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元器件品牌
IRF6100
[IRF]
HEXFET Power MOSFET; HEXFET功率MOSFET
元器件型号：
IRF6100
生产厂家：
INTERNATIONAL RECTIFIER
描述和应用：
HEXFET Power MOSFET
HEXFET功率MOSFET
PDF文件：
总8页 (文件大小：234K)
下载文档：
下载PDF数据表文档文件
型号参数：IRF6100参数
查看货源
IRF610-001
Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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156
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2
IRF
IRF610-006
Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
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1
VISHAY
IRF610-012
Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
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0
VISHAY
IRF610-015
Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
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0
VISHAY
IRF610-018PBF
Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
Warning
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/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
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156
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1
VISHAY
IRF610-019PBF
Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
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0
VISHAY
IRF610-024
Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
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0
VISHAY
IRF610-024PBF
Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
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0
VISHAY
IRF610-029
Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
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0
VISHAY
IRF610-029PBF
Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
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1
VISHAY
IRF6100PBF
HEXFET Power MOSFET
Warning
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/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
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63
IRF
IRF610-613
N-Channel Power MOSFETs, 3.5A, 150-200V
Warning
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/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
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62
FAIRCHILD
IRF610A
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 3.3A I(D) | TO-220AB
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
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117
ETC
IRF610A
Advanced Power MOSFET
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
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81
FAIRCHILD
IRF610A
2.5A, 200V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
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1
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