HFA1145MJ/883 [INTERSIL]
High Speed, Low Power, Current Feedback Video Operational Amplifier with Output Disable; 高速,低功耗,输出禁用电流反馈型视频运算放大器型号: | HFA1145MJ/883 |
厂家: | Intersil |
描述: | High Speed, Low Power, Current Feedback Video Operational Amplifier with Output Disable |
文件: | 总5页 (文件大小:30K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
HFA1145/883
High Speed, Low Power, Current Feedback Video
Operational Amplifier with Output Disable
June 1994
Features
Description
• This Circuit is Processed in Accordance to MIL-STD- The HFA1145/883 is a high speed, low power current
883 and is Fully Conformant Under the Provisions of feedback amplifier built with Intersil’ proprietary
Paragraph 1.2.1.
complementary bipolar UHF-1 process.
• Low Supply Current. . . . . . . . . . . . . . . . . . 5.9mA (Typ) This amplifier features a TTL/CMOS compatible disable
control, pin 8, which when pulled low, reduces the supply
current and forces the output into a high impedance state.
• Wide -3dB Bandwidth . . . . . . . . . . . . . . . 360MHz (Typ)
This allows easy implementation of simple, low power video
switching and routing systems. Component and composite
video systems also benefit from this op amp’s excellent gain
flatness, and good differential gain and phase specifications.
• High Slew Rate. . . . . . . . . . . . . . . . . . . . 1000V/µs (Typ)
• Excellent Gain Flatness (to 50MHz) . . . . .±0.07dB (Typ)
• Excellent Differential Gain . . . . . . . . . . . . . 0.02% (Typ)
• Excellent Differential Phase . . . . . . . . . 0.03 Deg. (Typ)
• High Output Current . . . . . . . . . . . . . . . . . . 60mA (Typ)
• Output Enable / Disable Time . . . . . . 180ns/35ns (Typ)
Multiplexed A/D applications will also find the HFA1145/883
useful as the A/D driver/multiplexer.
The HFA1145/883 is a low power, high performance upgrade
for the CLC410.
Applications
Ordering Information
• Multiplexed Flash A/D Driver
• RGB Multiplexers / Preamps for Multimedia Systems
• Video Switching and Routing
• Pulse and Video Amplifiers
• Wideband Amplifiers
TEMPERATURE
PART NUMBER
RANGE
PACKAGE
o
o
HFA1145MJ/883
-55 C to +125 C
8 Lead CerDIP
• RF/IF Signal Processing
• Medical Imaging Systems
Pinout
HFA1145/883
(CERDIP)
TOP VIEW
NC
-IN
+IN
V-
1
2
3
4
8
7
6
5
DISABLE
V+
-
+
OUT
NC
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
Spec Number 511116-883
File Number 3726
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 19939-214
Specifications HFA1145/883
Absolute Maximum Ratings
Thermal Information
Voltage Between V+ and V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12V
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Voltage at Either Input Terminal . . . . . . . . . . . . . . . . . . . . . . V+ to V- Maximum Package Power Dissipation at +75 C
Thermal Resistance
CerDIP Package . . . . . . . . . . . . . . . . . 115 C/W
θ
θ
JC
30 C/W
JA
o
o
o
Output Current (Note 1) . . . . . . . . . . . . . . . . Short Circuit Protected
Output Current (50% Duty Cycle, Note 1) . . . . . . . . . . . . . . . .60mA
Junction Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175 C
CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.87W
o
Package Power Dissipation Derating Factor above +75 C
o
o
CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.7mW/ C
ESD Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .> 2000V
o
o
Storage Temperature Range . . . . . . . . . . . . . .-65 C ≤ T ≤ +150 C
A
o
Lead Temperature (Soldering 10s). . . . . . . . . . . . . . . . . . . . +300 C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Operating Conditions
Operating V
(±V ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±5V
R ≥ 50Ω
L
SUPPLY
S
o
o
Operating Temperature Range. . . . . . . . . . . . .-55 C ≤ T ≤ +125 C
A
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Tested at: V
= ±5V, A = +1, R = 510Ω, R
= 0Ω, R = 100Ω, V
= 0V, DIS = Floated, Unless Otherwise Specified.
SUPPLY
V
F
SOURCE
L
OUT
LIMITS
GROUP A
PARAMETERS
SYMBOL
CONDITIONS
SUBGROUPS
TEMPERATURE
MIN
-5
MAX
UNITS
mV
o
Input Offset Voltage
V
V
= 0V
1
2, 3
1
+25 C
5
10
-
IO
CM
o
o
+125 C, -55 C
-10
47
mV
o
Common Mode
Rejection Ratio
CMRR
∆V
= ±1.8V
V+ = 3.2V, V- = -6.8V
V+ = 6.8V, V- = -3.2V
+25 C
dB
CM
o
2
+125 C
44
-
dB
o
∆V
= ±1.2V
3
-55 C
44
-
dB
CM
V+ = 3.8V, V- = -6.2V
V+ = 6.2V, V- = -3.8V
o
Power Supply
Rejection Ratio
PSRRP ∆V
= ±1.8V
1
2
+25 C
50
46
-
-
dB
dB
SUPPLY
V+ = 6.8V, V- = -5V
V+ = 3.2V, V- = -5V
o
+125 C
o
∆V
= ±1.2V
3
-55 C
46
-
dB
SUPPLY
V+ = 6.2V, V- = -5V
V+ = 3.8V, V- = -5V
o
PSRRN ∆V
= ±1.8V
1
2
+25 C
50
46
-
-
dB
dB
SUPPLY
V+ = 5V, V- = -6.8V
V+ = 5V, V- = -3.2V
o
+125 C
o
∆V
= ±1.2V
3
-55 C
46
-
dB
SUPPLY
V+ = 5V, V- = -6.2V
V+ = 5V, V- = -3.8V
o
Non-Inverting Input (+IN)
Current
I
V
= 0V
CM
1
2, 3
1
+25 C
-15
-25
-
15
25
µA
µA
BSP
o
o
+125 C, -55 C
o
+IN Current Common
Mode Sensitivity
CMS
∆V
= ±1.8V
+25 C
1.25
2.85
µA/V
µA/V
IBP
CM
V+ = 3.2V, V- = -6.8V
V+ = 6.8V, V- = -3.2V
o
2
+125 C
-
o
∆V
= ±1.2V
3
-55 C
-
2.85
µA/V
CM
V+ = 3.8V, V- = -6.2V
V+ = 6.2V, V- = -3.8V
o
+IN Resistance
+R
Note 2
1
+25 C
800
350
-
-
kΩ
kΩ
IN
o
o
2, 3
+125 C, -55 C
Spec Number 511116-883
3-215
Specifications HFA1145/883
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
Device Tested at: V
= ±5V, A = +1, R = 510Ω, R
= 0Ω, R = 100Ω, V
= 0V, DIS = Floated, Unless Otherwise Specified.
SUPPLY
V
F
SOURCE
L
OUT
LIMITS
GROUP A
PARAMETERS
SYMBOL
CONDITIONS
SUBGROUPS
TEMPERATURE
MIN
MAX
UNITS
µA/V
o
+IN Current Power
Supply Sensitivity
PPSS
∆V
= ±1.8V
1
2
+25 C
-
-
1
3
IBP
SUPPLY
V+ = 6.8V, V- = -5V
V+ = 3.2V, V- = -5V
o
+125 C
µA/V
o
∆V
= ±1.2V
3
-55 C
-
3
µA/V
SUPPLY
V+ = 6.2V, V- = -5V
V+ = 3.8V, V- = -5V
o
NPSS
∆V
= ±1.8V
1
2
+25 C
-
-
1
3
µA/V
µA/V
IBP
SUPPLY
V+ = 5V, V- = -6.8V
V+ = 5V, V- = -3.2V
o
+125 C
o
∆V
= ±1.2V
3
-55 C
-
3
µA/V
SUPPLY
V+ = 5V, V- = -6.2V
V+ = 5V, V- = -3.8V
o
Inverting Input (-IN)
Current
I
V
= 0V
CM
1
2, 3
1
+25 C
-7.5
7.5
25
6
µA
µA
BSN
o
o
+125 C, -55 C
-25
o
-IN Current Common
Mode Sensitivity
CMS
∆V
= ±1.8V
+25 C
-
-
µA/V
µA/V
IBN
CM
V+ = 3.2V, V- = -6.8V
V+ = 6.8V, V- = -3.2V
o
2
+125 C
8
o
∆V
= ±1.2V
3
-55 C
-
8
µA/V
CM
V+ = 3.8V, V- = -6.2V
V+ = 6.2V, V- = -3.8V
o
-IN Current Power
Supply Sensitivity
PPSS
∆V
= ±1.8V
1
2
+25 C
-
-
5
8
µA/V
µA/V
IBN
SUPPLY
V+ = 6.8V, V- = -5V
V+ = 3.2V, V- = -5V
o
+125 C
o
∆V
= ±1.2V
3
-55 C
-
8
µA/V
SUPPLY
V+ = 6.2V, V- = -5V
V+ = 3.8V, V- = -5V
o
NPSS
∆V
= ±1.8V
1
2
+25 C
-
-
5
8
µA/V
µA/V
IBN
SUPPLY
V+ = 5V, V- = -6.8V
V+ = 5V, V- = -3.2V
o
+125 C
o
∆V
= ±1.2V
3
-55 C
-
8
µA/V
SUPPLY
V+ = 5V, V- = -6.2V
V+ = 5V, V- = -3.8V
o
Output Voltage Swing
Output Voltage Swing
V
V
A = -1
V
V
V
V
V
V
V
V
V
V
= -3.2V
= -3V
1
2, 3
1
+25 C
3
2.8
-
-
-
V
V
OP100
V
IN
IN
IN
IN
IN
IN
IN
IN
IN
IN
R = 100Ω
o
o
L
+125 C, -55 C
o
A = -1
=+3.2V
= +3V
+25 C
-3
-2.8
-
V
ON100
V
R = 100Ω
o
o
L
2, 3
1
+125 C, -55 C
-
V
o
V
A = -1
= -2.7V
= -2.25V
= -2.25V
= +2.7V
= +2.25V
= +2.25V
+25 C
2.5
2.0
1.4
-
V
OP50
V
R = 50Ω
o
L
2
+125 C
-
V
o
3
-55 C
-
V
o
V
A = -1
1
+25 C
-2.5
-2.0
-1.4
-
V
ON50
V
R = 50Ω
o
L
2
+125 C
-
V
o
3
-55 C
-
V
o
Output Current
+I
Note 3
Note 3
1
+25 C
50
40
28
-
mA
mA
mA
mA
mA
mA
OUT
o
2
+125 C
-
o
3
-55 C
-
o
-I
1
+25 C
-50
-40
-28
OUT
o
2
+125 C
-
o
3
-55 C
-
Spec Number 511116-883
3-216
Specifications HFA1145/883
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
Device Tested at: V
= ±5V, A = +1, R = 510Ω, R
= 0Ω, R = 100Ω, V
= 0V, DIS = Floated, Unless Otherwise Specified.
SUPPLY
V
F
SOURCE
L
OUT
LIMITS
GROUP A
PARAMETERS
Quiescent Power
SYMBOL
CONDITIONS
SUBGROUPS
TEMPERATURE
MIN
5.6
5.2
-6.1
-6.5
-
MAX
6.1
6.5
-5.6
-5.2
4
UNITS
mA
mA
mA
mA
mA
mA
mA
mA
µA
µA
µA
µA
µA
µA
V
o
I
R = 100Ω
1
2, 3
1
+25 C
CC
L
Supply Current
o
o
+125 C, -55 C
o
I
R = 100Ω
+25 C
EE
L
o
o
2, 3
1
+125 C, -55 C
o
Disabled Power
Supply Current
DISI
DISI
R = 100Ω, V
= 0V
= 0V
+25 C
CC
EE
L
DIS
DIS
o
o
2, 3
1
+125 C, -55 C
-
4
o
R = 100Ω, V
+25 C
-4
-4
-10
-10
-
-
L
o
o
2, 3
1
+125 C, -55 C
-
o
Disabled Output
Leakage Current
DOLC
DILLC
DILHC
DILLV
DILHV
V
V
= 0V,
= ±2.5V,V
+25 C
10
10
200
200
15
15
0.8
0.8
-
DIS
_
+
=
2.5V
o
o
IN
OUT
2, 3
1
+125 C, -55 C
o
Disable Input
Current
V
= 0V
+25 C
DIS
o
o
2, 3
1
+125 C, -55 C
-
o
V
= 5V
+25 C
-
DIS
o
o
2, 3
1
+125 C, -55 C
-
o
Disable Input
Logic Levels
+25 C
-
o
o
2, 3
1, 2
3
+125 C, -55 C
-
V
o
o
+25 C, +125 C
2.0
2.4
V
o
-55 C
-
V
NOTES:
1. Output is short circuit protected to ground. Brief short circuits to ground will not degrade reliability, however continuous (100% duty cycle)
output current must not exceed 30mA for maximum reliability.
2. Guaranteed from +IN Common Mode Rejection Test, by: +R = 1/CMS
.
IBP
IN
3. Guaranteed from V
Test with R = 50Ω, by: I
= V
/50Ω.
OUT
OUT
L
OUT
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
TABLE 4. ELECTRICAL TEST REQUIREMENTS
Table 2 Intentionally Left Blank.
Table 3 Intentionally Left Blank.
MIL-STD-883 TEST REQUIREMENTS
SUBGROUPS (SEE TABLE 1)
Interim Electrical Parameters (Pre Burn-In)
Final Electrical Test Parameters
Group A Test Requirements
1
1 (Note 1), 2, 3
1, 2, 3
Groups C and D Endpoints
1
NOTE:
1. PDA applies to Subgroup 1 only.
Spec Number 511116-883
3-217
HFA1145/883
Die Characteristics
DIE DIMENSIONS:
59 x 58.2 x 19 mils ± 1 mils
1500 x 1480 x 483µm ± 25.4µm
METALLIZATION:
Type: Metal 1: AICu(2%)/TiW
Thickness: Metal 1: 8kÅ ± 0.4kÅ
Type: Metal 2: AICu(2%)
Thickness: Metal 2: 16kÅ ± 0.8kÅ
GLASSIVATION:
Type: Nitride
Thickness: 4kÅ ± 0.5kÅ
SUBSTRATE POTENTIAL (Powered Up): Floating (Recommend Connection to V-)
WORST CASE CURRENT DENSITY: TBD
TRANSISTOR COUNT: 75
Metallization Mask Layout
HFA1145/883
-IN
V+
OUT
+IN
V-
OPTIONAL
GND (NOTE)
NOTE: This pad is not bonded out on packaged units. Die users may set a GND reference, via this pad, to ensure the TTL compatibility
of the DIS input when using asymmetrical supplies (e.g. V+ = 10V, V- = 0V).
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate
and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
Spec Number 511116-883
3-218
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