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IRFI9630G [INFINEON]

Power MOSFET(Vdss=-200V, Rds(on)=0.80ohm, Id=-4.3A); 功率MOSFET ( VDSS = -200V , RDS(ON) = 0.80ohm ,ID = -4.3A )
IRFI9630G
型号: IRFI9630G
厂家: Infineon    Infineon
描述:

Power MOSFET(Vdss=-200V, Rds(on)=0.80ohm, Id=-4.3A)
功率MOSFET ( VDSS = -200V , RDS(ON) = 0.80ohm ,ID = -4.3A )

晶体 晶体管 功率场效应晶体管 开关 脉冲 局域网
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相关型号:

IRFI9630G-002

Power Field-Effect Transistor, 4.3A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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INFINEON

IRFI9630G-002PBF

Power Field-Effect Transistor, 4.3A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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IRFI9630G-002PBF

Power Field-Effect Transistor, 4.3A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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IRFI9630G-003PBF

Power Field-Effect Transistor, 4.3A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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IRFI9630G-003PBF

Power Field-Effect Transistor, 4.3A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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IRFI9630G-004PBF

Power Field-Effect Transistor, 4.3A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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IRFI9630G-005PBF

Power Field-Effect Transistor, 4.3A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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IRFI9630G-006PBF

Power Field-Effect Transistor, 4.3A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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IRFI9630G-009

Power Field-Effect Transistor, 4.3A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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IRFI9630G-009PBF

Power Field-Effect Transistor, 4.3A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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IRFI9630G-009PBF

Power Field-Effect Transistor, 4.3A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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IRFI9630G-010

Power Field-Effect Transistor, 4.3A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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IRFI9630G-010PBF

Power Field-Effect Transistor, 4.3A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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IRFI9630G-011

Power Field-Effect Transistor, 4.3A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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IRFI9630G-011PBF

Power Field-Effect Transistor, 4.3A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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IRFI9630G-012

Power Field-Effect Transistor, 4.3A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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IRFI9630G-012PBF

Power Field-Effect Transistor, 4.3A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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IRFI9630G-013PBF

Power Field-Effect Transistor, 4.3A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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IRFI9630G-015PBF

Power Field-Effect Transistor, 4.3A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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IRFI9630G-017

Power Field-Effect Transistor, 4.3A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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