IR2137 [INFINEON]

IGBT Protection in AC or BLDC Motor Drives; IGBT保护交流或直流无刷电机驱动器
IR2137
型号: IR2137
厂家: Infineon    Infineon
描述:

IGBT Protection in AC or BLDC Motor Drives
IGBT保护交流或直流无刷电机驱动器

驱动器 电机 双极性晶体管
文件: 总9页 (文件大小:89K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
International Rectifier 233 Kansas Street, El Segundo, CA 90245 USA  
IGBT Protection in AC or BLDC Motor Drives  
byToshioTakahashi  
The new IR2137 IGBT Gate Driver IC integrates Ground Fault and Over-Current Protection  
with Soft Shutdown, thus providing a compact and comprehensive IGBT protection scheme.  
1. INTRODUCTION  
In the last decade, industrial AC drives have become more advanced in performance and more  
compact in size. This is largely due to the rapid development of power silicon technology, including  
the enhancement of IGBTs and of High Voltage Integrated Circuits. Additionally, this technological  
growth has been particularly accelerated for low horsepower (< 5 Hp) AC Drives. Yet the ground fault  
protection, a feature sought increasingly in motor drives of all power levels, is available widely only in  
the high-end models due to the sensors and other circuitry involved. The market, however, continues  
to demand a fully protected, yet inexpensive, system. To meet this demand, International Rectifier  
has introduced the IR2137: a new generation 3-phase IGBT gate driver, featuring full IGBT protec-  
tion and advanced soft shutdown features.  
To understand traditional methods of IGBT protection, read Section 2. To understand the working of  
the IR2137 skip to Section 3.  
2.TRADITIONAL METHODS OF IGBT PROTECTION  
2-1 Background Theory for Protecting Against Failure  
One of the most common, and fatal, AC drive faults for IGBTs is the Over-Current condition. Table 1  
outlines the causes for the three most common Over-Current modes.  
Over-Current Mode  
Potential Causes  
Line-to-Line Short  
Mis-wiring, Motor leads shorting, Motor phase-to-phase  
insulation breaking down  
Ground Fault  
Motor phase-to-phase insulation breaking down  
Shoot Through  
False IGBT turn-on  
Table 1: Potential Causes of Over-Current  
www.irf.com  
1
In order to protect IGBT devices effectively during an Over-Current condition, one needs to focus on  
two factors.  
First, one needs to detect the type of Over-Current mode and shut the system down. In both Line-to-  
Line and Shoot Through mode, the short-circuit current flows from and to the DC bus capacitors  
(Figures 1 and 3). Therefore, a shunt resistor in the ground path can detect these Over-Current  
conditions. However in the Ground Fault mode, the current flows from the AC line input, through the  
positive DC bus and high side IGBT, to the earth ground (Figure 2). Therefore, the Ground Fault  
condition has to be detected either with a shunt resistor on the positive bus line or by detecting the  
current in the output lines.  
Second, one needs to look at the AC drive architecture.Protection circuitry needs to be built in a manner  
that does not disrupt the drive system. For instance, Figure 4 shows a typical Floating Ground Refer-  
ence Architecture in which the micro-controller (µC) is on the Floating Ground reference.Therefore, any  
Over-Current detection circuit needs to be isolated. Alternate architecture may require reduced or no  
isolation.  
2-2 Traditional Methods of Over-Current Detection  
Method 1  
One can detect the Line-to-Line Short and Shoot Through currents by inserting a Hall Effect sensor  
or a linear opto isolator across the shunt resistor. The device should be in series with the negative  
DC bus line. For Ground Fault protection, an additional Hall Effect leakage current sensor could be  
placed either on the AC line input or on the DC bus. The protection circuit is then implemented by  
using fast comparators. The output of these comparators is ‘OR’d with the micro-controller or PWM  
generator to initiate the shutdown of the gate signals.  
Method 2  
If located in the motor phase output, each Hall Effect sensor uses 2 comparators. This is done  
because both positive and negative current polarities flow during a Line-to-Line Short condition.  
Another important consideration is the total propagation delay for shutdown. The delay time associ-  
ated with the optical isolators in the gate drive and the Hall Effect sensor is typically more than 2  
microseconds. Therefore, regardless of protection circuitry implementation, this delay should be  
added to the circuit delay, before matching it with the IGBT short circuit duration time. As shown in  
Figure 4, the configuration requires 2 Hall Effect sensors and/or opto isolators in addition to the  
protection circuit. The protection circuitry comprises of comparators (2), voltage references, capaci-  
tors, and resistors.  
Method 3  
Another protection method is to use an IGBT de-saturation circuit. This discrete circuit can be con-  
structed in the secondary side of the opto gate driver. (Opto isolated devices with in-built de-satura-  
tion circuits can also be found in the market). This circuit detects voltage build-up across the collec-  
tor and emitter while the device is fully on. If the voltage exceeds a specified limit, the associated  
gate signal is shut off. A discrete circuit would require a comparator with voltage reference, a high  
voltage diode, and various resistors and capacitors.  
2
www.irf.com  
2-3 Traditional Methods of Over-Current Shutdown  
For shutting down an IGBT when an Over-Current condition is detected, a soft turn-off is preferred  
because it reduces a high voltage spike across the collector and emitter of the IGBT device at fault.  
Thus it provides a wider margin for the RBSOA limit during a short-circuit condition, allowing the  
snubber circuit to be significantly minimized or even eliminated. When implemented in the discrete  
circuit based on the floating ground reference architecture, a soft turn-off circuit can get very com-  
plex. Each IGBT gate drive circuit requires an additional fast opto isolator and soft turn-off circuit with  
the dedicated totem pole buffer transistors. Given circuit costs and complexities, a snubber circuit is  
preferred to the discrete soft shutdown circuit. For low Hp devices, the snubber circuit can be imple-  
mented with a high frequency type capacitor across the DC bus, near the IGBTs.  
2-4 Problems with the Traditional Method  
A. Circuit Control Problems  
In a soft shutdown scheme, simultaneous shutdown of all 6 IGBTs is required to prevent a potential  
false turn-on while the IGBTs are in the soft shutdown mode. If a high side IGBT is turned off softly  
while the other IGBTs are in the middle of a switching transition within a PWM period, that IGBT can  
unintentionally be turned back on. It is extremely difficult to synchronize simultaneous shutdown  
using traditional architecture.  
B. Part Count, Size, and Cost Problems  
If the system requires full IGBT protection, including Ground Fault protection, and if it is based on the  
floating ground reference architecture, then the gate drive and protection circuit require the following  
major components (even without the soft shutdown feature):  
6 fast opto isolators  
2 fast Hall Effect sensors or fast linear opto isolators  
2 comparators  
4 floating 15V power supplies  
Hall Effect sensors and opto isolators are relatively large and bulky, and require a lot more space  
than a monolithic IC. In addition, if the system requires a soft shutdown function, 6 additional opto  
isolators and 6 buffer circuits (with a provision for soft turn off capability) are required. Thus, whereas  
low Hp AC drive systems are today moving toward smaller sizes, the above solutions provide neither  
the simplicity nor the integration of the gate drive and protection circuitry that is needed.  
The total cost, including assembly of the inverter system, is large due to the large number and  
bulkiness of components. Furthermore, components such as the Hall Effect sensors are still subject  
to manual assembly.  
To circumvent these issues, a small, integrated IC device that is capable of performing all the above  
functions is a necessity.  
www.irf.com  
3
IR2137: 3-PHASE GATE DRIVER WITH INTEGRATED IGBT PROTECTION  
International Rectifier has now introduced the IR2137 to the AC drives market. This latest High  
Voltage Integrated Circuit provides a monolithic solution to driving all six IGBT gate drivers, while  
simultaneously providing full IGBT protection and soft shutdown. In contrast to the Floating Ground  
Reference architecture discussed in the previous section, the IR2137 circuit enables a simple struc-  
ture. The differences between the two architectures are summarized in Table 2.  
Floating Ground System  
Six Fast Optical Isolators  
Two Hall Effect sensors and  
Two comparators  
IR2137 solution  
IR2137  
Gate Drive  
IGBT Protection  
IR2137 integrated function with a  
shunt resistor and a comparator  
Eliminated (boot strap power)  
Four floating power supplies  
Additional Circuits  
Snubber circuit or discrete soft Eliminated by integrated soft shutdown  
shutdown circuits  
function  
Brake IGBT drive circuit with  
an optical isolator  
Eliminated by integrated brake IGBT  
driver circuit  
Table 2: Solution Comparison of Gate Drive and IGBT Protection  
For the IR2137 circuit, as shown in Figure 5, the IR2137 and a micro-controller (µC) share the same  
ground potential – the negative DC bus potential. (This architecture is already the industry standard  
in the micro AC inverter drive segment). Unlike its traditional counterpart, the IR2137 circuit requires  
a single shunt resistor and associated comparator. With this, it can perform all modes of IGBT short  
circuit protection.  
Additionally, the IR2137 contains IGBT de-saturation logic in the circuit of each high-side gate drive,  
as shown in figures 6 and 7. In the event of a Ground Fault condition, the DESAT pin is activated, and  
the fault signal is transferred to the low side fault logic circuit. The low side fault logic then initiates the  
simultaneous soft shutdown of all 6 IGBTs. When the soft shutdown signal is transferred back to the  
high side, the active PMOS/NMOS transistor buffer goes into a high impedance mode and another  
weak NMOS transistor becomes active to slowly drive the gate pin low. The shutdown softness can  
be programmed by adding an external resistor to the SSD pin – thus allowing the user to optimize  
softness for the specific gate charge of the IGBT. To eliminate the dv/dt induced false triggering of the  
DESAT pin, there is a blanking filter delay of 2 microseconds at each high-side gate turn-on transi-  
tion.  
Figure 8 shows the oscillogram of the ground fault protection feature in the IR2137. In this measure-  
ment, a size 4 IGBT, IRG4BC40KD, was used in conjunction with a turn-on resistor, Rg = 33, turn-  
off resistor, Rg = 16, and soft turn off resistor, RSSD = 500. The top trace in Figure 8 is the IGBT  
gate signal (10V/div), while the middle trace is the VCE voltage (100V/div), and the bottom trace is the  
IGBT short circuit current (40A/div). No snubber circuit was used for this test. One can see that the  
de-saturation protection activates quickly and the soft shutdown feature virtually eliminates the over-  
shoot voltage across the collector and the emitter.  
4
www.irf.com  
For contrast, the oscillogram of ahardshutdown is shown in Figure 9. The same IGBT, IRG4BC40KD,  
and the same PCB pattern were used as in the example shown in Figure 8. The top trace is the IGBT  
short circuit current and the bottom trace is the IGBT V voltage (100V/div). As can be seen in  
CE  
Figure 9, the overshoot voltage reaches approximately 100V above the normal V voltage during  
CE  
the turn-off transition.  
In summary, the IR2137, a monolithic IC, provides excellent protection and soft shutdown features in  
an extremely compact and cost-effective package.  
Motor  
Figure 1: Current Flow during Line-to-Line Short  
Motor  
Figure 2: Current Flow during Ground Fault  
www.irf.com  
5
Motor  
Figure 3: Current Flow during Shoot Through Mode  
M otor  
O P TO  
O P TO  
O P TO  
O P TO  
O P TO  
O P TO  
uP  
Figure 4: Overcurrent Protection in Floating Ground Reference System  
6
www.irf.com  
M otor  
IR2137  
3Phase G ate  
Driver with  
IGBT  
uP  
or  
DSP  
protection  
Figure 5: IR2137 Gate Driver with IGBT Overcurrent Protection  
VB  
HO P  
High Side G ate  
LO P  
SSD  
2 us ec  
Blan king  
DE SAT  
Desat Fault  
3 50 ns ec  
Filter  
VS  
Soft Shutdow n  
Soft Shutdow n  
Im pedence =  
500 ohm s  
Figure 6: IR2137 High Side Circuit  
www.irf.com  
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VB1  
LATCH  
HOP1  
H IN 1  
SOFT SHUTDOW N  
DESAT  
SCHMITT  
TRIGGER INPUT  
&
SHOOT  
THROUGH  
PREVENTION  
SOFT  
SHUTDOW N  
D RIV ER  
HIN1  
LIN1  
SOFT  
SHUTDOW N  
HON1  
200nsec  
D eadtim e  
LEV E L  
SH IFTE RS  
DESAT  
DETECTION  
HSSD1  
VS1  
UV DETECT  
DESAT1  
VB2  
LATCH  
H IN 2  
HOP2  
HON2  
SCHMITT  
TRIGGER  
HIN2  
LIN2  
SOFT  
SHUTDOW N  
D RIV ER  
SOFT  
SHUTDOW N  
SOFT SHUTDOW N  
200nsec  
D eadtim e  
LEV E L  
SH IFTE RS  
INPUT  
&
SHOOT  
THROUGH  
PREVENTION  
DESAT  
DETECTION  
HSSD2  
VS2  
DESAT  
UV DETECT  
DESAT2  
VB3  
LATCH  
H IN 3  
HOP3  
HON3  
HSSD3  
VS3  
SCHMITT  
TRIGGER INPUT  
&
SHOOT  
THROUGH  
PREVENTION  
SOFT  
SHUTDOW N  
HIN3  
LIN3  
SOFT  
SHUTDOW N  
D RIV ER  
SOFT SHUTDOW N  
200nsec  
D eadtim e  
LEV E L  
SH IFTE RS  
DESAT  
DETECTION  
DESAT  
UV DETECT  
DESAT3  
LOP1  
D RIV ER  
SOFT SHUTDOW N  
LON1  
LSSD1  
LS1  
SCHMITT  
TRIGGER  
SD  
LOP2  
D RIV ER  
LON2  
LS2  
SCHMITT  
TRIGGER  
ITRIP  
LSSD2  
F AUL T  
LO G IC  
SCHMITT  
TRIGGER  
FLTCLR  
LOP3  
LON3  
D RIV ER  
FAULT  
VCC  
LS3  
LSSD3  
BRIN  
U V  
D ETE CT  
VSS  
B R AK E  
D RIV ER  
BR  
COM  
Figure 7: IR2137 Block Diagram  
8
www.irf.com  
Figure 8:  
IR2137 Soft Shutdown  
Figure 9:  
Hard Shutdown  
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105  
IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 0BL, United Kingdom  
Tel: ++44 (0) 20 8645 8000  
Data and specifications subject to change without notice. 2/28/2000  
www.irf.com  
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