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元器件品牌
IRF630NSRPBF
[IRF]
Advanced Process Technology;
元器件型号：
IRF630NSRPBF
生产厂家：
INTERNATIONAL RECTIFIER
描述和应用：
Advanced Process Technology
PDF文件：
总11页 (文件大小：340K)
下载文档：
下载PDF数据表文档文件
型号参数：IRF630NSRPBF参数
查看货源
IRF630NSS62Z
Power Field-Effect Transistor, 9.3A I(D), 200V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
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156
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0
FAIRCHILD
IRF630NSTRL
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 9.3A I(D) | TO-263AB
Warning
: Undefined variable $rtag in
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63
IRF
IRF630NSTRL
Power Field-Effect Transistor, 9.3A I(D), 200V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3
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156
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0
IRF
IRF630NSTRLPBF
暂无描述
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156
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0
IRF
IRF630NSTRR
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 9.3A I(D) | TO-263AB
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35
IRF
IRF630NSTRR
Power Field-Effect Transistor, 9.3A I(D), 200V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3
Warning
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156
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0
IRF
IRF630NSTRRPBF
Power Field-Effect Transistor, 9.3A I(D), 200V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3
Warning
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156
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0
IRF
IRF630NSTRRPBF
Power Field-Effect Transistor, 9.3A I(D), 200V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3
Warning
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on line
156
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0
IRF
IRF630NSTRRPBF
Power Field-Effect Transistor, 9.3A I(D), 200V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3
Warning
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on line
156
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0
INFINEON
IRF630PBF
HEXFET Power MOSFET ( VDSS = 200V , RDS(on) = 0.40ヘ , ID = 9.0A )
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75
IRF
IRF630PBF
Power MOSFET
Warning
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156
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31
VISHAY
IRF630R
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 9A I(D) | TO-220AB
Warning
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on line
156
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36
ETC
IRF630R
9A, 200V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Warning
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on line
156
-
0
RENESAS
IRF630S
N - CHANNEL 200V - 0.35ohm - 9A - D2PAK MESH OVERLAY] MOSFET
Warning
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156
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68
STMICROELECTR
IRF630S
N-channel TrenchMOS transistor
Warning
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on line
156
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52
PHILIPS
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