30ETH06STRRPBF [INFINEON]

Hyperfast Rectifier; 超快整流器
30ETH06STRRPBF
型号: 30ETH06STRRPBF
厂家: Infineon    Infineon
描述:

Hyperfast Rectifier
超快整流器

整流二极管 软恢复二极管 超快速软恢复二极管
文件: 总8页 (文件大小:288K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Bulletin PD-21064 rev. B 11/06  
30ETH06SPbF  
30ETH06-1PbF  
Hyperfast Rectifier  
Features  
Hyperfastfast Recovery Time  
Low Forward Voltage Drop  
Low Leakage Current  
125°COperatingJunctionTemperature  
Dual Diode Center Tap  
trr = 28ns typ.  
IF(AV) = 30Amp  
VR = 600V  
Lead-Free ("PbF" suffix)  
Description/Applications  
State of the art Hyperfast recovery rectifiers designed with optimized performance of forward voltage drop, Hyperfast  
recover time, and soft recovery.  
The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness  
and reliability characteristics.  
These devices are intended for use in PFC Boost stage in the AC-DC section of SMPS, inverters or as freewheeling  
diodes.  
The IR extremely optimized stored charge and low recovery current minimize the switching losses and reduce over  
dissipation in the switching element and snubbers.  
Absolute Maximum Ratings  
Parameters  
Max  
600  
30  
Units  
VRRM  
IF(AV)  
IFSM  
TJ  
Peak Repetitive Reverse Voltage  
Average Rectifier Forward Current  
V
A
@ TC = 103°C  
@ TJ = 25°C  
NonRepetitivePeakSurgeCurrent  
OperatingJunction Temperature  
Operating StorageTemperature  
200  
- 65 to 125  
- 65 to 150  
°C  
TSTG  
Case Styles  
30ETH06-1PbF  
30ETH06SPbF  
Base  
Cathode  
2
2
1
3
3
1
N/C  
Anode  
Anode  
N/C  
D2PAK  
TO-262  
www.irf.com  
1
30ETH06SPbF, 30ETH06-1PbF  
Bulletin PD-21064 rev. B 11/06  
Electrical Characteristics @ T = 25°C (unless otherwise specified)  
J
Parameters  
Min Typ Max Units Test Conditions  
VBR, Vr Breakdown Voltage,  
Blocking Voltage  
600  
-
-
V
IR = 100μA  
VF  
Forward Voltage  
-
-
-
-
-
-
2.0 2.6  
V
V
IF = 30A, TJ = 25°C  
1.34 1.75  
IF = 30A, TJ = 150°C  
IR  
Reverse Leakage Current  
0.3  
50  
μA  
VR = VR Rated  
60 500 μA  
TJ = 150°C, VR = VR Rated  
VR = 600V  
CT  
LS  
Junction Capacitance  
Series Inductance  
33  
-
-
pF  
nH  
8.0  
Measured lead to lead 5mm from package body  
Dynamic Recovery Characteristics @ T = 25°C (unless otherwise specified)  
J
Parameters  
Min Typ Max Units Test Conditions  
trr  
Reverse Recovery Time  
-
-
28  
31  
35  
-
ns  
IF = 1.0A, diF/dt = 50A/μs, VR = 30V  
TJ = 25°C  
TJ = 125°C  
TJ = 25°C  
TJ = 125°C  
TJ = 25°C  
TJ = 125°C  
IF = 30A  
VR = 200V  
diF /dt = 200A/μs  
77  
-
IRRM  
Peak Recovery Current  
-
-
-
-
3.5  
7.7  
65  
-
A
-
Qrr  
Reverse Recovery Charge  
-
nC  
345  
-
Thermal - Mechanical Characteristics  
Parameters  
Min  
Typ  
Max  
125  
150  
1.1  
70  
-
Units  
TJ  
Max.JunctionTemperatureRange  
Max.StorageTemperatureRange  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
Thermal Resistance, Case to Heatsink  
Weight  
- 65  
-
-
°C  
TStg  
- 65  
RthJC  
RthJA  
RthCS  
PerLeg  
PerLeg  
-
-
0.7  
-
°C/W  
c
d
-
0.2  
2.0  
0.07  
-
-
-
g
-
-
(oz)  
MountingTorque  
MarkingDevice  
6.0  
5.0  
12  
Kg-cm  
-
10  
lbf.in  
30ETH06S  
30ETH06-1  
Case style D2Pak  
Case style TO-262  
c Typical Socket Mount  
d Mounting Surface, Flat, Smooth and Greased  
2
www.irf.com  
30ETH06SPbF, 30ETH06-1PbF  
Bulletin PD-21064 rev. B 11/06  
1000  
100  
10  
1000  
Tj = 175˚C  
150˚C  
100  
10  
125˚C  
100˚C  
25˚C  
1
0.1  
0.01  
0.001  
0.0001  
0
100 200 300 400 500 600  
Reverse Voltage-VR (V)  
Fig.2-Typical Values Of Reverse Current  
Vs. Reverse Voltage  
1000  
100  
10  
T
= 25˚C  
J
T
T
T
= 175˚C  
= 150˚C  
J
J
J
=
25˚C  
1
0
0.5  
1
1.5  
2
2.5  
3
3.5  
0
100 200 300 400 500 600  
Forward Voltage Drop-VFM (V)  
Reverse Voltage-VR (V)  
Fig.3-Typical Junction Capacitance  
Vs. Reverse Voltage  
Fig.1-Typical Forward Voltage Drop Characteristics  
10  
D = 0.50  
D = 0.20  
D = 0.10  
D = 0.05  
D = 0.02  
D = 0.01  
1
0.1  
P
DM  
t
1
t
2
Single Pulse  
(Thermal Resistance)  
Notes:  
0.01  
1. Duty factor D = t1/ t2  
2. Peak Tj = Pdm x ZthJC + Tc  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
t1,Rectangular Pulse Duration (Seconds)  
Fig.4-Max. Thermal Impedance ZthJC Characteristics  
www.irf.com  
3
30ETH06SPbF, 30ETH06-1PbF  
Bulletin PD-21064 rev. B 11/06  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
180  
160  
RMS Limit  
DC  
140  
DC  
D = 0.01  
D = 0.02  
D = 0.05  
D = 0.1  
D = 0.2  
D = 0.5  
120  
Square wave (D = 0.50)  
Rated Vr applied  
100  
80  
see note (3)  
0
5
10 15 20 25 30 35 40 45  
0
5
10 15 20 25 30 35 40 45  
Average Forward Current-IF(AV)(A)  
Average Forward Current - IF(AV)(A)  
Fig.5-Max. Allowable CaseTemperature  
Vs. Average Forward Current  
Fig.6-Forward Power Loss Characteristics  
90  
1200  
V R= 200V  
T J = 125˚C  
IF = 30 A  
IF = 15 A  
T J  
= 25˚C  
80  
70  
60  
50  
40  
30  
20  
10  
0
1000  
800  
600  
400  
200  
0
IF = 30 A  
IF = 15 A  
V R = 200V  
T J = 125˚C  
T J  
= 25˚C  
100  
1000  
100  
1000  
di F /dt (A/μs)  
diF/dt (A/μs)  
Fig.8-TypicalStoredCharge vs.diF /dt  
Fig.7-TypicalReverseRecovery vs.di F /dt  
(3) Formulaused:TC =TJ -(Pd+PdREV)xRthJC  
;
Pd=ForwardPowerLoss=IF(AV) xVFM @(IF(AV) /D) (seeFig.6);  
PdREV =InversePowerLoss=VR1 xIR (1-D); IR @VR1=ratedVR  
4
www.irf.com  
30ETH06SPbF, 30ETH06-1PbF  
Bulletin PD-21064 rev. B 11/06  
Reverse Recovery Circuit  
V
= 200V  
R
0.01  
Ω
L = 70µH  
D.U.T.  
D
diF /dt  
dif/dt  
ADJUST  
IRFP250  
G
S
Fig. 9- Reverse Recovery Parameter Test Circuit  
3
t
rr  
I
F
t
t
a
b
0
4
Q
rr  
2
I
0.5  
I
RRM  
RRM  
5
di(rec)M/dt  
0.75 I  
RRM  
1
di /dt  
F
1. di /dt - Rate of change of current through zero  
F
crossing  
4. Qrr - Area under curve defined by t  
rr  
and I  
RRM  
t
x I  
2
rr  
RRM  
Q
=
2. I  
- Peak reverse recovery current  
rr  
RRM  
3. t - Reverse recovery time measured from zero  
5. di  
/ dt - Peak rate of change of  
(rec) M  
current during t portion of t  
rr  
rr  
crossing point of negative going I to point where  
F
b
a line passing through 0.75 I  
extrapolated to zero current  
and 0.50 I  
RRM  
RRM  
Fig. 10 - Reverse Recovery Waveform and Definitions  
www.irf.com  
5
30ETH06SPbF, 30ETH06-1PbF  
Bulletin PD-21064 rev. B 11/06  
Outline Table  
ConformtoJEDECoutlineD2Pak(SMD-220)  
Dimensions in millimeters and (inches)  
Modified JEDEC outline TO-262  
Dimensions in millimeters and (inches)  
6
www.irf.com  
30ETH06SPbF, 30ETH06-1PbF  
Bulletin PD-21064 rev. B 11/06  
Tape & Reel Information  
Dimensionsinmillimetersand(inches)  
Part Marking Information  
D2PAK  
PART NUMBER  
INTERNATIONAL  
RECTIFIER  
THIS IS A 30ETH06S  
LOT CODE 8024  
ASSEMBLED ON WW 02, 2000  
30ETH06S  
LOGO  
DATE CODE  
YEAR 0 = 2000  
WEEK 02  
ASSEMBLY  
LOT CODE  
P = LEAD-FREE  
TO-262  
PART NUMBER  
DATE CODE  
INTERNATIONAL  
RECTIFIER  
LOGO  
THIS IS A 30ETH06-1  
LOT CODE 8024  
ASSEMBLED ON WW 02, 2000  
30ETH06-1  
YEAR 0 = 2000  
WEEK 02  
ASSEMBLY  
LOT CODE  
P = LEAD-FREE  
www.irf.com  
7
30ETH06SPbF, 30ETH06-1PbF  
Bulletin PD-21064 rev. B 11/06  
Ordering Information Table  
Device Code  
30  
E
T
H
06  
S
TRL PbF  
4
1
2
3
5
6
7
8
1
2
3
4
5
6
-
-
-
-
-
-
Current Rating (30 = 30A)  
E
T
H
= Single Diode  
= TO-220, D2Pak  
= HyperFast Recovery  
Voltage Rating (06 = 600V)  
y S = D2Pak  
y -1 = TO-262  
7
6
-
-
y none = Tube (50 pieces)  
y TRL = Tape & Reel (Left Oriented, for D2PAk package)  
y TRR = Tape & Reel (Right Oriented, for D2PAk package)  
y none = Standard Production  
8
y PbF = Lead-Free  
Data and specifications subject to change without notice.  
This product has been designed and qualified for Industrial Level and Lead-Free.  
Qualification Standards can be found on IR's Web site.  
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105  
TAC Fax: (310) 252-7309  
Visit us at www.irf.com for sales contact information. 11/06  
8
www.irf.com  

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