IRF9956PBF [IRF]

HEXFET Power MOSFET; HEXFET功率MOSFET

IRF9956PBF


型号：	IRF9956PBF
厂家：	INTERNATIONAL RECTIFIER
描述：	HEXFET Power MOSFET HEXFET功率MOSFET 晶体晶体管功率场效应晶体管开关脉冲光电二极管 PC 局域网
文件：	总7页 (文件大小：170K)
下载：	下载PDF数据表文档文件

IRF9956TR

Power Field-Effect Transistor, 3.5A I(D), 30V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

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0 IRF

IRF9956TR

Power Field-Effect Transistor, 3.5A I(D), 30V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA,

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0 INFINEON

IRF9956TRPBF

Power Field-Effect Transistor, 3.5A I(D), 30V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA,

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0 INFINEON

IRF9956TRPBF

Power Field-Effect Transistor, 3.5A I(D), 30V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA,

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0 IRF

IRF9D

Analog IC

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20 ETC

IRF9S

Analog IC

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20 ETC

IRF9Z10

TRANSISTOR | MOSFET | P-CHANNEL | 50V V(BR)DSS | 4.7A I(D) | TO-220

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57 ETC

IRF9Z10

HEXFET Power MOSFET

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42 IRF

IRF9Z10

Power Field-Effect Transistor, 6.7A I(D), 50V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN

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3 VISHAY

IRF9Z10-003PBF

Power Field-Effect Transistor, 4.7A I(D), 50V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,

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0 INFINEON

IRF9Z10-011PBF

Power Field-Effect Transistor, 4.7A I(D), 50V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,

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0 INFINEON

IRF9Z10-013

Power Field-Effect Transistor, 4.7A I(D), 50V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,

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0 INFINEON

IRF9Z10PBF

Power Field-Effect Transistor, 6.7A I(D), 50V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3

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1 VISHAY

IRF9Z10STRRPBF

Power Field-Effect Transistor, 4.7A I(D), 50V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,

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0 INFINEON

IRF9Z12

TRANSISTOR | MOSFET | P-CHANNEL | 50V V(BR)DSS | 4A I(D) | TO-220

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40 ETC

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