IRF630N [IRF]

HEXFET Power MOSFET; HEXFET功率MOSFET

IRF630N


型号：	IRF630N
厂家：	INTERNATIONAL RECTIFIER
描述：	HEXFET Power MOSFET HEXFET功率MOSFET 晶体晶体管功率场效应晶体管开关局域网
文件：	总11页 (文件大小：241K)
下载：	下载PDF数据表文档文件

IRF630N_04

HEXFET Power MOSFET

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28 IRF

IRF630NL

N-Channel Power MOSFETs 200V, 9.3A, 0.30з

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23 FAIRCHILD

IRF630NL

HEXFET Power MOSFET

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31 IRF

IRF630NL

Power MOSFET

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14 TRSYS

IRF630NL

Power MOSFET(Vdss=200V, Rds(on)=0.30ohm, Id=9.3A)

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67 IRF

IRF630NLPBF

HEXFET Power MOSFET

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28 IRF

IRF630NPBF

HEXFET Power MOSFET

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209 IRF

IRF630NPBF

Power Field-Effect Transistor, 9.3A I(D), 200V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3

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1 IRF

IRF630NPBF

Power Field-Effect Transistor, 9.3A I(D), 200V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3

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5 INFINEON

IRF630NPBF_15

Advanced Process Technology

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0 IRF

IRF630NS

N-Channel Power MOSFETs 200V, 9.3A, 0.30з

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34 FAIRCHILD

IRF630NS

HEXFET Power MOSFET

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52 IRF

IRF630NS

Power MOSFET

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30 TRSYS

IRF630NS

Power MOSFET(Vdss=200V, Rds(on)=0.30ohm, Id=9.3A)

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145 IRF

IRF630NSL86Z

Power Field-Effect Transistor, 9.3A I(D), 200V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

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0 FAIRCHILD

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