IR51HD737 [INFINEON]
SELF-OSCILLATING HALF-BRIDGE; 自振荡半桥
| 型号： | IR51HD737 |
| 厂家： | 
Infineon |
| 描述： | SELF-OSCILLATING HALF-BRIDGE |
| 文件： | 总6页 (文件大小：153K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Data Sheet No. PD-6.057D
IR51HD737
SELF-OSCILLATING HALF-BRIDGE
Features
Product Summary
Output Power MOSFETs in half-bridge configuration
300V Rated Breakdown Voltage
High side gate drive designed for bootstrap operation
Bootstrap diode integrated into package
Accurate timing control for both Power MOSFETs
Matched delay to get 50% duty cycle
V (max)
300V
50%
IN
Duty Cycle
Deadtime
1.2µs
0.75Ω
2.0W
Matched deadtime of 1.2us
Internal oscillator with programmable frequency
R
DS(on)
1
f =
P (T = 25
)
ºC
D
A
1 4
.
RT
75
CT
Ω) ×
× (
+
Zener clamped Vcc for offline operation
Half-bridge output is out of phase with RT
Package
Description
The IR51HD737 is a high voltage, high speed, self-
oscillating half-bridge. Proprietary HVIC and latch
immune CMOS technologies, along with the
®
HEXFET
power MOSFET technology, enable
IR51HD737
9506
ruggedized single package construction. The front-end
features a programmable oscillator which functions
similar to the CMOS 555 timer. The supply to the
control circuit has a zener clamp to simplify offline
operation. The output features two HEXFETs in a
half-bridge configuration with an internally set
deadtime designed for minimum cross-conduction in
the half-bridge. Propagation delays for the high and
low side power MOSFETs are matched to simplify use
in 50% duty cycle applications. The device can
operate up to 300 volts.
Typical Connection
U
P
T
O
3
0
0
V
D
C
B U S
V
I N
I R
5
1
H
D
7
3
7
1
2
3
4
6
9
7
V
V
C
C
B
R
V
I N
T
R
T
C
V
O
T
C
T
T
O
L O A D
C
O
M
C
O M
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IR51HD737
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All
voltage parameters are absolute voltages referenced to COM, all currents are defined positive into any lead.
The Thermal Resistance and Power Dissipation ratings are measured under board mounted and still air
conditions.
Parameter
Symbol
VIN
VB
Definition
Min.
-0.3
-0.3
-0.3
-0.3
-0.3
---
Max.
300
325
Units
V
High Voltage Supply
High Side Floating Supply Absolute Voltage
Half-Bridge Output Voltage
RT Voltage
VO
VRT
VCT
ICC
VIN + 0.3
VCC + 0.3
VCC + 0.3
25
CT Voltage
Supply Current (Note 1)
mA
IRT
RT Output Current
-5
5
dv/dt
PD
Peak Diode Recovery dv/dt
Package Power Dissipation @ TA ≤ +25ºC
Thermal Resistance, Junction to Ambient
Junction Temperature
---
3.4
V/ns
W
---
2.00
RθJA
TJ
---
60
ºC/W
-55
-55
---
150
TS
Storage Temperature
150
ºC
TL
Lead Temperature (Soldering, 10 seconds)
300
Recommended Operating Conditions
The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used
within the recommended conditions.
Parameter
Symbol
VB
VIN
Definition
High Side Floating Supply Absolute Voltage
High Voltage Supply
Min.
VO + 10
---
Max.
VO + VCLAMP
Units
300
300
1.3
0.8
5
V
A
VO
Half-Bridge Output Voltage
-5
ID
Continuous Drain Current
---
(TA = 25ºC)
(TA = 85ºC)
---
ICC
TA
Supply Current (Note 1)
Ambient Temperature
---
mA
ºC
-40
125
Note 1: Because of the IR51H737's application specificity toward off-line supply systems, this IC contains a
zener clamp structure between the chip VCC and COM which has a nominal breakdown voltage of
15.6V. Therefore, the IC supply voltage is normally derived by current feeding the VCC lead
(typically by means of a high value resistor connected between the chip VCC and the rectified line
voltage and a local decoupling capacitor from VCC to COM) and allowing the internal zener clamp
circuit to determine the nominal supply voltage. Therefore, this circuit should not be driven by a DC,
low impedance power source of greater than VCLAMP
.
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IR51HD737
Dynamic Electrical Characteristics
VBIAS (VCC, VB) = 12V unless otherwise specified.
Parameter
TA = 25ºC
Min. Typ. Max. Units Test Conditions
Symbol
Definition
trr
Qrr
Reverse Recovery Time (MOSFET Body Diode)
Reverse Recovery Charge (MOSFET Body Diode)
---
---
---
320
1.5
1.2
---
---
---
ns
µC
µs
IF = 1.3 A
di/dt = 100A/µs
DT
Deadtime, LS Turn-Off to HS Turn-On &
HS Turn-Off to LS Turn-On
D
RT Duty Cycle
---
50
---
%
fOSC = 20 kHz
Static Electrical Characteristics
VBIAS (VCC, VB) = 12V unless otherwise specified.
Parameter
TA = 25ºC
Min. Typ. Max. Units
Symbol
Definition
Test Conditions
Supply Characteristics
VCCUV
VCCUV
IQCC
+
VCC Supply Undervoltage Positive Going
Threshold
VCC Supply Undervoltage Negative Going
Threshold
---
---
8.4
8.0
---
---
V
-
Quiescent VCC Supply Current
---
---
300
---
---
µA
V
VCLAMP VCC Zener Shunt Clamp Voltage
15.6
ICC = 5 mA
Floating Supply Characteristics
IQBS
IOS
Quiescent VBS Supply Current
Offset Supply Leakage Current---
---
30
V
---
µA
---
50
B = VIN = 300V
Oscillator I/O Characteristics
fOSC
Oscillator Frequency
---
---
20
---
---
RT = 35.7 kΩ,
CT = 1 nF
RT = 7.04 kΩ,
CT = 1 nF
kHz
µA
100
ICT
CT Input Current
--- 0.001 1.0
---
---
VCTUV
CT Undervoltage Lockout
---
100
2.5V < V
---
CC < VCCUV
IRT = -100 µA
IRT = -1 mA
+
VRT
VRT
+
RT High Level Output Voltage, VCC - RT
20
200
20
---
---
---
---
---
---
---
---
---
---
---
---
mV
-
RT Low Level Output Voltage
IRT = 100 µA
200
100
8.0
4.0
IRT = 1 mA
VRTUV
RT Undervoltage Lockout, VCC - RT
2/3 VCC Threshold
2.5V < VCC < VCCUV
+
VCT
VCT
+
V
-
1/3 VCC Threshold
Output Characteristics
RDS(on) Static Drain-to-Source On-Resistance
---
0.75
---
ID = 800mA
T= 150 ºC
Ω
V
VSD
Diode Forward Voltage
---
0.8
---
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IR51HD737
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Functional Block Diagram
VB
+
V
6
9
1
IRFC737LC
VCC
2
7
RT
IR2151
VO
3
IRFC737LC
CT
4
COM
Lead Definitions
Lead
Description
Symbol
VCC
Logic and internal gate drive supply voltage. An internal zener clamp diode at 15.6 V nominal is
included to allow the Vcc to be current fed directly from VIN typically by means of a high value
resistor.
RT
CT
Oscillator timing resistor input; a resistor is connected from RT to CT. RT is out of phase with
the half-bridge output (VO).
Oscillator timing capacitor output; a capacitor is connected from CT to COM in order to program
the oscillator frequency according to the following equation:
1
f =
1.4 × (RT + 75Ω) × CT
where 75Ω is the effective impedance of the RT output stage.
High side gate drive floating supply. For bootstrap operation a high voltage fast recovery diode is
needed to feed from VCC to VB.
VB
VIN
High voltage supply.
VO
Half-bridge output.
COM
Logic and low side of half-bridge return.
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IR51HD737
Lead Assignments
1
2
3
4
6
7
9
VCC
RT CT COM
VB V0
V
IN
9 Lead SIP w/o Leads 5 & 8
IR51HD737
RT
VCCUV
+
VCLAMP
50%
90%
50%
VCC
RT
HIGH
SIDE
CT
10%
DT
+
90%
V
LOW
SIDE
VO
0
10%
Figure 1. Input/Output Timing Diagram
Figure 2. Deadtime Waveform Definitions
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IR51HD737
Package Outline
WORLD HEADQUARTERS: 233 Ka nsa s St., El Se g und o, Ca lifornia 90245, Te l: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Gre e n, Oxte d , Surre y RH8 9BB, UK Te l: ++ 44 1883 732020
IR CANADA: 7321 Vic toria Pa rk Ave ., Suite 201, Ma rkha m , Onta rio L3R 2Z8, Te l: (905) 475 1897
IR GERMANY: Sa a lb urg stra sse 157, 61350 Ba d Hom b urg Te l: ++ 49 6172 96590
IR ITALY: Via Lig uria 49, 10071 Borg a ro, Torino Te l: ++ 39 11 451 0111
IR FAR EAST: 171 (K&H Bld g .), 30-4 Nishi-ike b ukuro 3-Chom e , Toshim a -ku, Tokyo Ja p a n Te l: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outra m Roa d , #10-02 Ta n Boon Lia t Build ing , Sing a p ore 0316 Te l: 65 221 8371
http :/ / www.irf.c om
Sales Offices, Agents and Distributors in Major Cities Throughout the World.
© 1996 International Rectifier Printed in U.S.A. 3-96
Data and specifications subject to change without notice.
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