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IRF630NSTRL [IRF]

TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 9.3A I(D) | TO-263AB ; 晶体管| MOSFET | N沟道| 200V V（ BR ） DSS | 9.3AI （D ） | TO- 263AB\n
IRF630NSTRL
元器件型号： IRF630NSTRL
生产厂家： INTERNATIONAL RECTIFIER    INTERNATIONAL RECTIFIER
描述和应用：

TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 9.3A I(D) | TO-263AB
晶体管| MOSFET | N沟道| 200V V（ BR ） DSS | 9.3AI （D ） | TO- 263AB\n

晶体 晶体管 功率场效应晶体管 开关 脉冲 局域网
PDF文件： 总11页 (文件大小：155K)
下载文档：  下载PDF数据表文档文件
型号参数：IRF630NSTRL参数
 查看货源

IRF630NSTRLPBF

 暂无描述

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0 IRF

IRF630NSTRR

 TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 9.3A I(D) | TO-263AB

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35 IRF

IRF630NSTRR

 Power Field-Effect Transistor, 9.3A I(D), 200V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3

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0 IRF

IRF630NSTRRPBF

 Power Field-Effect Transistor, 9.3A I(D), 200V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3

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0 IRF

IRF630NSTRRPBF

 Power Field-Effect Transistor, 9.3A I(D), 200V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3

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0 IRF

IRF630NSTRRPBF

 Power Field-Effect Transistor, 9.3A I(D), 200V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3

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0 INFINEON

IRF630PBF

 HEXFET Power MOSFET ( VDSS = 200V , RDS(on) = 0.40ヘ , ID = 9.0A )

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75 IRF

IRF630PBF

 Power MOSFET

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31 VISHAY

IRF630R

 TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 9A I(D) | TO-220AB

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36 ETC

IRF630R

 9A, 200V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

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0 RENESAS

IRF630S

 N - CHANNEL 200V - 0.35ohm - 9A - D2PAK MESH OVERLAY] MOSFET

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68 STMICROELECTR

IRF630S

 N-channel TrenchMOS transistor

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52 PHILIPS

IRF630S

 Power MOSFET

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41 TRSYS

IRF630S

 Power MOSFET

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19 VISHAY

IRF630S

 Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

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1 MOTOROLA
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