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IRF7207PBF [INFINEON]

HEXFET㈢ Power MOSFET; HEXFET㈢功率MOSFET
IRF7207PBF
型号： IRF7207PBF
厂家： Infineon    Infineon
描述：

HEXFET㈢ Power MOSFET
HEXFET㈢功率MOSFET

晶体 晶体管 功率场效应晶体管 开关 脉冲 光电二极管
文件： 总7页 (文件大小：150K)
中文：  中文翻译
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PD - 95166  
IRF7207PbF  
HEXFET® Power MOSFET  
l Generation 5 Technology  
l P-Channel Mosfet  
l Surface Mount  
l Available in Tape & Reel  
l Dynamic dv/dt Rating  
A
1
2
3
4
8
D
S
S
VDSS = -20V  
7
D
6
S
G
D
5
D
l Fast Switching  
l Lead-Free  
RDS(on) = 0.06Ω  
Top View  
Description  
Fifth Generation HEXFET® Power MOSFETs from  
International Rectifier utilize advanced processing  
techniques to achieve extremely low on-resistance  
per silicon area. This benefit, combined with the fast  
switching speed and ruggedized device design that  
HEXFETpowerMOSFETsarewellknownfor,provides  
the designer with an extremely efficient and reliable  
device for use in a wide variety of applications.  
The SO-8 has been modified through a customized  
leadframe for enhanced thermal characteristics and  
multiple-die capability making it ideal in a variety of  
powerapplications. Withtheseimprovements,multiple  
devices can be used in an application with dramatically  
reduced board space. The package is designed for  
vapor phase, infra red, or wave soldering techniques.  
Power dissipation of greater than 0.8W is possible in a  
typical PCB mount application.  
SO-8  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
VDS  
Drain- Source Voltage  
-20  
V
ID @ TC = 25°C  
ID @ TC = 70°C  
IDM  
Continuous Drain Current, VGS @ -4.5V  
Continuous Drain Current, VGS @ -4.5V  
Pulsed Drain Current   
Power Dissipation  
-5.4  
-4.3  
A
-43  
PD @TC = 25°C  
PD @TC = 70°C  
2.5  
W
Power Dissipation  
1.6  
Linear Derating Factor  
0.02  
W/°C  
VGS  
Gate-to-Source Voltage  
± 12  
-16  
V
V
VGSM  
EAS  
Gate-to-Source Voltage Single Pulse tp<10µs  
Single Pulse Avalanche Energy‚  
140  
dv/dt  
TJ, TSTG  
Peak Diode Recovery dv/dt ƒ  
-5.0  
V/ns  
°C  
Junction and Storage Temperature Range  
-55 to + 150  
Thermal Resistance  
Parameter  
Maximum Junction-to-Ambientꢀ  
Typ.  
–––  
Max.  
50  
Units  
°C/W  
RθJA  
www.irf.com  
1
10/6/04  
IRF7207PbF  
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)  
Parameter  
Min. Typ. Max. Units  
Conditions  
V(BR)DSS  
Drain-to-Source Breakdown Voltage  
-20 ––– –––  
V
VGS = 0V, ID = -250µA  
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient  
––– -0.011 ––– V/°C Reference to 25°C, ID = -1mA  
––– ––– 0.06  
––– ––– 0.10  
-0.7 ––– –––  
8.3 ––– –––  
––– ––– -1.0  
––– ––– -25  
––– ––– -100  
––– ––– 100  
VGS = -4.5V, ID = -5.4A „  
VGS = -2.7V, ID = -2.7A „  
VDS = VGS, ID = -250µA  
VDS = -10V, ID = -5.4A  
VDS = -16V, VGS = 0V  
VDS = -16V, VGS = 0V, TJ = 125°C  
VGS = 12V  
RDS(on)  
Static Drain-to-Source On-Resistance  
Ω
VGS(th)  
gfs  
GateThresholdVoltage  
V
S
Forward Transconductance  
IDSS  
IGSS  
Drain-to-Source Leakage Current  
µA  
nA  
Gate-to-Source Forward Leakage  
Gate-to-Source Reverse Leakage  
Total Gate Charge  
VGS = -12V  
Qg  
––– 15  
22  
ID = -5.4A  
Qgs  
Qgd  
td(on)  
tr  
Gate-to-Source Charge  
Gate-to-Drain ("Miller") Charge  
Turn-On Delay Time  
Rise Time  
––– 2.2 3.3  
––– 5.7 8.6  
––– 11 –––  
––– 24 –––  
––– 43 –––  
––– 41 –––  
––– 780 –––  
––– 410 –––  
––– 200 –––  
nC VDS = -10V  
VGS = -4.5V, „  
VDD = -10V  
ID = -1.0A  
ns  
td(off)  
tf  
Turn-Off Delay Time  
Fall Time  
RG = 6.0Ω  
RD = 10Ω, „  
VGS = 0V  
Ciss  
Coss  
Crss  
Input Capacitance  
Output Capacitance  
pF  
VDS = -15V  
ƒ = 1.0MHz,  
Reverse Transfer Capacitance  
Source-Drain Ratings and Characteristics  
Parameter  
Continuous Source Current  
(Body Diode)  
Min. Typ. Max. Units  
Conditions  
MOSFET symbol  
showing the  
D
S
IS  
––– ––– -3.1  
A
G
ISM  
Pulsed Source Current  
(Body Diode)   
integral reverse  
p-n junction diode.  
––– ––– -43  
VSD  
trr  
Diode Forward Voltage  
Reverse Recovery Time  
Reverse RecoveryCharge  
––– ––– -1.0  
V
TJ = 25°C, IS = -3.1A, VGS = 0V ƒ  
––– 42  
––– 50  
63  
75  
ns  
TJ = 25°C, IF = -3.1A  
Qrr  
nC di/dt = -100A/µs ƒ  
Notes:  
 Repetitive rating; pulse width limited by  
ƒ ISD ≤ -5.4A, di/dt ≤ -79A/µs, VDD ≤ V(BR)DSS  
,
max. junction temperature.  
TJ ≤ 150°C  
‚ Starting TJ = 25°C, L = 9.6mH  
RG = 25Ω, IAS = -5.4A.  
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.  
ꢀ When mounted on 1 inch square copper board, t<10 sec  
2
www.irf.com  
IRF7207PbF  
100  
10  
1
100  
10  
1
VGS  
VGS  
TOP  
-7.00V  
-5.00V  
-4.50V  
-3.50V  
-3.00V  
-2.70V  
-2.50V  
TOP  
-7.00V  
-5.00V  
-4.50V  
-3.50V  
-3.00V  
-2.70V  
-2.50V  
BOTTOM -2.25V  
BOTTOM -2.25V  
-2.25V  
-2.25V  
20µs PULSE WIDTH  
20µs PULSE WIDTH  
°
°
T = 150 C  
J
T = 25 C  
J
0.1  
1
10  
0.1  
1
10  
-V , Drain-to-Source Voltage (V)  
DS  
-V , Drain-to-Source Voltage (V)  
DS  
Fig 1. Typical Output Characteristics  
Fig 2. Typical Output Characteristics  
100  
2.0  
-5.4A  
=
I
D
°
T = 25 C  
J
1.5  
1.0  
0.5  
0.0  
°
T = 150 C  
J
10  
V
= -10V  
DS  
-4.5V  
=
V
GS  
20µs PULSE WIDTH  
1
2.0  
-60 -40 -20  
0
20 40 60 80 100 120 140 160  
°
3.0  
4.0  
5.0  
6.0  
T , Junction Temperature ( C)  
J
-V , Gate-to-Source Voltage (V)  
GS  
Fig 3. Typical Transfer Characteristics  
Fig 4. Normalized On-Resistance  
Vs. Temperature  
www.irf.com  
3
IRF7207PbF  
10  
8
1600  
I = -5.4A  
D
V
= 0V,  
f = 1MHz  
C SHORTED  
ds  
GS  
C
= C + C  
iss  
gs  
gd ,  
V
=-10V  
C
= C  
DS  
rss  
gd  
C
= C + C  
oss  
ds  
gd  
1200  
800  
400  
0
6
C
iss  
4
C
oss  
rss  
C
2
FOR TEST CIRCUIT  
SEE FIGURE 13  
0
1
10  
100  
0
5
10  
15  
20  
25  
30  
-V , Drain-to-Source Voltage (V)  
DS  
Q , Total Gate Charge (nC)  
G
Fig 6. Typical Gate Charge Vs.  
Fig 5. Typical Capacitance Vs.  
Gate-to-Source Voltage  
Drain-to-Source Voltage  
100  
10  
1
100  
10  
1
OPERATION IN THIS AREA LIMITED  
BY R  
DS(on)  
°
T = 150 C  
J
100us  
1ms  
°
T = 25 C  
J
°
10ms  
T = 25 C  
A
J
°
T = 150 C  
V
= 0 V  
GS  
1.2  
Single Pulse  
0.1  
0.4  
0.6  
0.7  
0.9  
1.1  
1.4  
1
10  
100  
-V ,Source-to-Drain Voltage (V)  
SD  
-V , Drain-to-Source Voltage (V)  
DS  
Fig 8. Maximum Safe Operating Area  
Fig 7. Typical Source-Drain Diode  
Forward Voltage  
4
www.irf.com  
IRF7207PbF  
400  
300  
200  
100  
0
6.0  
5.0  
4.0  
3.0  
2.0  
1.0  
0.0  
I
D
TOP  
-2.4A  
-4.3A  
BOTTOM -5.4A  
25  
50  
75  
100  
125  
°
150  
25  
50  
75  
100  
125  
150  
T , Case Temperature ( C)  
C
°
Starting T , Junction Temperature ( C)  
J
Fig 9. Maximum Drain Current Vs.  
Fig 10. Maximum Avalanche Energy  
Case Temperature  
Vs. Drain Current  
100  
10  
1
D = 0.50  
0.20  
0.10  
0.05  
P
2
DM  
0.02  
0.01  
t
1
t
2
Notes:  
1. Duty factor D =  
2. Peak T =P  
J
SINGLE PULSE  
t / t  
1
x Z  
(THERMAL RESPONSE)  
+ T  
10  
DM  
thJA  
A
0.1  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
100  
t , Rectangular Pulse Duration (sec)  
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient  
www.irf.com  
5
IRF7207PbF  
SO-8 Package Outline  
Dimensions are shown in milimeters (inches)  
INCHES  
MILLIMETERS  
DIM  
A
D
B
MIN  
.0532  
MAX  
.0688  
.0098  
.020  
MIN  
1.35  
0.10  
0.33  
0.19  
4.80  
3.80  
MAX  
1.75  
0.25  
0.51  
0.25  
5.00  
4.00  
5
A
E
A1 .0040  
b
c
D
E
.013  
8
1
7
2
6
3
5
.0075  
.189  
.0098  
.1968  
.1574  
6
H
0.25 [.010]  
A
.1497  
4
e
.050 BASIC  
1.27 BASIC  
0.635 BASIC  
e1 .025 BASIC  
H
K
L
.2284  
.0099  
.016  
0°  
.2440  
.0196  
.050  
8°  
5.80  
0.25  
0.40  
0°  
6.20  
0.50  
1.27  
8°  
e
6X  
y
e1  
A
K x 45°  
A
C
y
0.10 [.004]  
8X c  
A1  
B
8X L  
8X b  
0.25 [.010]  
7
C
F OOT PRINT  
8X 0.72 [.028]  
NOT ES :  
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.  
2. CONTROLLING DIMENSION: MILLIMETER  
3. DIMENS IONS ARE S HOWN IN MIL L IME T E RS [INCHES ].  
4. OUT L INE CONF OR MS T O JEDEC OU T LINE MS -012AA.  
5
6
7
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.  
MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].  
6.46 [.255]  
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.  
MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].  
DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO  
ASUBSTRATE.  
3X 1.27 [.050]  
8X 1.78 [.070]  
SO-8 Part Marking Information (Lead-Free)  
EXAMPLE: THIS IS AN IRF7101 (MOSFET)  
DAT E CODE (YWW)  
P = DE S IGNAT E S L E AD-F RE E  
PRODUCT (OPTIONAL)  
Y = LAST DIGIT OF THE YEAR  
WW = WE E K  
XXXX  
F7101  
INTERNATIONAL  
RECTIFIER  
LOGO  
A = AS S E MB LY S IT E CODE  
LOT CODE  
PART NUMBER  
6
www.irf.com  
IRF7207PbF  
SO-8 Tape and Reel  
Dimensions are shown in milimeters (inches)  
TERMINAL NUMBER 1  
12.3 ( .484 )  
11.7 ( .461 )  
8.1 ( .318 )  
7.9 ( .312 )  
FEED DIRECTION  
NOTES:  
1. CONTROLLING DIMENSION : MILLIMETER.  
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).  
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.  
330.00  
(12.992)  
MAX.  
14.40 ( .566 )  
12.40 ( .488 )  
NOTES :  
1. CONTROLLING DIMENSION : MILLIMETER.  
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.  
Data and specifications subject to change without notice.  
This product has been designed and qualified for the Consumer market.  
Qualifications Standards can be found on IR’s Web site.  
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105  
TAC Fax: (310) 252-7903  
Visit us at www.irf.com for sales contact information.10/04  
www.irf.com  
7

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