11DQ05TRPBF
更新时间:2024-09-18 18:49:20
品牌:INFINEON
描述:Rectifier Diode, Schottky, 1 Phase, 1 Element, 1.1A, 50V V(RRM), Silicon, DO-204AL, LEAD FREE, PLASTIC, DO-41, 2 PIN
11DQ05TRPBF 概述
Rectifier Diode, Schottky, 1 Phase, 1 Element, 1.1A, 50V V(RRM), Silicon, DO-204AL, LEAD FREE, PLASTIC, DO-41, 2 PIN
11DQ05TRPBF 数据手册
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PDF下载Bulletin PD-2.288 rev. F 11/04
11DQ05
11DQ06
SCHOTTKY RECTIFIER
1.1 Amp
Major Ratings and Characteristics
Description/ Features
The 11DQ.. axial leaded Schottky rectifier has been optimized
for very low forward voltage drop, with moderate leakage.
Typical applications are in switching power supplies, convert-
ers, free-wheeling diodes, and reverse battery protection.
Characteristics
Values
Units
I
Rectangular
waveform
1.1
A
F(AV)
Low profile, axial leaded outline
V
I
50/60
150
V
A
V
RRM
High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
@tp=5µssine
Very low forward voltage drop
High frequency operation
FSM
V
@1Apk, T =125°C
J
0.53
F
J
Guard ring for enhanced ruggedness and long term
reliability
T
range
-40to150
°C
Lead-Free plating
CASE STYLE AND DIMENSIONS
Conform to JEDEC Outline DO-204AL (DO-41)
Dimensions in millimeters and inches
www.irf.com
1
11DQ05, 11DQ06
Bulletin PD-2.288 rev. F 11/04
Voltage Ratings
Part number
11DQ05
11DQ06
VR
Max. DC Reverse Voltage (V)
50
60
V
RWM Max. Working Peak Reverse Voltage (V)
Absolute Maximum Ratings
Parameters
11DQ.. Units
Conditions
IF(AV) Max. Average Forward Current
*SeeFig. 4
1.1
A
50% duty cycle @ TC =84°C, rectangularwaveform
IFSM Max.PeakOneCycleNon-Repetitive
SurgeCurrent *SeeFig. 6
150
25
5µs Sineor3µsRect. pulse
10ms Sine or 6ms Rect. pulse
Following any rated
load condition and with
rated VRRM applied
A
EAS Non-Repetitive Avalanche Energy
2.0
1.0
mJ
A
TJ = 25°C, IAS =1Amps,L=4mH
Current decaying linearly to zero in 1 µsec
FrequencylimitedbyTJ max. VA =1.5xVR typical
IAR
Repetitive Avalanche Current
Electrical Specifications
Parameters
11DQ.. Units Conditions
VFM Max. Forward Voltage Drop
0.58
0.76
0.53
V
V
V
@ 1A
@ 2A
@ 1A
TJ = 25 °C
TJ = 125 °C
* See Fig. 1
(1)
0.64
1.0
11
V
@ 2A
VR = rated VR
IRM Max. Reverse Leakage Current
mA TJ = 25 °C
mA TJ = 125 °C
* See Fig. 2
(1)
CT
LS
Typical Junction Capacitance
Typical Series Inductance
55
8.0
pF
VR = 5VDC (test signal range 100Khz to 1Mhz) 25°C
nH Measured lead to lead 5mm from package body
V/µs (Rated VR)
dv/dt Max. Voltage Rate of Change
(1) Pulse Width < 300µs, Duty Cycle <2%
10000
Thermal-Mechanical Specifications
Parameters
11DQ.. Units Conditions
TJ
Max. Junction Temperature Range (*) -40 to 150 °C
Tstg Max. Storage Temperature Range
-40 to 150 °C
RthJA Max. Thermal Resistance Junction
to Ambient
100
°C/W DC operation
Without cooling fin
RthJL Typical Thermal Resistance Junction
to Lead
81
°C/W DC operation (See Fig. 4)
wt
Approximate Weight
Case Style
0.33(0.012) g (oz.)
DO-204AL(DO-41)
(*) dPtot
dTj
1
<
thermal runaway condition for a diode on its own heatsink
Rth(j-a)
2
www.irf.com
11DQ05, 11DQ06
Bulletin PD-2.288 rev. F 11/04
100
10
T
= 150˚C
125˚C
J
10
1
0.1
0.01
0.001
0.0001
25˚C
0
10 20 30 40 50 60 70
Reverse Voltage - VR(V)
Fig. 2-Typical Values of Reverse Current
Vs. Reverse Voltage
T
T
T
= 150˚C
= 125˚C
J
J
J
1
=
25˚C
100
T
= 25˚C
J
0.1
0
0.2
0.4
0.6
0.8
1
1.2
Forward Voltage Drop-VFM (V)
10
Fig. 1-Maximum Forward Voltage Drop Characteristics
0
10 20 30 40 50 60 70
Reverse Voltage-VR (V)
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
www.irf.com
3
11DQ05, 11DQ06
Bulletin PD-2.288 rev. F 11/04
160
140
120
100
80
0.8
0.6
0.4
0.2
0
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
DC
RMS Limit
DC
Square wave (D = 0.50)
80% Rated Vr applied
60
40
20
0
see note (2)
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6
Average Forward Current - IF(AV) (A)
Average Forward Current - IF(AV) (A)
Fig. 4-Maximum Ambient TemperatureVs. Average Forward
Current, Printed Circuit Board Mounted
Fig. 5-Forward Power Loss Characteristics
1000
At Any Rated Load Condition
And With Rated Vrrm Applied
Following Surge
100
10
10
100
1000
10000
Square Wave Pulse Duration - tp (microsec)
Fig. 6 - Maximum Non-Repetitive Surge Current
(2) Formulaused:TC =TJ -(Pd+PdREV)xRthJC
;
Pd=ForwardPowerLoss=IF(AV) xVFM @(IF(AV) /D) (seeFig.6);
PdREV =InversePowerLoss=VR1 xIR (1-D); IR @VR1=80%ratedVR
4
www.irf.com
11DQ05, 11DQ06
Bulletin PD-2.288 rev. F 11/04
Ordering Information Table
Device Code
11
D
Q
06 TR
1
2
3
4
5
1
2
3
4
5
-
-
-
-
-
11 = 1.1A (Axial and small packages - Current is x10)
D
Q
=
=
DO-41 package
Schottky Q.. Series
06 = 60V
05 = 50V
10 = Voltage Ratings
TR = Tape & Reel package ( 5000 pcs)
-
= Box package (1000 pcs)
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level and Lead-Free.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 11/04
www.irf.com
5
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