HS9-302RH-T [INTERSIL]
Radiation Hardened CMOS Dual DPST Analog Switch; 抗辐射CMOS双双刀单掷模拟开关
| 型号： | HS9-302RH-T |
| 厂家： | 
Intersil |
| 描述： | Radiation Hardened CMOS Dual DPST Analog Switch |
| 文件： | 总2页 (文件大小：30K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HS-302RH-T
Data Sheet
July 1999
File Number 4603.1
Radiation Hardened
Features
CMOS Dual DPST Analog Switch
• QML Class T, Per MIL-PRF-38535
Intersil’s Satellite Applications FlowTM (SAF) devices are fully
tested and guaranteed to 100kRAD Total Dose. These QML
Class T devices are processed to a standard flow intended
to meet the cost and shorter lead-time needs of large
volume satellite manufacturers, while maintaining a high
level of reliability.
• Radiation Performance
5
- Gamma Dose (γ) 1 x 10 RAD(Si)
• No Latch-Up, Dielectrically Isolated Device Islands
• Pin for Pin Compatible with Intersil HI-302 Series Analog
Switches
• Analog Signal Range 15V
The HS-302RH-T analog switch is a monolithic device
fabricated using Radiation Hardened CMOS technology and
the Intersil dielectric isolation process for latch-up free
operation. Improved total dose hardness is obtained by
layout (thin oxide tabs extending to a channel stop) and
processing (hardened gate oxide). These switches offer low-
resistance switching performance for analog voltages up to
the supply rails. “ON” resistance is low and stays reasonably
constant over the full range of operating voltage and current.
“ON” resistance also stays reasonably constant when
exposed to radiation, being typically 30Ω pre-rad and 35Ω
post 100kRAD(Si). This device provide break-before-make
switching.
• Low Leakage . . . . . . . . . . . . . . . . 100nA (Max, Post Rad)
• Low R
ON
. . . . . . . . . . . . . . . . . . . . . 60Ω (Max, Post Rad)
• Low Operating Power . . . . . . . . . . 100µA (Max, Post Rad)
Pinouts
HS1-302RH-T (SBDIP), CDIP2-T14
TOP VIEW
1
2
3
4
5
6
7
14
13
12
11
10
9
V+
S4
D4
D2
S2
IN2
V-
NC
S3
D3
D1
S1
Specifications
IN1
GND
Specifications for Rad Hard QML devices are controlled by
the Defense Supply Center in Columbus (DSCC). The SMD
numbers listed below must be used when ordering.
8
HS9-302RH-T (FLATPACK), CDFP3-F14
Detailed Electrical Specifications for the HS-302RH-T
are contained in SMD 5962-95812. A “hot-link” is provided
from our website for downloading.
TOP VIEW
1
2
3
4
5
6
7
14
13
12
11
10
9
V+
S4
D4
D2
S2
IN2
V-
NC
S3
www.intersil.com/spacedefense/newsafclasst.asp
D3
Intersil’s Quality Management Plan (QM Plan), listing all
Class T screening operations, is also available on our
website.
D1
S1
IN1
GND
www.intersil.com/spacedefense/newsafclasst.asp
8
Ordering Information
Functional Diagram
TEMP.
ORDERING
NUMBER
PART
NUMBER
RANGE
( C)
o
N
P
5962R9581201TCC
5962R9581201TXC
HS1-302RH-T
HS9-302RH-T
-55 to 125
-55 to 125
IN
D
NOTE: Minimum order quantity for -T is 150 units through
distribution, or 450 units direct.
TRUTH TABLE
LOGIC
ALL SWITCHES
0
1
OFF
ON
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
1
Satellite Applications Flow™ (SAF) is a trademark of Intersil Corporation.
HS-302RH-T
Die Characteristics
DIE DIMENSIONS:
PASSIVATION:
Type: Silox (S O )
(2130µm x 1930µm x 279µm ±25.4µm)
84 x 76 x 11mils ±1mil
i
2
Thickness: 8kÅ ±1kÅ
METALLIZATION:
Type: Al
WORST CASE CURRENT DENSITY:
2
< 2.0e5 A/cm
Thickness: 12.5kÅ ±2kÅ
TRANSISTOR COUNT:
SUBSTRATE POTENTIAL:
76
Unbiased (DI)
PROCESS:
BACKSIDE FINISH:
Metal Gate CMOS, Dielectric Isolation
Gold
Metallization Mask Layout
HS-302RH-T
D3
D1
S1
D4
D2
S2
IN1
IN2
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
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FAX: (886) 2 2715 3029
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TEL: (407) 724-7000
FAX: (407) 724-7240
2
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