HIP6004 [INTERSIL]

Buck and Synchronous-Rectifier (PWM) Controller and Output Voltage Monitor; 降压和同步整流器( PWM)控制器和输出电压监视器
HIP6004
型号: HIP6004
厂家: Intersil    Intersil
描述:

Buck and Synchronous-Rectifier (PWM) Controller and Output Voltage Monitor
降压和同步整流器( PWM)控制器和输出电压监视器

监视器 控制器
文件: 总12页 (文件大小:213K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
HIP6004  
Data Sheet  
March 2000  
File Number 4275.2  
Buck and Synchronous-Rectifier (PWM)  
Controller and Output Voltage Monitor  
Features  
• Drives Two N-Channel MOSFETs  
• Operates from +5V or +12V Input  
The HIP6004 provides complete control and protection for a  
DC-DC converter optimized for high-performance  
microprocessor applications. It is designed to drive two  
N-Channel MOSFETs in a synchronous-rectified buck  
topology. The HIP6004 integrates all of the control, output  
adjustment, monitoring and protection functions into a single  
package.  
• Simple Single-Loop Control Design  
- Voltage-Mode PWM Control  
• Fast Transient Response  
- High-Bandwidth Error Amplifier  
- Full 0% to 100% Duty Ratio  
The output voltage of the converter is easily adjusted and  
precisely regulated. The HIP6004 includes a 5-input  
digital-to-analog converter (DAC) that adjusts the output  
• Excellent Output Voltage Regulation  
- ±1% Over Line Voltage and Temperature  
• 5-Bit Digital-to-Analog Output Voltage Selection  
voltage from 2.1V  
to 3.5V  
in 0.1V increments and from  
DC  
DC  
in 0.05V steps. The precision reference  
1.3V  
to 2.1V  
- Wide Range . . . . . . . . . . . . . . . . . . . 1.3V  
- 0.1V Binary Steps. . . . . . . . . . . . . . . 2.1V  
- 0.05V Binary Step. . . . . . . . . . . . . . . 1.3V  
to 3.5V  
to 3.5V  
to 2.1V  
DC  
DC  
DC  
DC  
DC  
DC  
DC  
DC  
and voltage-mode regulator hold the selected output voltage  
to within ±1% over temperature and line voltage variations.  
The HIP6004 provides simple, single feedback loop,  
voltage-mode control with fast transient response. It includes  
a 200kHz free-running triangle-wave oscillator that is  
adjustable from below 50kHz to over 1MHz. The error  
amplifier features a 15MHz gain-bandwidth product and  
6V/µs slew rate which enables high converter bandwidth for  
fast transient performance. The resulting PWM duty ratio  
ranges from 0% to 100%.  
• Power-Good Output Voltage Monitor  
• Over-Voltage and Over-Current Fault Monitors  
- Does Not Require Extra Current Sensing Element,  
Uses MOSFETs r  
DS(ON)  
• Small Converter Size  
- Constant Frequency Operation  
- 200kHz Free-Running Oscillator Programmable from  
50kHz to over 1MHz  
The HIP6004 monitors the output voltage with a window  
comparator that tracks the DAC output and issues a Power  
Good signal when the output is within ±10%. The HIP6004  
protects against over-current conditions by inhibiting PWM  
operation. Built-in over-voltage protection triggers an  
external SCR to crowbar the input supply. The HIP6004  
Applications  
Power Supply for Pentium®, Pentium Pro, PowerPC™ and  
Alpha™ Microprocessors  
High-Power 5V to 3.xV DC-DC Regulators  
Low-Voltage Distributed Power Supplies  
monitors the current by using the r  
of the upper  
DS(ON)  
MOSFET which eliminates the need for a current sensing  
resistor.  
Pinout  
HIP6004  
(SOIC)  
TOP VIEW  
Ordering Information  
TEMP.  
PKG.  
NO.  
o
PART NUMBER RANGE ( C)  
HIP6004CB 0 to 70  
This data sheet describes a pre-released product.  
PACKAGE  
20 Ld SOIC  
M20.3  
1
2
3
4
5
6
7
8
9
RT  
VSEN  
OCSET  
SS  
20  
19  
OVP  
18 VCC  
VID0  
17 LGATE  
16 PGND  
VID1  
VID2  
BOOT  
15  
VID3  
14 UGATE  
13 PHASE  
VID4  
12  
COMP  
PGOOD  
Alpha Micro™ is a trademark of Digital Computer Equipment Corporation.  
Pentium® is a registered trademark of Intel Corporation.  
PowerPC™ is a registered trademark of IBM.  
FB 10  
11 GND  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.  
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000  
1
HIP6004  
Typical Application  
+12V  
V
= +5V or +12V  
IN  
VCC  
PGOOD  
OCSET  
EN  
MONITOR AND  
PROTECTION  
SS  
BOOT  
OVP  
RT  
OSC  
UGATE  
PHASE  
VID0  
VID1  
VID2  
VID3  
VID4  
+V  
OUT  
HIP6004  
D/A  
LGATE  
PGND  
-
+
+
-
FB  
COMP  
GND  
VSEN  
Block Diagram  
VCC  
VSEN  
POWER-ON  
RESET (POR)  
110%  
+
-
PGOOD  
90%  
+
-
OVER-  
10µA  
115%  
VOLTAGE  
+
OVP  
SS  
-
SOFT-  
START  
+
-
OCSET  
OVER-  
CURRENT  
BOOT  
UGATE  
200µA  
4V  
REFERENCE  
PHASE  
PWM  
COMPARATOR  
VID0  
VID1  
VID2  
VID3  
VID4  
D/A  
CONVERTER  
(DAC)  
DACOUT  
GATE  
CONTROL  
LOGIC  
INHIBIT  
PWM  
+
+
-
-
ERROR  
AMP  
LGATE  
PGND  
GND  
FB  
COMP  
RT  
OSCILLATOR  
2
HIP6004  
Absolute Maximum Ratings  
Thermal Information  
o
Supply Voltage, V  
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +15V  
Thermal Resistance (Typical, Note 1)  
θJA ( C/W)  
CC  
Boot Voltage, V  
- V  
. . . . . . . . . . . . . . . . . . . . . . . . +15V  
BOOT  
PHASE  
SOIC Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . .  
Maximum Junction Temperature (Plastic Package) . . . . . . . .150 C  
Maximum Storage Temperature Range. . . . . . . . . . -65 C to 150 C  
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . .300 C  
118  
o
Input, Output or I/O Voltage . . . . . . . . . . . GND -0.3V to VCC +0.3V  
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Class 2  
o
o
o
Operating Conditions  
(SOIC - Lead Tips Only)  
Supply Voltage, V  
CC  
Ambient Temperature Range. . . . . . . . . . . . . . . . . . . . . 0 C to 70 C  
Junction Temperature Range. . . . . . . . . . . . . . . . . . . . 0 C to 125 C  
. . . . . . . . . . . . . . . . . . . . . . . . . . . +12V ±10%  
o
o
o
o
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the  
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.  
NOTE:  
1. θ is measured with the component mounted on a low effective thermal conductivity test board in free air. See Tech Brief 379 for details.  
JA  
Electrical Specifications Recommended Operating Conditions, Unless Otherwise Noted  
PARAMETER  
VCC SUPPLY CURRENT  
Nominal Supply  
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNITS  
I
UGATE and LGATE Open  
-
5
-
mA  
CC  
POWER-ON RESET  
Rising VCC Threshold  
Falling VCC Threshold  
V
V
= 4.5V  
-
8.2  
-
-
-
10.4  
V
V
V
OCSET  
= 4.5V  
-
-
OCSET  
Rising V  
OCSET  
Threshold  
1.26  
OSCILLATOR  
Free Running Frequency  
Total Variation  
RT = OPEN  
185  
-15  
-
200  
-
215  
+15  
-
kHz  
%
6k< RT to GND < 200kΩ  
RT = Open  
Ramp Amplitude  
V  
OSC  
1.9  
V
P-P  
REFERENCE AND DAC  
DACOUT Voltage Accuracy  
ERROR AMPLIFIER  
DC Gain  
-1.0  
-
+1.0  
%
-
-
-
88  
15  
6
-
-
-
dB  
Gain-Bandwidth Product  
Slew Rate  
GBW  
SR  
MHz  
V/µs  
COMP = 10pF  
GATE DRIVERS  
Upper Gate Source  
Upper Gate Sink  
I
V
- V  
= 12V, V  
UGATE  
= 6V  
350  
500  
5.5  
-
10  
-
mA  
UGATE  
BOOT  
PHASE  
R
I
= 0.3A  
-
300  
-
UGATE  
LGATE  
Lower Gate Source  
Lower Gate Sink  
I
VCC = 12V, V  
LGATE  
= 6V  
450  
3.5  
mA  
LGATE  
R
I
= 0.3A  
6.5  
LGATE  
LGATE  
PROTECTION  
Over-Voltage Trip (V  
/DACOUT)  
-
170  
60  
-
115  
200  
-
120  
%
µA  
mA  
µA  
SEN  
OCSET Current Source  
OVP Sourcing Current  
Soft Start Current  
I
V
V
= 4.5V  
230  
OCSET  
OCSET  
DC  
I
= 5.5V, V  
= 0V  
-
-
OVP  
SEN  
OVP  
I
10  
SS  
POWER GOOD  
Upper Threshold (V  
Lower Threshold (V  
/ DACOUT)  
/ DACOUT)  
VSEN Rising  
VSEN Falling  
106  
-
-
111  
%
%
%
V
SEN  
SEN  
89  
-
94  
-
Hysteresis (VSEN / DACOUT)  
PGOOD Voltage Low  
Upper and Lower Threshold  
= -5mA  
2
V
I
-
0.5  
-
PGOOD  
PGOOD  
3
HIP6004  
Typical Performance Curves  
80  
70  
60  
50  
40  
30  
20  
C
= 3300pF  
GATE  
1000  
R
PULLUP  
T
C
= C = C  
LOWER GATE  
UPPER  
TO +12V  
100  
10  
C
= 1000pF  
GATE  
R
PULLDOWN TO V  
SS  
T
C
= 10pF  
800  
GATE  
10  
0
10  
100  
SWITCHING FREQUENCY (kHz)  
1000  
100  
200  
300  
400  
500  
600  
700  
900 1000  
SWITCHING FREQUENCY (kHz)  
FIGURE 1. R RESISTANCE vs FREQUENCY  
FIGURE 2. BIAS SUPPLY CURRENT vs FREQUENCY  
T
VID0-4 (Pins 4-8)  
Functional Pin Description  
VID0-4 are the input pins to the 5-bit DAC. The states of  
these five pins program the internal voltage reference  
(DACOUT). The level of DACOUT sets the converter output  
voltage. It also sets the PGOOD and OVP thresholds. Table  
1 specifies DACOUT for the 32 combinations of DAC inputs.  
1
2
3
4
5
6
7
8
9
RT  
VSEN  
OCSET  
SS  
20  
19  
OVP  
18 VCC  
VID0  
17 LGATE  
16 PGND  
15 BOOT  
14 UGATE  
13 PHASE  
COMP (Pin 9) and FB (Pin 10)  
VID1  
COMP and FB are the available external pins of the error  
amplifier. The FB pin is the inverting input of the error  
amplifier and the COMP pin is the error amplifier output.  
These pins are used to compensate the voltage-control  
feedback loop of the converter.  
VID2  
VID3  
VID4  
12  
COMP  
PGOOD  
FB 10  
11 GND  
GND (Pin 11)  
Signal ground for the IC. All voltage levels are measured with  
respect to this pin.  
VSEN (Pin 1)  
This pin is connected to the converters output voltage. The  
PGOOD and OVP comparator circuits use this signal to  
report output voltage status and for overvoltage protection.  
PGOOD (Pin 12)  
PGOOD is an open collector output used to indicate the  
status of the converter output voltage. This pin is pulled low  
when the converter output is not within ±10% of the  
DACOUT reference voltage.  
OCSET (Pin 2)  
Connect a resistor (R  
OCSET  
) from this pin to the drain of the  
upper MOSFET. R  
, an internal 200µA current source  
OCSET  
PHASE (Pin 13)  
(I  
), and the upper MOSFET on-resistance (r  
OCS  
) set  
DS(ON)  
Connect the PHASE pin to the upper MOSFET source. This  
pin is used to monitor the voltage drop across the MOSFET  
for over-current protection. This pin also provides the return  
path for the upper gate drive.  
the converter over-current (OC) trip point according to the  
following equation:  
I
R  
OCSET  
OCS  
I
= -------------------------------------------  
PEAK  
r
DS(ON)  
UGATE (Pin 14)  
Connect UGATE to the upper MOSFET gate. This pin  
provides the gate drive for the upper MOSFET.  
An over-current trip cycles the soft-start function.  
SS (Pin 3)  
BOOT (Pin 15)  
Connect a capacitor from this pin to ground. This capacitor,  
along with an internal 10µA current source, sets the soft-  
start interval of the converter.  
This pin provides bias voltage to the upper MOSFET driver.  
A bootstrap circuit may be used to create a BOOT voltage  
suitable to drive a standard N-Channel MOSFET.  
4
HIP6004  
increasing width that charge the output capacitor(s). This  
PGND (Pin 16)  
interval of increasing pulse width continues to t . With sufficient  
output voltage, the clamp on the reference input controls the  
2
This is the power ground connection. Tie the lower MOSFET  
source to this pin.  
output voltage. This is the interval between t and t in Figure 3.  
2
3
LGATE (Pin 17)  
At t the SS voltage exceeds the DACOUT voltage and the  
3
Connect LGATE to the lower MOSFET gate. This pin  
provides the gate drive for the lower MOSFET.  
output voltage is in regulation. This method provides a rapid  
and controlled output voltage rise. The PGOOD signal toggles  
‘high’ when the output voltage (VSEN pin) is within ±5% of  
DACOUT. The 2% hysteresis built into the power good  
comparators prevents PGOOD oscillation due to nominal  
output voltage ripple.  
VCC (Pin 18)  
Provide a 12V bias supply for the chip to this pin.  
OVP (Pin 19)  
The OVP pin can be used to drive an external SCR in the  
event of an overvoltage condition.  
PGOOD  
(2V/DIV.)  
RT (Pin 20)  
This pin provides oscillator switching frequency adjustment.  
0V  
By placing a resistor (R ) from this pin to GND, the nominal  
T
200kHz switching frequency is increased according to the  
following equation:  
SOFT-START  
(1V/DIV.)  
6
5 10  
Fs 200kHz + --------------------  
OUTPUT  
VOLTAGE  
(R to GND)  
R (kΩ)  
T
T
(1V/DIV.)  
0V  
Conversely, connecting a pull-up resistor (R ) from this pin  
T
to VCC reduces the switching frequency according to the  
0V  
t
t
t
3
1
2
following equation:  
TIME (5ms/DIV.)  
7
4 10  
Fs 200kHz --------------------  
(R to 12V)  
T
R (kΩ)  
T
FIGURE 3. SOFT START INTERVAL  
Functional Description  
Over-Current Protection  
The over-current function protects the converter from a  
shorted output by using the upper MOSFETs on-resistance,  
Initialization  
The HIP6004 automatically initializes upon receipt of power.  
Special sequencing of the input supplies is not necessary.  
The Power-On Reset (POR) function continually monitors  
the input supply voltages. The POR monitors the bias  
r
to monitor the current. This method enhances the  
DS(ON)  
converter’s efficiency and reduces cost by eliminating a  
current sensing resistor.  
voltage at the VCC pin and the input voltage (V ) on the  
IN  
OCSET pin. The level on OCSET is equal to V less a fixed  
IN  
4V  
2V  
voltage drop (see over-current protection). The POR function  
initiates soft start operation after both input supply voltages  
exceed their POR thresholds. For operation with a single  
0V  
+12V power source, V and V  
+12V power source must exceed the rising V  
before POR initiates operation.  
are equivalent and the  
IN  
CC  
15A  
10A  
5A  
threshold  
CC  
Soft Start  
The POR function initiates the soft start sequence. An internal  
0A  
10µA current source charges an external capacitor (C ) on  
SS  
the SS pin to 4V. Soft start clamps the error amplifier output  
(COMP pin) and reference input (+ terminal of error amp) to the  
SS pin voltage. Figure 3 shows the soft start interval with  
TIME (20ms/DIV.)  
FIGURE 4. OVER-CURRENT OPERATION  
C
= 0.1µF. Initially the clamp on the error amplifier (COMP  
SS  
The over-current function cycles the soft-start function in a  
pin) controls the converter’s output voltage. At t in Figure 3, the  
1
hiccup mode to provide fault protection. A resistor (R  
)
OCSET  
SS voltage reaches the valley of the oscillator’s triangle wave.  
The oscillator’s triangular waveform is compared to the ramping  
error amplifier voltage. This generates PHASE pulses of  
programs the over-current trip level. An internal 200µA current  
sink develops a voltage across R that is referenced to  
OCSET  
. When the voltage across the upper MOSFET (also  
V
IN  
5
HIP6004  
referenced to V ) exceeds the voltage across R  
, the  
over-current function initiates a soft-start sequence. The soft-  
I
R  
OCSET  
IN OCSET  
OCSET  
I
= ---------------------------------------------------  
PEAK  
r
DS(ON)  
start function discharges C with a 10µA current sink and  
SS  
where I  
OCSET  
is the internal OCSET current source (200µA  
inhibits PWM operation. The soft-start function recharges C  
and PWM operation resumes with the error amplifier clamped  
to the SS voltage. Should an overload occur while recharging  
,
SS  
typical). The OC trip point varies mainly due to the MOSFETs  
variations. To avoid over-current tripping in the  
normal operating load range, find the R  
the equation above with:  
r
DS(ON)  
resistor from  
OCSET  
C
, the soft start function inhibits PWM operation while fully  
SS  
charging C to 4V to complete its cycle. Figure 4 shows this  
SS  
1. The maximum r  
2. The minimum I  
3. Determine I  
where I is the output inductor ripple current.  
For an equation for the ripple current see the section under  
component guidelines titled ‘Output Inductor Selection’.  
at the highest junction temperature.  
from the specification table.  
DS(ON)  
OCSET  
operation with an overload condition. Note that the inductor  
current increases to over 15A during the C charging interval  
SS  
for  
I
> I  
+ (∆I) ⁄ 2 ,  
PEAK  
PEAK  
OUT(MAX)  
and causes an over-current trip. The converter dissipates very  
little power with this method. The measured input power for the  
conditions of Figure 4 is 2.5W.  
The over-current function will trip at a peak inductor current  
(I  
determined by:  
PEAK)  
TABLE 1. OUTPUT VOLTAGE PROGRAM  
PIN NAME  
NOMINAL  
OUTPUT  
VOLTAGE  
DACOUT  
PIN NAME  
NOMINAL  
OUTPUT  
VOLTAGE  
DACOUT  
VID4  
0
VID3  
1
VID2  
1
VID1  
1
VID0  
1
VID4  
1
VID3  
1
VID2  
1
VID1  
1
VID0  
1
1.30  
1.35  
1.40  
1.45  
1.50  
1.55  
1.60  
1.65  
1.70  
1.75  
1.80  
1.85  
1.90  
1.95  
2.00  
2.05  
2.0  
2.1  
2.2  
2.3  
2.4  
2.5  
2.6  
2.7  
2.8  
2.9  
3.0  
3.1  
3.2  
3.3  
3.4  
3.5  
0
1
1
1
0
1
1
1
1
0
0
1
1
0
1
1
1
1
0
1
0
1
1
0
0
1
1
1
0
0
0
1
0
1
1
1
1
0
1
1
0
1
0
1
0
1
1
0
1
0
0
1
0
0
1
1
1
0
0
1
0
1
0
0
0
1
1
0
0
0
0
0
1
1
1
1
0
1
1
1
0
0
1
1
0
1
0
1
1
0
0
0
1
0
1
1
0
1
0
1
0
0
1
0
0
1
0
1
0
0
0
0
0
1
1
1
0
0
1
1
0
0
0
1
0
1
0
0
1
0
0
0
0
0
1
1
0
0
0
1
0
0
0
0
0
1
0
0
0
0
NOTE: 0 = connected to GND or V , 1 = OPEN.  
SS  
A small ceramic capacitor should be placed in parallel with  
to smooth the voltage across R in the  
presence of switching noise on the input voltage.  
VID pins. The output voltage should not be adjusted while  
the converter is delivering power. Remove input power  
before changing the output voltage. Adjusting the output  
voltage during operation could toggle the PGOOD signal  
and exercise the overvoltage protection.  
R
OCSET  
OCSET  
Output Voltage Program  
The output voltage of a HIP6004 converter is programmed  
The DAC function is a precision non-inverting summation  
amplifier shown in Figure 5. The resistor values shown are  
only approximations of the actual precision values used.  
Grounding any combination of the VID pins increases the  
DACOUT voltage. The ‘open’ circuit voltage on the VID pins  
is the band gap reference voltage, 1.26V.  
to discrete levels between 1.3V  
and 3.5V . The  
DC  
DC  
voltage identification (VID) pins program an internal voltage  
reference (DACOUT) with a 5-bit digital-to-analog converter  
(DAC). The level of DACOUT also sets the PGOOD and  
OVP thresholds. Table 1 specifies the DACOUT voltage for  
the 32 combinations of open or short connections on the  
6
HIP6004  
Figure 7 shows the circuit traces that require additional  
layout consideration. Use single point and ground plane  
construction for the circuits shown. Minimize any leakage  
BAND GAP  
REFERENCE  
1.26V  
current paths on the SS PIN and locate the capacitor, C  
ss  
close to the SS pin because the internal current source is  
only 10µA. Provide local V decoupling between VCC and  
12kΩ  
12kΩ  
CC  
GND pins. Locate the capacitor, C  
to the BOOT and PHASE pins.  
as close as practical  
3.6kΩ  
2.7kΩ  
5.4kΩ  
10.7kΩ  
BOOT  
ERROR  
AMPLIFIER  
VID4  
VID3  
VID2  
VID1  
VID0  
DACOUT  
+
-
+
-
COMP  
Feedback Compensation  
Figure 8 highlights the voltage-mode control loop for a  
synchronous-rectified buck converter. The output voltage  
1.7kΩ  
(V  
) is regulated to the Reference voltage level. The error  
OUT  
21.5kΩ  
DAC  
2.9kΩ  
amplifier (Error Amp) output (V ) is compared with the  
E/A  
FB  
oscillator (OSC) triangular wave to provide a pulse-width  
modulated (PWM) wave with an amplitude of V at the  
IN  
PHASE node. The PWM wave is smoothed by the output  
filter (L and C ).  
O
O
FIGURE 5. DAC FUNCTION SCHEMATIC  
+V  
IN  
BOOT  
C
Application Guidelines  
D1  
Q1  
L
O
BOOT  
V
Layout Considerations  
OUT  
PHASE  
VCC  
As in any high frequency switching converter, layout is very  
important. Switching current from one power device to another  
can generate voltage transients across the impedances of the  
interconnecting bond wires and circuit traces. These  
interconnecting impedances should be minimized by using  
wide, short printed circuit traces. The critical components  
should be located as close together as possible, using ground  
plane construction or single point grounding.  
HIP6004  
C
+12V  
SS  
Q2  
O
C
VCC  
C
SS  
GND  
FIGURE 7. PRINTED CIRCUIT BOARD SMALL SIGNAL  
LAYOUT GUIDELINES  
V
IN  
HIP6004  
V
IN  
DRIVER  
DRIVER  
OSC  
PWM  
L
O
COMPARATOR  
V
OUT  
UGATE  
Q1  
Q2  
L
O
V
OUT  
PHASE  
-
PHASE  
+
C
V  
O
OSC  
C
IN  
C
ESR  
(PARASITIC)  
LGATE  
PGND  
O
D2  
Z
FB  
V
E/A  
-
Z
IN  
+
REFERENCE  
RETURN  
ERROR  
AMP  
FIGURE 6. PRINTED CIRCUIT BOARD POWER AND  
GROUND PLANES OR ISLANDS  
DETAILED COMPENSATION COMPONENTS  
Z
FB  
V
OUT  
C2  
Figure 6 shows the critical power components of the  
converter. To minimize the voltage overshoot the  
interconnecting wires indicated by heavy lines should be  
part of ground or power plane in a printed circuit board. The  
components shown in Figure 6 should be located as close  
Z
IN  
C1  
C3  
R3  
R2  
R1  
COMP  
together as possible. Please note that the capacitors C  
FB  
IN  
-
+
and C each represent numerous physical capacitors.  
O
Locate the HIP6004 within 3 inches of the MOSFETs, Q1  
and Q2. The circuit traces for the MOSFETs’ gate and  
source connections from the HIP6004 must be sized to  
handle up to 1A peak current.  
HIP6004  
DACOUT  
FIGURE 8. VOLTAGE-MODE BUCK CONVERTER  
COMPENSATION DESIGN  
7
HIP6004  
The modulator transfer function is the small-signal transfer  
function of V /V . This function is dominated by a DC  
100  
80  
60  
40  
20  
0
OUT E/A  
Gain and the output filter (L and C ), with a double pole  
F
F
P1  
F
F
Z2  
Z1  
P2  
O
O
break frequency at F and a zero at F  
. The DC Gain of  
LC  
ESR  
OPEN LOOP  
ERROR AMP GAIN  
the modulator is simply the input voltage (V ) divided by the  
IN  
peak-to-peak oscillator voltage V  
.
OSC  
20LOG  
(R /R )  
Modulator Break Frequency Equations  
2
1
20LOG  
(V /V  
)
IN OSC  
1
1
MODULATOR  
GAIN  
F
= --------------------------------------  
F
= ---------------------------------------  
COMPENSATION  
GAIN  
LC  
ESR  
2π • ESR C  
2π •  
L C  
O O  
O
-20  
-40  
-60  
CLOSED LOOP  
GAIN  
The compensation network consists of the error amplifier  
(internal to the HIP6004) and the impedance networks Z  
F
LC  
F
IN  
ESR  
100K  
FREQUENCY (Hz)  
and Z . The goal of the compensation network is to provide  
FB  
10  
100  
1K  
10K  
1M  
10M  
a closed loop transfer function with the highest 0dB crossing  
frequency (f  
) and adequate phase margin. Phase margin  
and  
0dB  
FIGURE 9. ASYMPTOTIC BODE PLOT OF CONVERTER GAIN  
is the difference between the closed loop phase at f  
0dB  
180 degrees. The equations below relate the compensation  
network’s poles, zeros and gain to the components (R1, R2,  
R3, C1, C2, and C3) in Figure 8. Use these guidelines for  
locating the poles and zeros of the compensation network:  
Component Selection Guidelines  
Output Capacitor Selection  
An output capacitor is required to filter the output and supply  
the load transient current. The filtering requirements are a  
function of the switching frequency and the ripple current.  
The load transient requirements are a function of the slew  
rate (di/dt) and the magnitude of the transient load current.  
These requirements are generally met with a mix of  
capacitors and careful layout.  
1. Pick Gain (R2/R1) for desired converter bandwidth  
ST  
2. Place 1 Zero Below Filter’s Double Pole (~75% F  
ND  
)
LC  
3. Place 2  
Zero at Filter’s Double Pole  
ST  
4. Place 1 Pole at the ESR Zero  
ND  
5. Place 2  
Pole at Half the Switching Frequency  
6. Check Gain against Error Amplifier’s Open-Loop Gain  
7. Estimate Phase Margin - Repeat if Necessary  
Modern microprocessors produce transient load rates above  
1A/ns. High frequency capacitors initially supply the transient  
and slow the current load rate seen by the bulk capacitors.  
The bulk filter capacitor values are generally determined by  
the ESR (effective series resistance) and voltage rating  
requirements rather than actual capacitance requirements.  
Compensation Break Frequency Equations  
1
1
F
F
= ----------------------------------  
2π • R2 C1  
F
F
= -----------------------------------------------------  
Z1  
P1  
C1 C2  
----------------------  
2π • R  
2
C1 + C2  
1
High frequency decoupling capacitors should be placed as  
close to the power pins of the load as physically possible. Be  
careful not to add inductance in the circuit board wiring that  
could cancel the usefulness of these low inductance  
components. Consult with the manufacturer of the load on  
specific decoupling requirements. For example, Intel  
recommends that the high frequency decoupling for the  
Pentium Pro be composed of at least forty (40) 1µF ceramic  
capacitors in the 1206 surface-mount package.  
= 2π • (R1 + R3) • C3  
= ----------------------------------  
Z2  
P2  
2π • R3 C3  
Figure 9 shows an asymptotic plot of the DC-DC converter’s  
gain vs. frequency. The actual Modulator Gain has a high gain  
peak due to the high Q factor of the output filter and is not  
shown in Figure 9. Using the above guidelines should give a  
Compensation Gain similar to the curve plotted. The open  
loop error amplifier gain bounds the compensation gain.  
Check the compensation gain at F with the capabilities of  
P2  
the error amplifier. The Closed Loop Gain is constructed on  
the log-log graph of Figure 9 by adding the Modulator Gain (in  
dB) to the Compensation Gain (in dB). This is equivalent to  
multiplying the modulator transfer function to the  
Use only specialized low-ESR capacitors intended for  
switching-regulator applications for the bulk capacitors. The  
bulk capacitor’s ESR will determine the output ripple voltage  
and the initial voltage drop after a high slew-rate transient. An  
aluminum electrolytic capacitor’s ESR value is related to the  
case size with lower ESR available in larger case sizes.  
However, the equivalent series inductance (ESL) of these  
capacitors increases with case size and can reduce the  
usefulness of the capacitor to high slew-rate transient loading.  
Unfortunately, ESL is not a specified parameter. Work with  
your capacitor supplier and measure the capacitor’s  
compensation transfer function and plotting the gain.  
The compensation gain uses external impedance networks  
Z
and Z to provide a stable, high bandwidth (BW) overall  
FB  
IN  
loop. A stable control loop has a gain crossing with  
-20dB/decade slope and a phase margin greater than 45  
degrees. Include worst case component variations when  
determining phase margin.  
impedance with frequency to select a suitable component. In  
8
HIP6004  
most cases, multiple electrolytic capacitors of small case size  
perform better than a single large case capacitor.  
current required by the circuit. The capacitor voltage rating  
should be at least 1.25 times greater than the maximum  
input voltage and a voltage rating of 1.5 times is a  
conservative guideline. The RMS current rating requirement  
for the input capacitor of a buck regulator is approximately  
1/2 the DC load current.  
Output Inductor Selection  
The output inductor is selected to meet the output voltage  
ripple requirements and minimize the converter’s response  
time to the load transient. The inductor value determines the  
converter’s ripple current and the ripple voltage is a function  
of the ripple current. The ripple voltage and current are  
approximated by the following equations:  
For a through hole design, several electrolytic capacitors  
(Panasonic HFQ series or Nichicon PL series or Sanyo  
MV-GX or equivalent) may be needed. For surface mount  
designs, solid tantalum capacitors can be used, but caution  
must be exercised with regard to the capacitor surge current  
rating. These capacitors must be capable of handling the  
surge-current at power-up. The TPS series available from  
AVX, and the 593D series from Sprague are both surge  
current tested.  
V
- V  
OUT  
V
OUT  
IN  
Fs x L  
V  
OUT  
= I x ESR  
I =  
V
IN  
Increasing the value of inductance reduces the ripple current  
and voltage. However, the large inductance values reduce  
the converter’s response time to a load transient.  
MOSFET Selection/Considerations  
One of the parameters limiting the converter’s response to a  
load transient is the time required to change the inductor  
current. Given a sufficiently fast control loop design, the  
HIP6004 will provide either 0% or 100% duty cycle in  
response to a load transient. The response time is the time  
required to slew the inductor current from an initial current  
value to the transient current level. During this interval the  
difference between the inductor current and the transient  
current level must be supplied by the output capacitor.  
Minimizing the response time can minimize the output  
capacitance required.  
The HIP6004 requires 2 N-Channel power MOSFETs.  
These should be selected based upon r  
, gate supply  
DS(ON)  
requirements, and thermal management requirements.  
In high-current applications, the MOSFET power dissipation,  
package selection and heatsink are the dominant design  
factors. The power dissipation includes two loss components;  
conduction loss and switching loss. The conduction losses are  
the largest component of power dissipation for both the upper  
and the lower MOSFETs. These losses are distributed  
between the two MOSFETs according to duty factor (see the  
equations below). Only the upper MOSFET has switching  
losses, since the Schottky rectifier clamps the switching node  
before the synchronous rectifier turns on. These equations  
assume linear voltage-current transitions and do not  
The response time to a transient is different for the  
application of load and the removal of load. The following  
equations give the approximate response time interval for  
application and removal of a transient load:  
adequately model power loss due the reverse-recovery of the  
lower MOSFETs body diode. The gate-charge losses are  
dissipated by the HIP6004 and don't heat the MOSFETs.  
However, large gate-charge increases the switching interval,  
L x I  
L x I  
TRAN  
TRAN  
OUT  
t
=
t
=
FALL  
RISE  
V
- V  
V
OUT  
IN  
where: I  
is the transient load current step, t  
is the  
is the  
TRAN  
RISE  
t
which increases the upper MOSFET switching losses.  
response time to the application of load, and t  
SW  
FALL  
Ensure that both MOSFETs are within their maximum junction  
temperature at high ambient temperature by calculating the  
temperature rise according to package thermal-resistance  
specifications. A separate heatsink may be necessary  
depending upon MOSFET power, package type, ambient  
temperature and air flow.  
response time to the removal of load. With a +5V input  
source, the worst case response time can be either at the  
application or removal of load and dependent upon the  
DACOUT setting. Be sure to check both of these equations  
at the minimum and maximum output levels for the worst  
case response time. With a +12V input, and output voltage  
level equal to DACOUT, t  
FALL  
is the longest response time.  
1
2
2
P
= Io x r  
x D +  
Io x V x t x F  
IN SW S  
UPPER  
DS(ON)  
Input Capacitor Selection  
2
P
= Io x r  
x (1 - D)  
LOWER  
DS(ON)  
Use a mix of input bypass capacitors to control the voltage  
overshoot across the MOSFETs. Use small ceramic  
capacitors for high frequency decoupling and bulk capacitors  
to supply the current needed each time Q1 turns on. Place the  
small ceramic capacitors physically close to the MOSFETs  
and between the drain of Q1 and the source of Q2.  
Where: D is the duty cycle = V  
OUT  
/ V ,  
IN  
t
is the switching interval, and  
SW  
F
is the switching frequency.  
S
Standard-gate MOSFETs are normally recommended for  
use with the HIP6004. However, logic-level gate MOSFETs  
can be used under special circumstances. The input voltage,  
upper gate drive level, and the MOSFETs absolute gate-to-  
source voltage rating determine whether logic-level  
MOSFETs are appropriate.  
The important parameters for the bulk input capacitor are the  
voltage rating and the RMS current rating. For reliable  
operation, select the bulk capacitor with voltage and current  
ratings above the maximum input voltage and largest RMS  
9
HIP6004  
+12V  
+12V  
D
BOOT  
+5V OR LESS  
V
CC  
+5V or +12V  
+ V  
-
D
VCC  
BOOT  
BOOT  
HIP6004  
HIP6004  
C
BOOT  
Q1  
Q1  
UGATE  
PHASE  
UGATE  
PHASE  
NOTE:  
G-S V -5V  
NOTE:  
G-S V -V  
V
CC  
V
CC  
D
D2  
Q2  
D2  
Q2  
-
LGATE  
PGND  
LGATE  
PGND  
-
+
+
NOTE:  
NOTE:  
V
G-S V  
CC  
VG-S V  
CC  
GND  
GND  
IGURE 11. UPPER GATE DRIVE - DIRECT V  
CC  
DRIVE OPTION  
FIGURE 10. UPPER GATE DRIVE - BOOTSTRAP OPTION  
Figure 10 shows the upper gate drive (BOOT pin) supplied  
Schottky Selection  
by a bootstrap circuit from V . The boot capacitor, C  
CC BOOT  
Rectifier D2 is a clamp that catches the negative inductor  
swing during the dead time between turning off the lower  
MOSFET and turning on the upper MOSFET. The diode must  
be a Schottky type to prevent the lossy parasitic MOSFET  
body diode from conducting. It is acceptable to omit the diode  
and let the body diode of the lower MOSFET clamp the  
negative inductor swing, but efficiency will drop one or two  
percent as a result. The diode's rated reverse breakdown  
voltage must be greater than the maximum input voltage.  
develops a floating supply voltage referenced to the PHASE  
pin. This supply is refreshed each cycle to a voltage of VCC  
less the boot diode drop (V ) when the lower MOSFET, Q2  
D
turns on. Logic-level MOSFETs can only be used if the  
MOSFETs absolute gate-to-source voltage rating exceeds  
the maximum voltage applied to V  
CC  
.
Figure 11 shows the upper gate drive supplied by a direct  
connection to V . This option should only be used in  
CC  
converter systems where the main input voltage is +5V  
or  
DC  
less. The peak upper gate-to-source voltage is approximately  
less the input supply. For +5V main power and +12VDC  
V
CC  
for the bias, the gate-to-source voltage of Q1 is 7V. A logic-  
level MOSFET is a good choice for Q1 and a logic-level  
MOSFET can be used for Q2 if its absolute gate-to-source  
voltage rating exceeds the maximum voltage applied to V  
.
CC  
10  
HIP6004  
HIP6004 DC-DC Converter Application Circuit  
Figure 12 shows an application circuit of a DC-DC Converter  
for an Intel Pentium Pro microprocessor. Detailed  
information on the circuit, including a complete Bill-of-  
Materials and circuit board description, can be found in  
Application Note AN9672. Intersil AnswerFAX (321-724-  
7800) doc. #99672.  
L1 - 1µH  
F1  
+5V  
V
=
OR  
IN  
+12V  
C1  
5x 1000µF  
2x 1µF  
2N6394  
+12V  
2K  
D1  
0.1µF  
1000pF  
VCC  
OVP  
19  
18  
1K  
2
12  
15  
OCSET  
PGOOD  
BOOT  
MONITOR  
AND  
PROTECTION  
SS  
3
1
VSEN  
0.1µF  
RT 20  
0.1µF  
OSC  
14  
13  
UGATE  
PHASE  
Q1  
Q2  
L2  
3µH  
4
VID0  
5
6
7
8
HIP6004  
+V  
VID1  
VID2  
VID3  
VID4  
O
D/A  
D2  
17  
16  
C
LGATE  
PGND  
-
O
+
+
-
9x 1000µF  
FB  
10  
9
11  
COMP  
GND  
2.2nF  
8.2nF  
20K  
0.1µF  
15  
1.33K  
Component Selection Notes;  
C
- 9 Each 1000µF 6.3W VDC, Sanyo MV-GX or Equivalent  
0
C1 - 5 Each 330µF 25W VDC, Sanyo MV-GX or Equivalent  
L2 - Core: Micrometals T50-52B; Each Winding: 10 Turns of 16AWG  
L1 - Core: Micrometals T50-52; Winding: 5 Turns of 18AWG  
D1 - 1N4148 or Equivalent  
D2 - 3A, 40V Schottky, Motorola MBR340 or Equivalent  
Q1, Q2 - Intersil MOSFET; RFP70N03  
FIGURE 12. PENTIUM PRO DC-DC CONVERTER  
11  
HIP6004  
Small Outline Plastic Packages (SOIC)  
M20.3 (JEDEC MS-013-AC ISSUE C)  
N
20 LEAD WIDE BODY SMALL OUTLINE PLASTIC PACKAGE  
INDEX  
0.25(0.010)  
M
B M  
H
AREA  
INCHES  
MIN MAX  
MILLIMETERS  
E
SYMBOL  
MIN  
2.35  
0.10  
0.33  
0.23  
12.60  
7.40  
MAX  
2.65  
0.30  
0.51  
0.32  
13.00  
7.60  
NOTES  
-B-  
A
A1  
B
C
D
E
e
0.0926 0.1043  
0.0040 0.0118  
-
-
1
2
3
L
0.013  
0.0200  
9
SEATING PLANE  
A
0.0091 0.0125  
0.4961 0.5118  
0.2914 0.2992  
0.050 BSC  
-
-A-  
o
3
h x 45  
D
4
-C-  
1.27 BSC  
-
α
H
h
0.394  
0.010  
0.016  
0.419  
0.029  
0.050  
10.00  
0.25  
0.40  
10.65  
0.75  
1.27  
-
e
A1  
C
5
B
0.10(0.004)  
L
6
0.25(0.010) M  
C
A M B S  
N
α
20  
20  
7
o
o
o
o
0
8
0
8
-
NOTES:  
Rev. 0 12/93  
1. Symbols are defined in the “MO Series Symbol List” in Section 2.2 of  
Publication Number 95.  
2. Dimensioning and tolerancing per ANSI Y14.5M-1982.  
3. Dimension “D” does not include mold flash, protrusions or gate burrs.  
Mold flash, protrusion and gate burrs shall not exceed 0.15mm (0.006  
inch) per side.  
4. DimensionEdoesnotincludeinterleadflashorprotrusions. Interlead  
flash and protrusions shall not exceed 0.25mm (0.010 inch) per side.  
5. The chamfer on the body is optional. If it is not present, a visual index  
feature must be located within the crosshatched area.  
6. “L” is the length of terminal for soldering to a substrate.  
7. “N” is the number of terminal positions.  
8. Terminal numbers are shown for reference only.  
9. The lead width “B”, as measured 0.36mm (0.014 inch) or greater  
above the seating plane, shall not exceed a maximum value of  
0.61mm (0.024 inch)  
10. Controlling dimension: MILLIMETER. Converted inch dimensions  
are not necessarily exact.  
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.  
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-  
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and  
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result  
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.  
For information regarding Intersil Corporation and its products, see web site www.intersil.com  
Sales Office Headquarters  
NORTH AMERICA  
EUROPE  
ASIA  
Intersil Corporation  
Intersil SA  
Mercure Center  
100, Rue de la Fusee  
1130 Brussels, Belgium  
TEL: (32) 2.724.2111  
FAX: (32) 2.724.22.05  
Intersil (Taiwan) Ltd.  
7F-6, No. 101 Fu Hsing North Road  
Taipei, Taiwan  
Republic of China  
TEL: (886) 2 2716 9310  
FAX: (886) 2 2715 3029  
P. O. Box 883, Mail Stop 53-204  
Melbourne, FL 32902  
TEL: (321) 724-7000  
FAX: (321) 724-7240  
12  

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