IRF420 [INTERSIL]
2.2A and 2.5A, 450V and 500V, 3.0 and 4.0 Ohm, N-Channel Power MOSFETs; 2.2A和2.5A ， 450V和500V ， 3.0和4.0 Ohm的N通道功率MOSFET
| 型号： | IRF420 |
| 厂家： | 
Intersil |
| 描述： | 2.2A and 2.5A, 450V and 500V, 3.0 and 4.0 Ohm, N-Channel Power MOSFETs |
| 文件： | 总7页 (文件大小：73K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRF420, IRF421,
IRF422, IRF423
Semiconductor
2.2A and 2.5A, 450V and 500V, 3.0 and 4.0 Ohm,
N-Channel Power MOSFETs
July 1998
Features
Description
• 2.2A and 2.5A, 450V and 500V
• r = 3.0Ω and 4.0Ω
These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching conver-
tors, motor drivers, relay drivers, and drivers for high power
bipolar switching transistors requiring high speed and low
gate drive power. These types can be operated directly from
integrated circuits.
DS(ON)
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
Formerly developmental type TA17405.
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Ordering Information
D
S
PART NUMBER
IRF420
PACKAGE
TO-204AA
BRAND
IRF420
IRF421
IRF422
IRF423
G
IRF421
IRF422
IRF423
TO-204AA
TO-204AA
TO-204AA
NOTE: When ordering, use the entire part number.
Packaging
JEDEC TO-204AA
DRAIN
(FLANGE)
SOURCE (PIN 2)
GATE (PIN 1)
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
File Number 1571.3
Copyright © Harris Corporation 1998
5-1
IRF420, IRF421, IRF422, IRF423
o
Absolute Maximum Ratings
T
= 25 C Unless Otherwise Specified
C
IRF420
500
IRF421
450
IRF422
500
IRF423
450
UNITS
Drain to Source Breakdown Voltage (Note 1). . . . . . . . . .V
V
V
DS
Drain to Gate Voltage (R
GS
= 20kΩ) (Note 1) . . . . . . . V
500
450
500
450
DGR
Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . I
2.5
1.6
2.5
1.6
2.2
1.4
2.2
1.4
A
A
D
D
o
T
= 100 C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . I
10
±20
10
±20
8
±20
8
±20
A
V
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . .P
50
50
50
50
W
D
o
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.4
0.4
0.4
0.4
W/ C
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . .E
210
210
210
210
mJ
AS
o
Operating and Storage Temperature . . . . . . . . . . . .T , T
J
-55 to 150
-55 to 150
-55 to 150
-55 to 150
C
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . T
Package Body for 10s, See TB334 . . . . . . . . . . . . . . . T
o
300
260
300
260
300
260
300
260
C
C
L
o
pkg
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
o
o
1. T = 25 C to 125 C.
J
o
Electrical Specifications
T = 25 C, Unless Otherwise Specified
C
PARAMETER
SYMBOL
TEST CONDITIONS
I = 250µA, V = 0V, (Figure 10)
D
MIN
TYP MAX UNITS
Drain to Source Breakdown Voltage
IRF420, IRF422
BV
DSS
GS
500
450
2.0
-
-
-
-
-
-
-
V
V
IRF421, IRF423
-
Gate Threshold Voltage
Zero Gate Voltage Drain Current
V
V
V
V
= V , I = 250µA
DS
4.0
25
250
V
GS(TH)
GS
DS
DS
D
I
= Rated BV
, V
DSS GS
= 0V
µA
µA
DSS
= 0.8 x Rated BV
, V
DSS GS
= 0V,
-
o
T = 125 C
J
On-State Drain Current (Note 2)
IRF420, IRF421
I
V
> I
D(ON)
x r = 10V
, V
D(ON)
DS
(Figure 7)
DS(ON)MAX GS
2.5
2.2
-
-
-
-
-
-
A
A
IRF422, IRF423
Gate to Source Leakage Current
I
V
= ±20V
±100
nA
GSS
GS
Drain to Source On Resistance (Note 2)
IRF420, IRF421
r
I
= 1.4A, V
= 10V, (Figures 8, 9)
GS
DS(ON)
D
-
2.5
3.0
2.3
10
12
28
12
11
3.0
4.0
-
Ω
Ω
IRF422, IRF423
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
-
g
V
≥ 10V, I = 2.0A, (Figure 12)
1.5
S
DS
D
fs
t
V
V
= 250V, I ≈ 2.5A, R = 18Ω, R = 96Ω,
-
-
-
-
-
15
18
42
18
19
ns
ns
ns
ns
nC
d(ON)
DD
D
G
L
= 10V, (Figures 17, 18) MOSFET Switching
GS
t
r
Times are Essentially Independent of Operating
Temperature
Turn-Off Delay Time
Fall Time
t
d(OFF)
t
f
Total Gate Charge
Q
V
= 10V, I ≈ 2.5A, V = 0.8 x Rated BV
DS DSS,
g(TOT)
GS
D
(Gate to Source + Gate to Drain)
I
= 1.5mA, (Figures 14, 19, 20)
G(REF)
Gate Charge is Essentially Independent of
Operating Temperature
Gate to Source Charge
Q
Q
-
-
5
6
-
-
nC
nC
gs
Gate to Drain “Miller” Charge
gd
5-2
IRF420, IRF421, IRF422, IRF423
o
Electrical Specifications
PARAMETER
T = 25 C, Unless Otherwise Specified (Continued)
C
SYMBOL
TEST CONDITIONS
= 25V, V = 0V, f = 1MHz, (Figure 11)
GS
MIN
TYP MAX UNITS
Input Capacitance
C
V
-
-
-
-
300
75
-
-
-
-
pF
pF
pF
nH
ISS
DS
Output Capacitance
C
C
OSS
RSS
Reverse Transfer Capacitance
Internal Drain Inductance
20
L
Measured between the Modified MOSFET
Contact Screw on the Symbol Showing the
Flange that is Closer to Internal Devices
5.0
D
S
Source and Gate Pins
and the Center of Die.
Inductances.
D
Internal Source Inductance
L
Measured from the
Source Lead, 6mm
(0.25in) from the Flange
and Source Bonding
Pad.
-
12.5
-
nH
L
D
G
L
S
S
o
o
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
R
R
-
-
-
-
2.5
30
C/W
θJC
Free Air Operation
C/W
θJA
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNITS
D
S
Continuous Source to Drain Current
I
Modified MOSFET
Symbol Showing the
Integral Reverse P-N
Junction Diode
-
-
-
-
2.5
10
A
A
SD
Pulse Source to Drain Current
(Note 3)
I
SDM
G
o
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
Reverse Recovered Charge
NOTES:
V
T = 25 C, I
J
= 2.5A, V
GS
= 0V, (Figure 13)
-
-
1.4
540
2.3
V
SD
SD
SD
SD
o
t
T = 25 C, I
J
= 2.5A, dI /dt = 100A/µs
SD
130
0.57
270
1.2
ns
µC
rr
o
Q
T = 25 C, I
= 2.5A, dI /dt = 100A/µs
SD
RR
J
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by max junction temperature. See Transient Thermal Impedance curve (Figure 3).
o
4. V
= 50V, starting T = 25 C, L = 60mH, R = 25Ω, peak I = 2.5A, Figures 15, 16.
J G AS
DD
5-3
IRF420, IRF421, IRF422, IRF423
o
Typical Performance Curves T = 25 C Unless Otherwise Specified
C
1.2
1.0
0.8
0.6
0.4
0.2
0
2.5
2.0
1.5
1.0
0.5
0
IRF420, IRF421
IRF422, IRF423
0
50
100
150
25
50
75
100
125
150
o
o
T , CASE TEMPERATURE ( C)
T
, CASE TEMPERATURE ( C)
C
C
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
10
0.5
1
0.2
0.1
P
DM
0.05
0.1
0.02
0.01
t
1
t
2
NOTES:
SINGLE PULSE
DUTY FACTOR: D = t /t
1
2
T
= P
x Z
+ T
J
DM
θJC C
0.01
-5
10
-4
-3
-2
10
10
10
0.1
t , RECTANGULAR PULSE DURATION (s)
1
10
1
FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE
5
80µs PULSE TEST
V
= 10V
GS
IRF420/1
10
V
= 6V
GS
10µs
4
3
2
1
0
IRF422/3
IRF420/1
100µs
IRF422/3
V
= 5.5V
1
GS
OPERATION IN THIS
AREA IS LIMITED
1ms
10ms
DC
BY r
DS(ON)
o
= 25 C
= MAX RATED
V
= 5V
IRF420/2
IRF421/3
T
T
GS
C
J
V
= 4V
GS
SINGLE PULSE
V
= 4.5V
GS
200
, DRAIN TO SOURCE VOLTAGE (V)
0.1
2
3
0
50
100
150
250
1
10
10
10
V
, DRAIN TO SOURCE VOLTAGE (V)
V
DS
DS
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. OUTPUT CHARACTERISTICS
5-4
IRF420, IRF421, IRF422, IRF423
o
Typical Performance Curves T = 25 C Unless Otherwise Specified (Continued)
C
5
4
3
2
1
0
10
1
80µs PULSE TEST
V
≥ 50V
DS
80µs PULSE TEST
V
= 10V
GS
o
T
= 150 C
J
o
V
= 6V
T = 25 C
J
GS
V
= 5.5V
GS
0.1
V
= 5V
GS
V
= 4V
GS
V
= 4.5V
GS
16
, DRAIN TO SOURCE VOLTAGE (V)
0.01
0
2
4
6
8
10
0
4
8
12
20
V
V
, GATE TO SOURCE VOLTAGE (V)
DS
GS
FIGURE 6. SATURATION CHARACTERISTICS
FIGURE 7. TRANSFER CHARACTERISTICS
10
8
3.0
2.4
1.8
1.2
0.6
0
80µs PULSE TEST
I
= 2.5A
D
V
= 10V
GS
6
V
= 10V
GS
4
V
= 20V
GS
2
0
0
2
4
6
8
10
-60 -40 -20
0
20 40
60 80 100 120 140 160
o
I
, DRAIN CURRENT (A)
D
T , JUNCTION TEMPERATURE ( C)
J
NOTE: Heating effect of 2µs pulse is minimal.
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 9. NORMALIZED DRAIN TO SOURCE vs JUNCTION
TEMPERATURE
1000
1.25
V
C
= 0V, f = 1MHz
GS
ISS
I
= 250µA
D
= C + C
GS GD
C
C
= C
GD
RSS
OSS
800
600
400
200
0
1.15
1.05
0.95
0.85
0.75
≈ C + C
DS
GS
C
ISS
C
OSS
C
RSS
2
-60 -40 -20
0
20 40 60 80 100 120 140 160
o
1
10
, DRAIN TO SOURCE VOLTAGE (V)
10
V
T , JUNCTION TEMPERATURE ( C)
DS
J
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
5-5
IRF420, IRF421, IRF422, IRF423
o
Typical Performance Curves T = 25 C Unless Otherwise Specified (Continued)
C
4.0
10
PULSE DURATION = 80µs
PULSE DURATION = 80µs
3.2
o
= 25 C
T
J
2.4
1.6
0.8
0
o
T
= 150 C
J
1
o
T
= 150 C
J
o
T
= 25 C
J
0.1
0
0.8
1.6
2.4
4.0
3.2
0
0.4
0.8
1.2
1.6
2.0
I
, DRAIN CURRENT (A)
V
, SOURCE TO DRAIN VOLTAGE (V)
SD
D
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
20
I
= 2.5A
D
V
V
V
= 400V
= 250V
= 100V
DS
DS
DS
16
12
8
4
0
0
4
8
20
12
16
Q
, TOTAL GATE CHARGE (nC)
g(TOT)
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
5-6
IRF420, IRF421, IRF422, IRF423
Test Circuits and Waveforms
V
DS
BV
DSS
L
t
P
V
DS
I
VARY t TO OBTAIN
P
AS
+
-
V
DD
R
REQUIRED PEAK I
G
AS
V
DD
V
GS
DUT
t
P
I
0V
AS
0
0.01Ω
t
AV
FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 16. UNCLAMPED ENERGY WAVEFORMS
t
t
ON
OFF
t
d(OFF)
t
d(ON)
t
t
f
r
R
L
V
DS
90%
90%
+
V
DD
10%
10%
R
G
0
0
-
DUT
90%
50%
V
GS
50%
PULSE WIDTH
10%
V
GS
FIGURE 17. SWITCHING TIME TEST CIRCUIT
FIGURE 18. RESISTIVE SWITCHING WAVEFORMS
V
DS
(ISOLATED
SUPPLY)
CURRENT
REGULATOR
V
DD
Q
SAME TYPE
AS DUT
g(TOT)
V
GS
12V
BATTERY
0.2µF
Q
gd
50kΩ
0.3µF
Q
gs
D
S
V
DS
G
DUT
0
0
I
G(REF)
0
V
I
DS
G(REF)
I
CURRENT
SAMPLING
RESISTOR
I
CURRENT
SAMPLING
RESISTOR
G
D
FIGURE 19. GATE CHARGE TEST CIRCUIT
FIGURE 20. GATE CHARGE WAVEFORMS
5-7
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