IRFI9520G-012PBF [IRF]

Power Field-Effect Transistor, 5.2A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN;
IRFI9520G-012PBF
型号: IRFI9520G-012PBF
厂家: INTERNATIONAL RECTIFIER    INTERNATIONAL RECTIFIER
描述:

Power Field-Effect Transistor, 5.2A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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IRFI9520G-013PBF

Power Field-Effect Transistor, 5.2A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 IRF

IRFI9520G-015

Power Field-Effect Transistor, 5.2A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 IRF

IRFI9520G-015PBF

Power Field-Effect Transistor, 5.2A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 VISHAY

IRFI9520G-015PBF

Power Field-Effect Transistor, 5.2A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 IRF

IRFI9520G-018PBF

Power Field-Effect Transistor, 5.2A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 IRF

IRFI9520G-019PBF

Power Field-Effect Transistor, 5.2A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 IRF

IRFI9520G-030PBF

Power Field-Effect Transistor, 5.2A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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-
0 VISHAY

IRFI9520G-030PBF

Power Field-Effect Transistor, 5.2A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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-
0 IRF

IRFI9520GPBF

Power MOSFET

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15 VISHAY

IRFI9520GPBF

HEXFET Power MOSFET

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13 IRF

IRFI9520N

TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 5.5A I(D) | TO-220AB

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19 ETC

IRFI9530G

Power MOSFET(Vdss=-100V, Rds(on)=0.30ohm, Id=-7.7A)

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54 IRF

IRFI9530G

Power MOSFET

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30 VISHAY

IRFI9530G

Power Field-Effect Transistor, 7.7A I(D), 100V, 0.03ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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2 VISHAY

IRFI9530G-002PBF

Power Field-Effect Transistor, 7.7A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 IRF