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元器件品牌
IRF7MS2907
[IRF]
HEXFET POWER MOSFET THRU-HOLE (Low-ohmic TO-254AA); HEXFET功率MOSFET直通孔（低电阻TO- 254AA ）
元器件型号：
IRF7MS2907
生产厂家：
INTERNATIONAL RECTIFIER
描述和应用：
HEXFET POWER MOSFET THRU-HOLE (Low-ohmic TO-254AA)
HEXFET功率MOSFET直通孔（低电阻TO- 254AA ）
晶体 晶体管 功率场效应晶体管 开关 脉冲 局域网
PDF文件：
总7页 (文件大小：136K)
下载文档：
下载PDF数据表文档文件
型号参数：IRF7MS2907参数
查看货源
IRF7MS2907PBF
Power Field-Effect Transistor, 45A I(D), 75V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3
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156
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0
IRF
IRF7N1405
HEXFET-R POWER MOSFET SURFACE MOUNT (SMD-1)
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42
IRF
IRF7N1405
HEXFET-R POWER MOSFET SURFACE MOUNT (SMD-1)
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156
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53
IRF
IRF7N1405_07
HEXFET POWER MOSFET SURFACE MOUNT (SMD-1)
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30
IRF
IRF7N60
POWER MOSFET
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156
-
81
SUNTAC
IRF7N60FP
POWER MOSFET
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156
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15
SUNTAC
IRF7NA2907
HEXFET POWER MOSFET SURFACE MOUNT (SMD-2)
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47
IRF
IRF7NA2907
75V Single N-Channel Hi-Rel MOSFET in a SMD-2 package
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41
ETC
IRF7NA2907PBF
Power Field-Effect Transistor, 75A I(D), 75V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD-2, 3 PIN
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156
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0
IRF
IRF7NA2907SCS
Power Field-Effect Transistor, 75A I(D), 75V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETICALLY SEALED, SMD-2, 3 PIN
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156
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0
INFINEON
IRF7NJZ44V
60V Single N-Channel Hi-Rel MOSFET in a SMD-0.5 package
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156
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10
ETC
IRF7NJZ44V
HEXFET-R POWER MOSFET SURFACE MOUNT (SMD-0.5)
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29
IRF
IRF7NJZ44VPBF
Power Field-Effect Transistor, 22A I(D), 60V, 0.0165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD-0.5, 3 PIN
Warning
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0
IRF
IRF7Y1405CM
TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 18A I(D) | TO-257AA
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10
ETC
IRF7Y1405CM
HEXFET® POWER MOSFET THRU-HOLE (TO-257AA)
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13
IRF
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