C
= C
gd
rss
2500
2000
1500
1000
500
C
= C + C
ds
oss
gd
C
iss
6
C
oss
4
2
C
rss
0
0
1
10
100
0
10
20
30
40
V
, Drain-to-Source Voltage (V)
Q
, Total Gate Charge (nC)
DS
G
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
1000
100
10
1000
100
10
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10us
°
T = 175 C
J
100us
°
T = 25 C
J
1ms
10ms
1
°
T = 25 C
C
°
T = 175 C
Single Pulse
J
V
= 0 V
GS
1.7
0.1
0.2
1
0.1
0.5
0.8
1.1
1.4
2.0
1
10
100
V
,Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
4
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IRFR/U3704
RD
80
60
40
20
0
VDS
LIMITED BY PACKAGE
VGS
10V
D.U.T.
RG
+VDD
-
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
175
°
, Case Temperature ( C)
T
C
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10b. Switching Time Waveforms
10
1
D = 0.50
0.20
0.10
0.05
P
2
DM
0.1
0.02
0.01
t
SINGLE PULSE
(THERMAL RESPONSE)
1
t
2
Notes:
1. Duty factor D = t / t
1
2. Peak T =P
x Z
+ T
C
J
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRFR/U3704
0.020
0.010
0.009
0.008
0.007
0.006
VGS = 4.5V
0.015
0.010
0.005
I
= 35.5A
D
VGS = 10V
0
50
100
150
200
250
300
4.0
5.0
6.0
7.0
8.0
9.0
10.0
I
, Drain Current ( A )
V
Gate -to -Source Voltage (V)
D
GS,
Fig 12. On-Resistance Vs. Drain Current
Fig 13. On-Resistance Vs. Gate Voltage
Current Regulator
Same Type as D.U.T.
Q
G
50KΩ
.3µF
VGS
.2µF
12V
Q
Q
GD
GS
600
+
V
DS
I
D.U.T.
-
D
V
G
TOP
11.6A
23.8A
V
GS
500
400
300
200
100
0
3mA
Charge
BOTTOM 28.4A
I
I
D
G
Current Sampling Resistors
Fig 14a&b. Basic Gate Charge Test Circuit
and Waveforms
15V
V
(BR)DSS
DRIVER
+
L
t
p
V
DS
D.U.T
AS
R
G
V
DD
-
25
50
75
100
125
150
175
I
20V
°
Starting T , Junction Temperature( C)
0.01
Ω
t
J
p
I
AS
Fig 15a&b. Unclamped Inductive Test Circuit
Fig 15c. Maximum Avalanche Energy
and Waveforms
Vs. Drain Current
6
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IRFR/U3704
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
2.38 (.094)
2.19 (.086)
6.73 (.265)
6.35 (.250)
1.14 (.045)
0.89 (.035)
- A -
1.27 (.050)
5.46 (.215)
0.58 (.023)
0.46 (.018)
0.88 (.035)
5.21 (.205)
4
6.45 (.245)
5.68 (.224)
6.22 (.245)
5.97 (.235)
10.42 (.410)
9.40 (.370)
1.02 (.040)
1.64 (.025)
LEAD ASSIGNMENTS
1 - GATE
1
2
3
2 - DRAIN
0.51 (.020)
MIN.
- B -
3 - SOURCE
4 - DRAIN
1.52 (.060)
1.15 (.045)
0.89 (.035)
0.64 (.025)
3X
0.58 (.023)
0.46 (.018)
1.14 (.045)
0.76 (.030)
2X
0.25 (.010)
M A M B
NOTES:
2.28 (.090)
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
2 CONTROLLING DIMENSION : INCH.
4.57 (.180)
3 CONFORMS TO JEDEC OUTLINE TO-252AA.
4 DIMENSIONS SHOWN ARE BEFORE SOLDER DIP,
SOLDER DIP MAX. +0.16 (.006).
D-Pak (TO-252AA) Part Marking Information
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7
IRFR/U3704
I-Pak (TO-251AA) Package Outline
Dimensions are shown in millimeters (inches)
6.73 (.265)
6.35 (.250)
2.38 (.094)
2.19 (.086)
- A -
0.58 (.023)
0.46 (.018)
1.27 (.050)
5.46 (.215)
0.88 (.035)
5.21 (.205)
LEAD ASSIGNMENTS
1 - GATE
4
2 - DRAIN
6.45 (.245)
5.68 (.224)
3 - SOURCE
4 - DRAIN
6.22 (.245)
5.97 (.235)
1.52 (.060)
1.15 (.045)
1
2
3
- B -
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
2 CONTROLLING DIMENSION : INCH.
2.28 (.090)
1.91 (.075)
9.65 (.380)
8.89 (.350)
3 CONFORMS TO JEDEC OUTLINE TO-252AA.
4 DIMENSIONS SHOWN ARE BEFORE SOLDER DIP,
SOLDER DIP MAX. +0.16 (.006).
1.14 (.045)
0.76 (.030)
1.14 (.045)
0.89 (.035)
3X
0.89 (.035)
0.64 (.025)
3X
0.25 (.010)
M A M B
0.58 (.023)
0.46 (.018)
2.28 (.090)
2X
I-Pak (TO-251AA) Part Marking Information
8
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IRFR/U3704
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRL
TRR
16.3 ( .641 )
15.7 ( .619 )
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature.
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 30A
ꢀ Rθ is measured at TJ approximately 90°C
Starting TJ = 25°C, L = 0.5 mH
RG = 25Ω, IAS = 28.4 A.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 3/04
www.irf.com
9
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
相关型号：
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Power Field-Effect Transistor, 30A I(D), 20V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3
INFINEON
IRFR3704TRRPBF
Power Field-Effect Transistor, 30A I(D), 20V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3
INFINEON
IRFR3704ZTRLPBF
Power Field-Effect Transistor, 30A I(D), 20V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3
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