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元器件品牌
IRF5Y540CM_15
[IRF]
Avalanche Energy Ratings;
元器件型号：
IRF5Y540CM_15
生产厂家：
INTERNATIONAL RECTIFIER
描述和应用：
Avalanche Energy Ratings
PDF文件：
总7页 (文件大小：101K)
下载文档：
下载PDF数据表文档文件
型号参数：IRF5Y540CM_15参数
查看货源
IRF5Y6215CM
POWER MOSFET P-CHANNEL(Vdss=-150V, Rds(on)=0.29ohm, Id=-11A)
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36
IRF
IRF5Y6215CMPBF
Power Field-Effect Transistor, 11A I(D), 150V, 0.29ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED PACKAGE-3
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0
IRF
IRF5Y9540CM
POWER MOSFET P-CHANNEL(Vdss=-100V, Rds(on)=0.117ohm, Id=-18A)
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45
IRF
IRF5YZ48CM
POWER MOSFET N-CHANNEL(Vdss=55V, Rds(on)=0.029ohm, Id=18A*)
Warning
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27
IRF
IRF60DM206
Brushed motor drive applications
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156
-
0
IRF
IRF60DM206_15
Brushed motor drive applications
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156
-
0
IRF
IRF60R217
Power Field-Effect Transistor, 58A I(D), 60V, 0.0099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3/2
Warning
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156
-
0
INFINEON
IRF610
3.3A, 200V, 1.500 Ohm, N-Channel Power MOSFET
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156
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1327
INTERSIL
IRF610
N-Channel Power MOSFETs, 3.5A, 150-200V
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156
-
574
FAIRCHILD
IRF610
Power MOSFET
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on line
156
-
482
VISHAY
IRF610
Power Field-Effect Transistor, 3.3A I(D), 200V, 1.58ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Warning
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11
SAMSUNG
IRF610
Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Warning
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156
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52
FAIRCHILD
IRF6100
HEXFET Power MOSFET
Warning
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156
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242
IRF
IRF6100
HEXFET Power MOSFET
Warning
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156
-
56
IRF
IRF610-001
Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Warning
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156
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2
IRF
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