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HS-2600RH [INTERSIL]

Radiation Hardened Wideband, High Impedance Operational Amplifier; 抗辐射宽带，高阻抗运算放大器
HS-2600RH
型号： HS-2600RH
厂家： Intersil    Intersil
描述：

Radiation Hardened Wideband, High Impedance Operational Amplifier
抗辐射宽带，高阻抗运算放大器

运算放大器
文件： 总5页 (文件大小：90K)
中文：  中文翻译
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HS-2600RH  
Data Sheet  
August 1999  
File Number 3650.1  
Radiation Hardened Wideband, High  
Impedance Operational Amplifier  
Features  
• Electrically Screened to SMD # 5962-95671  
HS-2600RH is a radiation hardened internally compensated  
bipolar operational amplifier that features very high input  
impedance coupled with wideband AC performance. The  
• QML Qualified per MIL-PRF-38535 Requirements  
• High Input Impedance . . . . . . . . . . . . . . . . . 100MΩ (Min)  
500MΩ (Typ)  
high resistance of the input stage is complemented by low  
o
offset voltage (4mV  
at 25 C for HS-2600RH) and low  
o
• High Slew Rate. . . . . . . . . . . . . . . . . . . . . . . . 3V/µs (Min)  
7V/µs (Typ)  
max  
bias and offset current (10nA max at 25 C for HS-2600RH)  
to facilitate accurate signal processing. Offset voltage can be  
reduced further by means of an external nulling  
potentiometer. The 4V/µs minimum slew rate at 25 C and  
the minimum open loop gain of 100kV/V at 25 C enables the  
• Low Input Bias Current. . . . . . . . . . . . . . . . . . 10nA (Max)  
1nA (Typ)  
o
o
• Low Input Offset Current (HS-2600RH) . . . . . . 4mV (Max)  
• Wide Unity Gain Bandwidth . . . . . . . . . . . . . .12MHz (Typ)  
• Output Short Circuit Protection  
HS-2600RH to perform high gain amplification of fast,  
wideband signals. These dynamic characteristics, coupled  
with fast settling times, make these amplifiers ideally suited  
to pulse amplification designs as well as high frequency or  
video applications. The frequency response of the amplifier  
can be tailored to exact design requirements by means of an  
external bandwidth control capacitor. Other high  
performance designs such as high gain, low distortion audio  
amplifiers, high-Q and wideband active filters and high  
speed comparators, are excellent uses of this part.  
• Total Gamma Dose. . . . . . . . . . . . . . . . . . . . . 10kRAD(Si)  
Applications  
• Video Amplifier  
• Pulse Amplifier  
• High-Q Active Filters  
• High Speed Comparators  
• Low Distortion Oscillators  
Specifications for Rad Hard QML devices are controlled  
by the Defense Supply Center in Columbus (DSCC). The  
SMD numbers listed here must be used when ordering.  
Detailed Electrical Specifications for these devices are  
contained in SMD 5962-95671. A “hot-link” is provided  
on our homepage for downloading.  
Pinout  
HS7-2600RH (CERDIP) GDIP1-T8  
OR  
www.intersil.com/spacedefense/space.asp  
HS7B-2600RH (SBDIP) CDIP2-T8  
TOP VIEW  
Ordering Information  
BAL  
-IN  
+IN  
V-  
1
2
3
4
8
7
6
5
COMP  
V+  
INTERNAL  
MKT. NUMBER  
TEMP. RANGE  
o
ORDERING NUMBER  
5962D9567101VPA  
5962D9567101VPC  
( C)  
–
+
HS7-2600RH-Q  
HS7B-2600RH-Q  
-55 to 125  
-55 to 125  
OUT  
BAL  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.  
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999  
1
HS-2600RH  
Test Circuit  
† INCLUDES STRAY  
AC  
OUT  
V1  
+V  
CAPACITANCES  
CC  
-1/10  
0.1  
2
1
2K  
100pF†  
100K  
1 OPEN  
S3A  
S7  
3
FOR LOOP STABILITY,  
USE MIN VALUE CAPACITOR  
TO PREVENT OSCILLATION  
OPEN  
1
2
BAL  
ADJ  
2
50K  
S1  
1
2
500K  
V2  
S5A  
1
OPEN 2  
DUT  
-
1
1
1
S5B  
+
S9  
2
OPEN  
S6  
1
1
S2  
+
+
S8  
2
1
3
OPEN  
OPEN 2  
BUFFER  
2
100K  
2
S3B  
1
2K  
10K  
OPEN  
V
AC  
-V  
EE  
0.1  
1
100  
100  
x 2  
E
OUT  
5K  
2
S4  
1
ALL RESISTORS = ±1% (Ω)  
50K  
ALL CAPACITORS = ±10% (µF)  
NOTE: For Detailed Information, Refer to HS-2600RH Test Technical Brief.  
Test Waveforms  
SIMPLIFIED TEST CIRCUIT  
V
AC  
+
-
V
OUT  
2kΩ  
100pF  
SLEW RATE WAVEFORMS  
+5.0V  
75%  
+5.0V  
75%  
+5.0V  
-5.0V  
+5.0V  
-5.0V  
INPUT  
OUTPUT  
∆V  
∆V  
25%  
-5.0V  
25%  
-5.0V  
+SL  
-SL  
∆V  
∆T  
SR =  
∆T  
∆T  
OVERSHOOT, RISE AND FALL TIME WAVE FORMS  
V
= +200mV  
FINAL  
V
PEAK  
90%  
0V  
10%  
+200mV  
0V  
OUTPUT  
INPUT  
10%  
0V  
90%  
0V  
-200mV  
-200mV  
t ,+OS  
t ,-OS  
r
f
V
PEAK  
t
t
f
r
NOTE: Measured on both positive and negative transitions. Capacitance at compensation pin should be minimized.  
2
HS-2600RH  
Burn-In Circuit  
HS-2600RH CERDIP  
1
2
3
4
8
7
V+  
R
1
C
C
1
+
3
D
1
6
V-  
5
D
C
2
2
NOTES:  
1. R = 1MΩ, ±5%, 1/4W (Min)  
1
2. C = C = 0.01µF/Socket (Min) or 0.1µF/Row (Min)  
1
2
3. C = 0.01µF/Socket (10%)  
3
4. D = D = IN4002 or Equivalent/Board  
1
2
5. | (V+) - (V-) | = 30V  
Irradiation Circuit  
C
1
2
3
4
8
7
6
5
C
V
1
R
V
2
C
GND  
NOTES:  
6. V = +15V ±10%  
1
7. V = -15V ±10%  
2
8. R = 1MΩ ±5%  
9. C = 0.1µF ±10%  
3
HS-2600RH  
Schematic Diagram  
COMPENSATION  
V+  
R1  
R2  
4.18K  
R3  
1.56K  
R4  
R5  
R6  
30  
C4  
4pF  
1K  
1.56K  
600  
BAL  
C3  
16pF  
BAL  
C2  
9pF  
Q60  
Q1  
Q39  
Q61  
Q40  
Q2  
Q41  
Q3  
Q4  
Q38  
Q42  
Q59  
Q37  
Q5  
Q58  
Q6  
Q7  
Q9  
Q36  
Q32  
Q35  
Q33  
Q31  
Q28  
Q30  
Q29  
Q43  
Q44  
+INPUT  
Q57  
Q11  
Q8  
R18  
30  
Q56  
Q55 Q54  
Q10  
Q17  
Q18  
Q26  
Q25  
OUT  
Q13  
Q16  
Q12  
R17  
30  
Q53  
Q45  
Q24  
Q27  
Q15  
Q47  
Q46  
R7  
Q52  
R11  
4.0K  
1.35  
Q19  
R19  
2.5K  
Q22  
Q21  
Q23  
Q48  
RP1  
R8  
1K  
Q50  
Q49  
Q51  
R9  
4.5K  
Q20  
R12  
1.6K  
R13  
1.6K  
R14  
2.1K  
R15  
800  
R16  
30  
R10  
2.0K  
C1  
16pF  
V-  
-INPUT  
4
HS-2600RH  
Die Characteristics  
DIE DIMENSIONS:  
ASSEMBLY RELATED INFORMATION:  
69 mils x 56 mils x 19 mils ±1 mils  
1750µm x 1420µm x 483µm ±25.4µm  
Substrate Potential (Powered Up):  
Unbiased  
INTERFACE MATERIALS:  
Glassivation:  
ADDITIONAL INFORMATION:  
Worst Case Current Density:  
Type: Nitride (Si3N4) over Silox (SiO2, 5% Phos.)  
Silox Thickness: 12kÅ ±2kÅ  
Nitride Thickness: 3.5kÅ ±1.5kÅ  
5
2
<2 x 10 A/cm  
Transistor Count:  
Top Metallization:  
140  
Type: Al, 1% Cu  
Thickness: 16kÅ ±2kÅ  
Substrate:  
Linear Bipolar DI  
Backside Finish:  
Silicon  
HS-2600RH  
Metallization Mask Layout  
+IN  
-IN  
BAL  
V-  
COMP  
V+  
BAL  
OUT  
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.  
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-  
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and  
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result  
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.  
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com  
5

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