IR180LM12CS05CBPBF [INFINEON]
Rectifier Diode, 1 Phase, 1 Element, 1200V V(RRM), Silicon, WAFER;
| 型号： | IR180LM12CS05CBPBF |
| 厂家： | 
Infineon |
| 描述： | Rectifier Diode, 1 Phase, 1 Element, 1200V V(RRM), Silicon, WAFER 快速恢复二极管 |
| 文件： | 总3页 (文件大小：109K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin I0125J 07/97
IR180LM..CS05CB SERIES
FAST RECOVERY DIODES
Junction Size:
Wafer Size:
Square 180 mils
4"
VRRM Class:
1000 and 1200 V
Passivation Process:
Glassivated MOAT
Reference IR Packaged Part: 20ETF Series
Major Ratings and Characteristics
Parameters
Units
TestConditions
VFM
MaximumForwardVoltage
1350mV
TJ =25°C, IF = 20 A
VRRM ReverseBreakdownVoltageRange
1000and1200V TJ = 25°C, IRRM = 100 µA
(1)
(1)Nitrogen flow on die edge.
Mechanical Characteristics
NominalBackMetalComposition,Thickness
Cr-Ni-Ag(1KA-4KA-6KA)
100%Al,(20µm)
NominalFrontMetalComposition,Thickness
ChipDimensions
180 x 180 mils (4.57x4.57 mm) - see drawing
100 mm, with std. < 110 > flat
260µm
WaferDiameter
WaferThickness
MaximumWidthofSawingLine
RejectInkDotSize
45µm
0.25mmdiameterminimum
Seedrawing
InkDotLocation
RecommendedStorageEnvironment
Storageinoriginalcontainer,indessicated
nitrogen,withnocontamination
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1
IR180LM..CS05CB Series
Bulletin I0125J 07/97
Ordering Information Table
Device Code
IR 180
L
M
12
C
S05 CB
3
1
2
4
5
6
7
8
1
2
3
4
5
6
7
8
-
-
-
-
-
-
-
-
International Rectifier Device
Chip Dimension in Mils
Type of Device: L = Wire Bondable Fast Recovery Diode
Passivation Process: M = Glassivated MOAT
Voltage code: Code x 100 = VRRM
Available Class
10 = 1000 V
12 = 1200 V
Metallization: C = Aluminium (Anode) - Silver (Cathode)
Fast Recovery Type: S05 = 500 nsec
CB = Probed Uncut Die (wafer in box)
None = Probed Die in chip carrier
Outline Table
All dimensions are in microns
2
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IR180LM..CS05CB Series
Bulletin I0125J 07/97
Wafer Layout
TOP VIEW
N° 293 Basic Cells
All dimensions are in millimeters
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