X80203 [INTERSIL]

Power Supply Swquencer with Power-up System Mnitoring; 电源Swquencer与电系统Mnitoring
X80203
型号: X80203
厂家: Intersil    Intersil
描述:

Power Supply Swquencer with Power-up System Mnitoring
电源Swquencer与电系统Mnitoring

文件: 总16页 (文件大小:330K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
X80200, X80201, X80202, X80203, X80204  
®
Data Sheet  
January 21, 2005  
FN8154.0  
Power Supply Sequencer with Power-up  
System Monitoring  
The X80200 power sequencer provides a flexible approach  
for handling difficult system power-up conditions. The  
X80200 includes control of up to three voltage supplies and  
can be cascaded to control additional supplies. The device  
contains independent undervoltage lockout for each  
controlled voltage.  
Features  
• Sequence three voltage supplies independently  
- Core and Logic I/O VCC power sequencer for processor  
supplies  
- Power up and power down control  
- Voltage monitors have undervoltage lockout  
- Internal charge pump drives external N-channel FET  
switches  
- Cascadable to sequence more than 3 supplies  
- Time based or voltage based sequencing  
The three voltage control circuits allow sequencing for  
primary, core, and I/O voltages. The core and I/O supplies  
are linked together with a comparator or a timer allowing a  
tight coupling between these two supplies. The sequencing  
may be either voltage based or time based.  
• Status register bits monitor gate output status  
• SMBus compatible Interface  
• Slave address identification for up to 8 power sequencers  
(24 supplies) on the same bus  
The X80200 contains separate charge pumps to control  
external N-channel power FETs for each of the supplies. The  
charge pumps provide the high gate control voltage  
necessary for efficient operation of the FET switches.  
• Surface mount 20-pin TSSOP Package  
Applications  
• Distributed Power Supply Designs  
The X80200 turns on the primary voltage to the system  
when the voltage source is steady. This primary FET switch  
turn-on can be delayed with an external RC circuit. For the  
secondary voltage sources, the device has a built-in “core-  
up-first and core-down-last” sequencing logic which is ideal  
for high performance processors, DSPs and ASICs.  
• Multi-voltage systems  
• Multiprocessor systems  
• Embedded Processor Applications  
• Digital Signal Processors, FPGAs, ASICs, Memory  
Controllers  
The serial bus can be used to monitor the status or turn off  
each of the external power switches. The X80200 has 3  
slave address bits that allow up to 8 devices to be connected  
to the same bus.  
• N + 1 Redundant Power Supplies  
• Support for SSI – Server System Infrastructure  
Specifications  
Pinout  
• -48V Hotswap Power Backplane/Distribution  
• Card Insertion Detection and Power  
• Power Sequencing DC-DC Supplies  
• Databus Power Interfacing  
20 LD TSSOP  
TOP VIEW  
SETV  
REF  
A0  
1
2
3
4
5
6
20  
19  
18  
17  
VDDL  
VDDM  
VDDH  
• Custom Industrial Power Backplanes  
GND  
A1  
VFB  
16  
DNC  
• Other: ATE, Data Acquisition, Mass Storage, Servers,  
Data com, Wireless Basestations  
A2  
GATE_M  
GATE_H  
GATE_L  
ENS  
15  
14  
13  
12  
NC  
7
8
Ordering Information  
SDA  
SCL  
9
PART NUMBER UVLO  
UVLO  
UVLO  
0.9  
PACKAGE  
TSSOP  
TSSOP  
TSSOP  
TSSOP  
TSSOP  
H
M
L
10  
READY  
11  
GATEH_EN  
X80200V20I  
X80201V20I  
X80202V20I  
X80203V20I  
X80204V20I  
4.5  
4.5  
3.0  
3.0  
3.0  
3.0  
2.25  
2.25  
2.25  
0.9  
0.9  
1.7  
0.9  
0.9  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.  
1-888-INTERSIL or 321-724-7143 | Intersil (and design) is a registered trademark of Intersil Americas Inc.  
Copyright Intersil Americas Inc. 2005. All Rights Reserved  
1
All other trademarks mentioned are the property of their respective owners.  
X80200, X80201, X80202, X80203, X80204  
Functional Diagram  
VDDH  
18  
VFB  
17  
DNC  
16  
GATE_M  
15  
GATE_H  
14  
CHARGE  
PUMP_M  
13  
12  
GATE_L  
ENS  
UVLO  
H
OSC  
CHARGE  
PUMP_H  
19  
VDDM  
UVLO  
M
CHARGE  
PUMP_L  
VDDL 20  
UVLO  
L
SETV  
REF  
1
2
+
CORE-UP-FIRST  
11  
10  
GATEH_EN  
READY  
CORE-DOWN-LAST  
2-WIRE  
STATUS REGISTER  
REMOTE SHUTDOWN REGISTER  
A0  
3
INTERFACE  
9
SCL  
4
GND  
5
6
7
8
A1  
A2  
NC  
SDA  
Pin Descriptions  
PIN  
NAME  
DESCRIPTION  
1
SETV  
Set Voltage. This pin is used for voltage based power sequencing of supplies VDDM and VDDL.  
If unused connect to ground.  
2
REF  
Reference voltage. This pin is used for voltage based sequencing. The voltage on this pin is compared to the voltage on the  
VFB pin and provides the threshold for turn on of the GATE_M output. Either a voltage source or external resistor divider can  
be used to provide the reference. If time based sequencing is used this pin should be tied to VDDH.  
3
4
A0  
GND  
A1  
Slave address pin assignment. It has an Internal pull down resistor. (>10Mtypical)  
Voltage Ground.  
5
Slave address pin assignment. It has an Internal pull down resistor. (>10Mtypical)  
Slave Address pin assignment. It has an Internal pull down resistor. (>10Mtypical)  
No internal connections.  
6
A2  
7
NC  
8
SDA  
SCL  
READY  
Serial bus data input/output pin.  
9
Serial bus clock input pin.  
10  
READY Output Pin: This open-drain output pin goes LOW while VDDH is below UVLO and remains LOW for t after  
PURST  
H
VDDH goes above UVLO . READY goes HIGH after t  
.
H
PURST  
11 GATEH_EN GATE_H Enable. When this pin is HIGH and VDDH > UVLO the charge pump of the GATE_H pin turns on and the output  
H
drives HIGH. When this pin is LOW, the charge pump is disabled and the GATE_H output is LOW. An external RC time delay  
can be connected between the enable signal and this pin to delay the GATE_H turn on.  
12  
13  
ENS  
Enable Sequence. This pin is used for time-based power sequencing of supplies VDDM and VDDL. If unused, connect to ground.  
GATE_L  
GATE_L Output: This output is connected to the gate of an (external) Power Switch “L”. The GATE_L pin is driven HIGH when  
charge pump L is enabled and pulled LOW when the charge pump is disabled.  
14  
15  
GATE_H GATE_H Output: This output is connected to the gate of a (external) Power Switch “H”. The GATE_H pin driven HIGH when  
charge pump H is enabled and pulled LOW when the charge pump is disabled.  
GATE_M GATE_M Output: This output is connected to the gate of a (external) Power Switch “M”. The GATE_M pin driven HIGH when  
charge pump M is enabled and pulled LOW when the charge pump is disabled.  
16  
17  
DNC  
VFB  
Do not connect (must be left floating).  
Voltage Feedback Pin. This input pin is used with voltage based power sequencing to monitor the level of a previously turned-  
on supply. If unused, connect to ground.  
18  
19  
20  
VDDH  
VDDM  
VDDL  
Primary supply voltage (typically 5V).  
Monitored Supply Voltage “M” input.  
Monitored Supply Voltage “L” input.  
FN8154.0  
2
X80200, X80201, X80202, X80203, X80204  
Absolute Maximum Ratings  
Recommended Operating Conditions  
Temperature Range. . . . . . . . . . . . . . . . . . . . . . . . . . .-40°C to 85°C  
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . . 300°C  
Temperature under bias. . . . . . . . . . . . . . . . . . . . . .-65°C to +135°C  
Storage temperature . . . . . . . . . . . . . . . . . . . . . . . .-65°C to +150°C  
Voltage on given pin (Power Sequencing Functions):  
All V  
pins . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7V  
DD  
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the  
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.  
Power Sequencing Control Circuits Over the recommended operating conditions unless otherwise specified  
SYMBOL  
PARAMETER  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNIT  
DC CHARACTERISTICS – Undervoltage Lockout Comparators  
V
Supply Operating Range  
Supply Operating Range  
Supply Operating Range  
Supply Current  
3.05  
0.95  
0.95  
5.5  
5.5  
5.5  
V
V
DDH  
V
DDM  
V
V
DDL  
DDH  
DDH  
I
I
V
V
= 5.5V  
= 3.1V  
2.5  
mA  
µA  
DDH  
DDH  
Supply Current  
200  
UVLO  
Undervoltage lockout for VDDH  
H
X80200  
X80201  
X80202  
X80203  
X80204  
4.425  
4.425  
2.95  
4.5  
4.5  
3.0  
3.0  
3.0  
4.575  
4.575  
3.05  
V
V
V
V
V
2.95  
3.05  
2.95  
3.05  
UVLO  
Undervoltage lockout for VDDM  
Undervoltage lockout for VDDL  
M
X80200  
X80201  
X80202  
X80203  
X80204  
2.2  
2.2  
3.0  
2.25  
2.25  
2.25  
0.9  
3.05  
2.3  
V
V
V
V
V
2.2  
2.3  
2.2  
2.3  
0.875  
0.925  
UVLO  
L
X80200  
X80201  
X80202  
X80203  
X80204  
0.875  
0.875  
1.65  
0.9  
0.9  
1.7  
0.9  
0.9  
30  
0.925  
0.925  
1.75  
V
V
V
0.875  
0.875  
0.925  
0.925  
V
V
V
UVLO  
comparator Hysteresis  
H,M,L  
mV  
HYS  
DC CHARACTERISTICS – Gates and Others  
V
Voltage Input Valid High for  
ENS, SETV, GATEH_EN  
VDDH x  
0.7  
VDDH + 0.5  
VDDH x 0.3  
0.4  
V
V
V
IH  
V
Voltage Input Valid Low for  
ENS, SETV, GATEH_EN  
-0.5  
IL  
V
Output LOW Voltage  
(SDA, READY)  
OL  
FN8154.0  
3
X80200, X80201, X80202, X80203, X80204  
Power Sequencing Control Circuits Over the recommended operating conditions unless otherwise specified (Continued)  
SYMBOL  
PARAMETER  
TEST CONDITIONS  
MIN  
9.0  
7.0  
7.0  
6.0  
0
TYP  
10  
8
MAX  
11.0  
9.0  
UNIT  
V
GATE_H, GATE_M  
V
V
= 5.5V  
V
GATE_ON  
DDH  
DDH  
GATE_L  
GATE_H, GATE_M  
GATE_L  
= 3.1V  
8
9.0  
V
7.0  
8.0  
V
I
Gate Voltage Drive (OFF) for GATE_H,  
GATE_M, GATE_L  
0.1  
V
GATE_OFF  
GATE_ON  
GATE_OFF  
Gate Current Drive (ON) for GATE_H,  
GATE_M, GATE_L  
(Note 1)  
20  
9
35  
10  
45  
11  
µA  
mA  
I
Gate Sinking Current Drive (OFF) for  
GATE_H, GATE_M, GATE_L  
V
V
= 5.5V, V  
= 0V,  
DDM  
DDH  
DDL  
= 0V, GATEH_EN = 0,  
GATE_H = 5.5, GATE_L = 5.5,  
GATE_M = 5.5 (Note 1)  
V
VFB comparator  
(Note 1) 25°C  
15  
10  
20  
25  
mV  
ms  
HYST  
AC CHARACTERISTICS  
t
Delayed READY Output  
V
V
= 5.5V  
= 3.1V  
12  
40  
15  
80  
PURST  
DDH  
DDH  
(READY output delayed after VDDH rises  
above UVLO )  
H
t
V
V
V
V
V
V
V
V
= 5.5V, C  
= 3.1V, C  
= 5.5V  
= 0  
= 0  
600  
700  
750  
900  
6
µs  
ms  
µs  
DELAY_UP  
DDH  
DDH  
DDH  
DDH  
DDH  
DDH  
DDH  
DDH  
GATE  
GATE  
t
800  
900  
6
DELAY_DOWN  
= 3.1V  
ms  
µs  
t
GATE_H, GATE_M, GATE_L  
turn-off time  
= 5.5V, (Note 1)  
= 3.1V, (Note 1)  
= 5.5V, (Note 1)  
= 3.1V, (Note 1)  
40  
80  
0.7  
5
OFF  
µs  
t
GATE_H, GATE_M, GATE_L  
turn-on time  
0.5  
2
0.6  
ms  
ms  
µs  
ON  
t
V
V
Rise Time  
Fall Time  
(Note 1)  
(Note 1)  
1.0  
1.0  
R
DDH  
DDH  
t
µs  
F
GATE_L  
GATE_M  
VDDH  
t
DELAY_DOWN  
t
t
F
t
R
DELAY_UP  
GATE_H, M, L  
t
t
ON  
OFF  
UVLO  
H
VDDH  
t
PURST  
READY  
FN8154.0  
4
X80200, X80201, X80202, X80203, X80204  
Serial bus Interface Electrical Characteristics  
SYMBOL  
PARAMETER  
TEST CONDITIONS  
MIN  
MAX  
UNIT  
V
V
Signal Input Low Voltage  
0.8  
IL  
V
Signal Input High Voltage  
2.0  
V
IH  
V
Signal Output Low Voltage  
Capacitive Load per bus segment  
(Note 1), I  
(Note 1)  
4mA  
pullup  
0.4  
V
OL  
C
400  
pF  
BUS  
Capacitance  
SYMBOL  
PARAMETER  
Output Capacitance (SDA)  
Input Capacitance (SCL)  
TEST CONDITIONS  
MAX  
UNIT  
C
V
V
= 0V, (Note 1)  
OUT  
8
6
pF  
pF  
OUT  
C
= 0V, (Note 1)  
IN  
IN  
NOTE:  
1. Guaranteed by device characterization.  
Equivalent AC Output Load Circuit for  
VDDH = 5V  
AC Test Conditions  
Input pulse levels  
V
x 0.1 to V  
x 0.5  
x 0.9  
CC  
CC  
VDDH  
Input rise and fall times  
Input and output timing levels  
Output load  
10ns  
V
CC  
2.06k  
Standard output load  
SDA, READY  
30pF  
Symbol Chart  
WAVEFORM  
INPUTS  
OUTPUTS  
Must be  
steady  
Will be  
steady  
May change  
from LOW  
to HIGH  
Will change  
from LOW  
to HIGH  
May change  
from HIGH  
to LOW  
Will change  
from HIGH  
to LOW  
Don’t Care:  
Changes  
Allowed  
Changing:  
State Not  
Known  
N/A  
Center Line  
is High  
Impedance  
FN8154.0  
5
X80200, X80201, X80202, X80203, X80204  
Bus Interface AC Timing  
SMBUS  
2-WIRE BUS  
TEST  
SYMBOL  
PARAMETER  
CONDITION  
MIN  
10  
MAX  
MIN  
MAX  
UNITS  
kHz  
µs  
f
Clock Frequency  
Clock Cycle Time  
Clock High Time  
Clock Low Time  
Start Set-up Time  
Start Hold Time  
Stop Set-up Time  
100  
400  
SCL  
t
10  
2.5  
0.6  
1.3  
0.6  
0.6  
0.6  
100  
0
CYC  
t
4.0  
4.7  
4.7  
4.0  
4.0  
250  
300  
50  
µs  
HIGH  
t
µs  
LOW  
t
µs  
SU:STA  
HD:STA  
SU:STO  
t
µs  
t
µs  
t
SDA Data Input Set-up Time  
SDA Data Hold Time  
ns  
SU:DAT  
t
ns  
HD:DAT  
t
SCL and SDA Rise Time: TR = (V  
IHMIN  
- 0.15) to  
ILMAX  
(Note 1)  
(Note 1)  
1000  
300  
300  
300  
ns  
R
(V  
+0.15)  
t
SCL and SDA Fall Time: TF = (V  
ILMAX  
- 0.15) to  
IHMIN  
ns  
F
(V  
- 0.15)  
t
SCL Low to SDA Data Output Valid Time  
SDA Data Output Hold Time  
(Note 1)  
(Note 1)  
(Note 1)  
(Note 1)  
550  
300  
50  
4.7  
0
1100  
250  
0
1100  
ns  
ns  
ns  
µs  
ns  
ns  
AA  
t
DH  
T
Noise Suppression Time Constant at SCL and SDA inputs  
Bus Free Time (Prior to Any Transmission)  
A0, A1, A2 Set-up Time  
50  
1.3  
0
I
t
BUF  
SU:A  
HD:A  
t
t
A0, A1, A2 Hold Time  
0
0
Timing Diagrams  
t
t
BUF  
t
t
R
HIGH  
LOW  
t
t
BUF  
F
SCL  
t
t
t
t
t
SU:DAT  
SU:STA  
HD:DAT  
SU:STO  
HD:STO  
t
t
HD:STA  
SDA IN  
t
t
DH  
AA  
HD:DAT  
SDA OUT  
FIGURE 1. BUS TIMING  
START  
SCL  
CLK 1  
CLK 9  
SLAVE ADDRESS BYTE  
SDA IN  
t
t
HD:A  
SU:A  
A2, A1, A0  
FIGURE 2. ADDRESS PIN TIMING  
FN8154.0  
6
X80200, X80201, X80202, X80203, X80204  
In the absence of an externally provided ENS signal, the  
Principles of Operation  
Power Sequencing Control (PSC)  
ENS pin can be connected in a number of different ways.  
• ENS can connect to the VDDH pin. In this case, the  
GATE_H and GATE_L outputs are enabled at the same  
time. GATE_H could be delayed by using an external RC  
timer between READY and GATEH_EN to provide a  
sequence where VDDL is the first supply voltage applied  
to the system.  
The Intersil X80200 supports a variety of sequencing  
applications. The sequencing can be voltage-based or time-  
based. Some examples are shown in Figure , Figure , and  
Figure in the Applications section. The X80200 allows for  
designs that can control the power sequencing of up to three  
voltage supplies. For systems with more than three supplies,  
the X80200 may be cascaded.  
• ENS can connect to a delayed READY signal, so that the  
VDDL voltage follows the VDDH voltage by a fixed time.  
Basic Functions  
• ENS can connect to the system side of the VDDH FET, so  
the VDDL voltage will follow immediately after the primary  
supply is applied to the system.  
VDDH is the primary voltage for the X80200. Once VDDH  
rises above the primary undervoltage lockout level (UVLO )  
H
for time t  
, the READY output goes HIGH indicating  
PURST  
See "Functional Description" on page 7 for details on timing  
and ramp-up.  
that the supply power is good. By connecting READY  
directly to GATEH_EN, the GATE_H output goes high  
immediately, turning on the power FET connected in series  
with VDDH. The system primary voltage may be delayed by  
using an external RC circuit between READY and  
GATEH_EN.  
VOLTAGE-BASED POWER SEQUENCING  
In this configuration, the drain of the “L” MOSFET is  
connected to the VFB input of the X80200, the ENS pin is  
tied to ground and a resistor divider provides a reference  
voltage to the REF pin.  
VDDH must be stable before VDDM and VDDL supplies are  
monitored and power sequencing begins.  
A LOW to HIGH transition of the SETV pin turns on the  
GATE_L output. This turns on the “L” MOSFET. Once the  
drain of this FET reaches the REF level, GATE_M turns on.  
Since the trigger for the GATE_M output is selected by a  
threshold level, the user has the ability to specify relative  
core and I/O voltage sequencing.  
The second supply voltage (I/O supply) is monitored by the  
VDDM pin. VDDM must be greater than the I/O supply  
undervoltage lockout level (UVLO ) prior to any activation of  
the GATE_M output. The VDDM voltage is used to turn on  
the charge pump that drives the GATE_M output.  
M
System Monitoring and Remote Shutdown  
The third supply (core supply) is monitored by the VDDL pin.  
VDDL must be greater than the core supply undervoltage  
The X80200 Status Register contains fault detection bits that  
indicate the status of the GATE_H, GATE_M, and GATE_L  
pins. These bits are Stat_GATEH, Stat_GATEM, and  
Stat_GATEL. The status register can be read via 2-wire bus.  
This feature allows for system monitoring of the power  
sequencing of supplies.  
lockout level (UVLO ) prior to any activation of the GATE_L  
L
output. The VDDL voltage is used to turn on the charge  
pump that drives the GATE_M output.  
Power Sequencing Functions  
X80200 provides two options for power sequencing. In time  
based sequencing, the ENS (Enable Sequence) input  
signals that the core and I/O voltages are to turn on with a  
fixed time relationship. In voltage based sequencing, the  
SETV (Set Voltage) initiates turn-on of the core voltage. The  
I/O voltage remains off until the core voltage reaches a set  
threshold.  
The system can turn off the FETs by writing to the Remote  
Shutdown Register through the 2-wire interface. There are  
three turn-off selections. See "Remote Shutdown Register  
(RSR) (Volatile)" on page 10 for more details.  
Functional Description  
Voltage Inputs. The X80200 has three voltage monitors for  
power sequencing: the VDDH (primary voltage), VDDM (I/O  
voltage), and VDDL (core voltage). These voltage monitors  
operate independently of each other.  
In both cases the X80200 uses a core-voltage first and core  
voltage-last power up/down algorithm.  
TIME-BASED POWER SEQUENCING  
A rising edge (LOW to HIGH) transition of the ENS pin turns  
on the charge pump that drives the GATE_L output.  
PRIMARY VOLTAGE VDDH  
This voltage is the primary voltage for the device and is  
required before X80200 can power sequence VDDM and  
VDDL. As VDDH powers up, it is compared to an internal  
A falling edge (HIGH to LOW) transition of the ENS signal  
turns off the charge pump that drives the GATE_M output.  
This technique provides a “forced” core-voltage-first power  
up and core-voltage-last power down algorithm. The ENS  
signal does not control the ramp up/down rates of the  
GATE_M or GATE_L outputs.  
UVLO reference. This undervoltage lockout level is preset  
H
at the factory. For information on this setting, see Ordering  
Information. For custom programmed levels, contact Intersil.  
FN8154.0  
7
X80200, X80201, X80202, X80203, X80204  
The READY output pin reflects the condition of the VDDH  
input. READY is LOW as long as VDDH is below UVLO  
time, the GATE_M charge pump turns ON. Again the slew  
rate is dependent on the load connected to GATE_M output.  
H
and remains LOW for a period of t  
after VDDH  
PURST  
The falling edge transition on the ENS pin (HIGH to LOW)  
turns off the charge pump that drives the GATE_M output.  
crosses UVLO , see Figure 4. Once VDDH rises above  
H
UVLO and remains stable for t  
, the READY output  
PURST  
H
After a t  
time period, the GATE_L charge  
DELAY_DOWN  
turns ON. If READY connects directly to the GATEH_EN pin,  
then the GATE_H charge pump turns on immediately. The  
turn on of the Gate_H charge pump can be delayed by using  
an external filter (RC filter) connected between the READY  
and GATEH_EN pins.  
pump turns OFF.  
ENS  
When VDDH drops below the UVLO threshold, READY  
H
goes inactive immediately. For more details on this turn-off  
mechanism, See "Power Supply Failure Conditions" on  
page 9.  
t
DELAY_DOWN  
GATE_L  
t
DELAY_UP  
SECONDARY VOLTAGES VDDM AND VDDL  
The VDDM and VDDL voltage inputs each have their own  
undervoltage lockout settings, UVLO , and UVLO ,  
M
L
respectively. Each undervoltage lockout level is preset at the  
factory. For information on these settings, See Ordering  
Information. For custom programmed levels, contact Intersil.  
GATE_M  
FIGURE 3. TIME BASED SEQUENCING OF GATE_M AND  
GATE_L  
The GATE_M and GATE_ L charge pumps are OFF as long  
as VDDM, and VDDL are below their respective UVLO trip  
points. When READY is active and VDDM and VDDL go  
above their UVLO thresholds, the GATE_M and GATE_L  
charge pumps can be turned ON when activated as part of  
the power sequence desired. If VDDL or VDDM drop below  
the UVLO level the charge pumps turn off. For more details  
on this turn-off mechanism, See "Power Supply Failure  
Conditions" on page 9.  
UVLO  
H
VDDH  
t
PURST  
Sequence Delay Logic. This block contains the logic  
circuits that implement the power-up and power-down  
sequencing of the VDDH (GATE_H), VDDM (GATE_M), and  
VDDL (GATE_L) voltages. The sequencing protocol has a  
built-in “core-first-up and core-down-last” algorithm. On  
power-up the GATE_L signal turns on first, followed by  
GATE_M signal. During the power-down, the GATE_M turns  
off first and the GATE_L signal follows.  
READY  
FIGURE 4. VDDH/READY SEQUENCING  
Voltage Based Power Sequencing (SETV Option)  
Using the SETV pin allows for a voltage based sequencing  
of the GATE_L and GATE_M outputs. SETV is an edge  
triggered input signal. A LOW to HIGH transition on SETV  
immediately turns ON the charge pump for GATE_L. The  
GATE_L output then starts ramping up. In this configuration,  
the drain of the MOSFET “L” connects to the VFB pin and  
this voltage is compared to an external reference applied to  
the REF pin. The comparator turns on the charge pump for  
GATE_M once the voltage on VFB exceeds the voltage on  
REF. (See Figure 5.)  
The sequencing of the power supplies is primarily controlled  
and regulated via the SETV and the ENS (enable sequence)  
pins.  
All charge pumps are designed to ramp up their respective  
gates at the same slew rate for the same load.  
Time Based Power Sequencing (ENS option)  
The ENS (Enable Sequence) pin controls the start of the  
ramp up/ramp down sequence for GATE_M and GATE_L in  
the time domain. (See Figure 3.)  
The voltage sequencing comparator has a 30mV hysteresis,  
so the GATE_M output does not oscillate as the core voltage  
powers up.  
A High to Low transition of SETV turns OFF charge pump M  
ENS is an edge-triggered input. A rising edge (LOW to  
HIGH) on the ENS input turns on the charge pump that  
drives the GATE_L output. The slew rate of the GATE_L  
output depends on the external MOSFET and any load  
and GATE_M is pulled low. After a t  
time  
DELAY_DOWN  
period, charge pump L turns off and GATE_L is pulled low.  
connected to it. (See Electrical Table). After a t  
DELAY_UP  
FN8154.0  
8
X80200, X80201, X80202, X80203, X80204  
VDDH  
FAILS  
VDDM  
FAILS  
VDDL  
FAILS  
SETV  
VDDH  
VDDM  
t
GATE_L  
DELAY_DOWN  
REF  
REF  
VDDL  
FET “L”  
DRAIN  
(VFB)  
GATE_H  
GATE_M  
GATE_L  
GATE_M  
FIGURE 5. VOLTAGE BASED SEQUENCING OF GATE_M  
AND GATE_L  
t
DELAY_DOWN  
Power Supply Failure Conditions  
Should there be a power failure of VDDH, GATE_H,  
GATE_M and GATE_L charge pumps are all turned OFF  
FIGURE 6. GATE CONTROL DURING INDIVIDUAL POWER  
FAIL CONDITIONS  
when VDDH falls below the UVLO threshold.  
H
Should there be a failure of the VDDM supply, the GATE_M  
Remote Monitoring Functions  
charge pump turns off when VDDM falls below the UVLO  
M
threshold. After a t  
time period, the GATE_L  
The X80200 can monitor the status of the GATE_H,  
GATE_M, and GATE_L charge pump control signals. This  
allows an indirect way to monitor system voltages. The  
volatile status bits: Stat_GATEH, Stat_GATEM, and  
Stat_GATEL indicate the status of GATE_H, GATE_M and  
GATE_L output control signals, respectively. If the bit is a “1”,  
then the charge pump is being turned on. If the bit is a “0”,  
the output is turned off. Since the bits reflect the internal  
control signal and not the state of the output, external  
loading that prevents the charge pump from reaching the  
desired FET gate drive voltage will not be detected by  
reading the register.  
DELAY_DOWN  
charge pump turns OFF.  
Should there be a failure of the VDDL supply, the GATE_L  
and GATE_M charge pumps both turn off when VDDL falls  
below the UVLO threshold.  
L
These status bits can be read via the 2-wire serial bus. Refer  
to Status Register section for more information on how to  
read this register.  
Several X80200 devices can be used to monitor many  
system voltages on different system cards on a backplane.  
Each X80200 has 3 slave address pins allowing up to 8  
X80200 to be used on the same bus.  
X80200 provides the user the ability to remotely turn-off the  
gates through software. (See "Remote Shutdown Register  
(RSR) (Volatile)" on page 10 for more information.)  
FN8154.0  
9
X80200, X80201, X80202, X80203, X80204  
Register Information  
Remote Shutdown Register (RSR) (Volatile)  
The Register Block is organized as follows:  
RSR  
GATE  
DATA SHUTDOWN  
SEQUENCE  
• Status Register (SR) (1 Byte). Located at address 00h.  
01  
GATE_M,  
GATE_L  
GATE_M turns off, then after time  
DELAY_DOWN  
• Remote Shut Down Register (RSR) (1 Byte). Located at  
address FFh.  
t
GATE_L turns off.  
02  
03  
GATE_H  
Immediate turn off of GATE_H  
Status Register (Volatile)  
GATE_H,  
GATE_M,  
GATE_L  
GATE_H and GATE_M turn off, then after  
7
6
5
4
3
2
1
0
time t  
GATE_L turns off.  
DELAY_DOWN  
0
0
0
0
STAT_  
GATEH  
STAT_  
GATEM  
STAT_  
GATEL  
WEL  
00  
no override  
X80200 returns to previous condition,  
assuming all supplies are good, GATE_H  
and GATE_L turn on, then GATE_M turns  
on according to the chosen sequence  
mode.  
The Status Register provides the user a mechanism for  
checking the status of GATE_H, GATE_M and GATE_L.  
These bits are volatile and are read only.  
The X80200 provides the user with a software shutdown of  
GATE_H, GATE_L and GATE_M. This over-rides the normal  
output control.  
The gate status values in the Status Register can be read at  
any time by performing a random read operation. Only one  
byte is returned by each read operation. The master should  
supply a stop condition following the output byte to be  
consistent with the bus protocol.  
A write operation with data 01h to the RSR will immediately  
turn off GATE_M followed by GATE_L. The GATE_L turn off  
is delayed by t  
.
DELAY_DOWN  
STAT_GATEH: GATEH Status Flag (volatile)  
A write operation with data 02 to the RSR will turn off  
GATE_H.  
STAT_GATEH will be set to ‘1’ when the GATE_H charge  
pump is turned on. It will be reset to ‘0’ when the GATE_H  
charge pump is turned off.  
A write operation with data 03 to RSR will shutdown all  
gates. GATE_H turn off at the same time as GATE_M.  
STAT_GATEM: GATEM Status Flag (volatile)  
GATE_L turns off after a delay of t  
.
DELAY_DOWN  
STAT_GATEM will be set to ‘1’ when GATE_M charge pump  
is turned on. It will be reset to ‘0’ when the GATE_M charge  
pump is turned off.  
A write operation with data 00h to the RSR will remove the  
software override function. Assuming all supplies are good,  
the X80200 will return to the previous state by first turning on  
GATE_H and GATE_L. Then, GATE_M is turned on  
according to the power sequencing mode chosen.  
STAT_GATEL: GATEL Status Flag (volatile)  
STAT_GATEL will be set to ‘1’ when GATE_L charge pump  
is turned on. It will be reset to ‘0’ when the GATE_L charge  
pump is turned off.  
Bits 7, 6, 5, 4, 3 and 2 of the Remote Shutdown Register  
should always be set to ‘0’.  
The status register also contains a WEL bit that controls  
write operations to the Shutdown Register. Bits 7, 6, 5, and 4  
should always be set to ‘0’.  
The data in the RSR can be read by performing a random  
read operation to the RSR. The data in the RSR powers up  
in ‘0’ state.  
WEL: Write Enable Latch (Volatile)  
The WEL bit controls the access to the Remote Shutdown  
Register (RSR). This bit is a volatile latch that powers up in  
the LOW (disabled) state. While the WEL bit is LOW, writes  
to the RSR will be ignored (no acknowledge will be issued  
after the Data Byte). The WEL bit is set by writing a “1” to the  
WEL bit and zeroes to the other bits of the status register.  
Bus Interface Information  
Interface Conventions  
The device supports a bidirectional bus oriented protocol.  
The protocol defines any device that sends data onto the  
bus as a transmitter, and the receiving device as the  
receiver. The device controlling the transfer is called the  
master and the device being controlled is called the slave.  
The master always initiates data transfers, and provides the  
clock for both transmit and receive operations. Therefore,  
the devices in this family operate as slaves in all  
applications.  
FN8154.0  
10  
X80200, X80201, X80202, X80203, X80204  
SERIAL CLOCK AND DATA  
Word Address  
Data states on the SDA line can change only during SCL  
LOW. SDA state changes during SCL HIGH are reserved for  
indicating start and stop conditions. (See Figure 7.)  
The next 8 bits following the slave byte, BA7–BA0,  
determine the portion of the device accessed. If all ‘0’s, then  
Status Register (SR) is selected. If all ‘1’s, then the Remote  
Shutdown Register (RSR) is selected.  
Serial Acknowledge  
SCL  
SDA  
Acknowledge is a software convention used to indicate  
successful data transfer. The transmitting device, either  
master or slave, will release the bus after transmitting eight  
bits. During the ninth clock cycle, the receiver will pull the  
SDA line LOW to acknowledge that it received the eight bits  
of data. (See Figure 9.)  
DATA  
DATA STABLE  
DATA STABLE  
CHANGE  
FIGURE 7. VALID DATA CHANGES ON THE SDA BUS  
SERIAL START CONDITION  
All commands are preceded by the start condition, which is a  
HIGH to LOW transition of SDA when SCL is HIGH. The  
device continuously monitors the SDA and SCL lines for the  
start condition and will not respond to any command until  
this condition has been met. (See Figure 8.)  
The device will respond with an acknowledge after  
recognition of a start condition and if the correct Device  
Identifier and Select bits are contained in the Slave Address  
Byte. If a write operation is selected, the device will respond  
with an acknowledge after the receipt of each subsequent  
eight bit word. The device will acknowledge all incoming data  
and address bytes, except for the Slave Address Byte when  
the Device Identifier and/or Select bits are incorrect.  
SERIAL STOP CONDITION  
All communications must be terminated by a stop condition,  
which is a LOW to HIGH transition of SDA when SCL is  
HIGH, followed by a HIGH to LOW transition on SCL. After  
going LOW, SCL can stay LOW or return to HIGH. (See  
Figure 8.)  
SCL FROM  
1
8
9
MASTER  
DATA OUTPUT  
FROM TRANSMITTER  
DATA OUTPUT  
FROM RECEIVER  
SCL  
SDA  
START  
ACKNOWLEDGE  
FIGURE 9. ACKNOWLEDGE RESPONSE FROM RECEIVER  
START  
STOP  
Write Operation  
FIGURE 8. VALID START AND STOP CONDITIONS  
For a write operation, the device requires the Slave Address  
Byte and a Word Address Byte. This gives the master  
access to the registers. After receipt of the Word Address  
Byte, the device responds with an acknowledge, and awaits  
the next eight bits of data. After receiving the 8 bits of the  
Data Byte, the device again responds with an acknowledge.  
The master then terminates the transfer by generating a stop  
condition. (See Figure 11, See Figure 1 for bus timing.)  
Slave Address Byte  
Following a START condition, the master must output a  
Slave Address Byte. This byte consists of three parts:  
• The Device Type Identifier which consists of the most  
significant four bits of the Slave Address. The Device Type  
Identifier MUST be set to 1010 in order to select the  
device.  
In order to perform a write operation to Remote Shutdown  
Register, the Write Enable Latch (WEL) bit must first be set.  
• The next 3 bits (SA3 - SA1) are slave address bits. These  
bits are compared to the status of the input pins A2–A0.  
• The Least Significant Bit of the Slave Address (SA0) Byte  
is the R/W bit. This bit defines the operation to be  
performed on the device being addressed (as defined in  
the bits SA2 - SA1). When the R/W bit is “1”, then a READ  
operation is selected. A “0” selects a WRITE operation.  
FN8154.0  
11  
X80200, X80201, X80202, X80203, X80204  
Read Operation  
A Read operation is initiated in the same manner as a write  
operation with the exception that the R/W bit of the Slave  
Address Byte is set to one.  
Operational Notes  
The device powers-up in the following state:  
• The device is in the low power standby state.  
• The WEL bit is set to ‘0’. It is not possible to write to the  
device.  
Prior to issuing the Slave Address Byte with the R/W bit set to  
one, the master must first perform a “dummy” write operation.  
The master issues the start condition and the Slave Address  
Byte, receives an acknowledge, then issues the Word Address  
Byte. After acknowledging receipt of the Word Address Byte,  
the master immediately issues another start condition and the  
Slave Address Byte with the R/W bit set to one. This is followed  
by an acknowledge from the device and then by the data byte  
containing the register contents. The master terminates the  
read operation by responding with a no-acknowledge and then  
issuing a stop condition. The ninth clock cycle of the read  
operation is not a “don’t care.” To terminate a read operation,  
the master must either issue a stop condition during the  
ninth cycle or hold SDA HIGH during the ninth clock cycle  
and then issue a stop condition.  
• The WEL bit must be set to allow write operations.  
• SDA pin is the input mode.  
• The data in the RSR powers up in ‘0’ state.  
See Figure 12 for the address, acknowledge, and data  
transfer sequence. See Figure 1 for bus timing.  
SLAVE ADDRESS  
INTERNAL  
DEVICE TYPE  
READ/  
WRITE  
DEVICE  
IDENTIFIER  
ADDRESS  
SA7 SA6  
SA3 SA2  
SA5 SA4  
SA1  
SA0  
0
1
0
1
A2  
A1  
A0 R/W  
BIT SA0  
OPERATION  
WRITE  
0
1
READ  
WORD ADDRESS  
BA7 BA6 BA5 BA4 BA3 BA2 BA1 BA0  
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
SR  
RSR  
DATA BYTE  
D7 D6  
D5  
D4  
D3  
D2  
D1  
D0  
FIGURE 10. ADDRESS FORMAT  
FN8154.0  
12  
X80200, X80201, X80202, X80203, X80204  
S
T
SIGNALS FROM  
THE MASTER  
S
T
SLAVE  
DEVICE  
ID  
A
R
T
WORD  
ADDRESS  
ADDRESS  
O
P
DATA  
SDA BUS  
0
0
A2 A1 A0  
1
0
1
A
C
K
A
C
K
A
C
K
SIGNALS FROM  
THE SLAVE  
FIGURE 11. BYTE WRITE SEQUENCE  
S
T
S
S
T
SIGNALS FROM  
SLAVE  
ADDRESS  
T
A
R
T
DEVICE  
ID  
WORD  
SLAVE  
ADDRESS  
DEVICE  
ID  
THE MASTER  
A
R
T
ADDRESS  
O
P
SDA BUS  
1
0 1 0  
1
0 1 0  
0
A2 A1 A0  
1
A2 A1 A0  
A
C
K
A
C
K
A
C
K
SIGNALS FROM  
THE SLAVE  
DATA  
FIGURE 12. READ SEQUENCE  
Application Section  
DC-DC  
#1  
SYSTEM  
PRIMARY  
COMPONENTS &  
BOARD SUPPLIES  
H (OPTIONAL)  
M
I/O VOLTAGES  
I/O SUPPLY  
DC-DC  
#2  
µP/  
ASICs/  
FPGA  
CORE VOLTAGES  
DC-DC  
#3  
CORE SUPPLY  
L
X80200  
VFB  
VDDH  
GATE_H  
GATE_M  
GATE_L  
ENS  
VCORE  
V I/O  
Primary  
5V  
3.3V  
2.7V  
2.5V  
2.0V  
1.8V  
1.25V  
0.9V  
5V  
VDDM  
REF  
3.3V  
2.5V  
1.35V  
1.25V  
SETV  
VDDL  
A0  
PULL UP  
OPTIONAL  
RC DELAY  
TO SET  
GATEH_EN  
READY  
ADDRESS HIGH  
A2  
GND  
SDA SCL  
SMBus  
SMBus  
FIGURE 13. TELECOM BACKPLACE/SYSTEM POWER SUPPLY VOLTAGE BASED POWER SEQUENCING  
FN8154.0  
13  
X80200, X80201, X80202, X80203, X80204  
DC-DC  
#1  
SYSTEM  
PRIMARY  
COMPONENTS &  
BOARD SUPPLIES  
H (OPTIONAL)  
I/O VOLTAGES  
PGOOD1  
I/O SUPPLY  
DC-DC  
#2  
M
µP/  
ASICs/  
FPGA  
CORE VOLTAGES  
DC-DC  
#3  
CORE SUPPLY  
L
PGOOD2  
VCORE  
V I/O  
Primary  
5V  
3.3V  
2.7V  
2.5V  
2.0V  
1.8V  
1.25V  
0.9V  
5V  
3.3V  
2.5V  
1.35V  
1.25V  
VFB  
VDDH  
GATE_H  
VDDM  
REF  
GATE_M  
GATE_L  
ENS  
OPTION  
SETV  
FORCED  
SEQUENCING  
VDDL  
A0  
PULL UP  
TO SET  
OPTIONAL  
DELAY  
GATEH_EN  
READY  
ADDRESS HIGH  
A2  
GND  
SDA SCL  
SMBus  
SMBus  
FIGURE 14. TELECOM BACKPLACE/SYSTEM POWER SUPPLY TIME BASED POWER SEQUENCING  
FN8154.0  
14  
X80200, X80201, X80202, X80203, X80204  
POWER SEQUENCING (TIME BASED MODE)  
USING POWER GOOD SIGNALS  
PRIMARY  
H (OPTIONAL)  
V I/O  
DC-DC  
#1  
SYSTEM  
COMPONENTS &  
BOARD SUPPLIES  
DC-DC  
#2  
I/O SUPPLY  
PGOOD1  
M
7,8,55-57  
V
µP/  
ASICs/  
FPGA  
V
ID4:ID0  
ID4:IDO  
VRM  
10  
PWRGD  
VCORE  
POWER  
SUPPLY  
CORE SUPPLY  
53 OUTEN  
VCORE V I/O Primary  
3.3V  
2.7V  
2.5V  
2.0V  
1.8V  
1.25V  
0.9V  
5V  
5V  
3.3V  
2.5V  
1.35V  
1.25V  
X80200  
VFB  
VDDH  
GATE_H  
GATE_M  
GATE_L  
ENS  
VDDM  
REF  
5 SCL  
NC  
OPTIONAL  
FORCED  
SDA  
9
SETV  
SEQUENCING  
VDDL  
A0  
PULL UP  
OPTION  
DELAY  
TO SET  
ADDRESS HIGH  
GATEH_EN  
A2  
READY  
GND  
SDA SCL  
SMBus  
SMBus  
FIGURE 15. POWER SEQUENCING OF VRM SUPPLIES  
FN8154.0  
15  
X80200, X80201, X80202, X80203, X80204  
Packaging Information  
20-Lead Plastic, TSSOP, Package Code V20  
.025 (.65) BSC  
.169 (4.3)  
.252 (6.4) BSC  
.177 (4.5)  
.252 (6.4)  
.260 (6.6)  
.041 (1.05)  
.0075 (.19)  
.002 (.05)  
.0118 (.30)  
.006 (.15)  
.010 (.25)  
Gage Plane  
0° - 8°  
Seating Plane  
.019 (.50)  
.029 (.75)  
Detail A (20X)  
.031 (.80)  
.041 (1.05)  
See Detail “A”  
NOTE: ALL DIMENSIONS IN INCHES (IN PARENTHESES IN MILLIMETERS)  
All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems.  
Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality  
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without  
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and  
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result  
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.  
For information regarding Intersil Corporation and its products, see www.intersil.com  
FN8154.0  
16  

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