HA4-5177/883 [INTERSIL]
Ultra Low Offset Voltage Operational Amplifier; 超低失调电压运算放大器器
| 型号： | HA4-5177/883 |
| 厂家： | 
Intersil |
| 描述： | Ultra Low Offset Voltage Operational Amplifier |
| 文件： | 总5页 (文件大小：137K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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1
Ultra Low Offset Voltage Operational Amplifier
November 2004
Features
Description
• This Circuit is Processed in Accordance to MIL-STD- The HA-5177/883 is a monolithic, all bipolar, precision oper-
883 and is Fully Conformant Under the Provisions of ational amplifier, utilizing Intersil Dielectric Isolation and
Paragraph 1.2.1.
advance processing techniques. This design features a com-
bination of precision input characteristics, wide gain band-
width (2MHz) and high speed (0.5V/µs min) and is an
improved version of the HA-5135/883.
• Low Offset Voltage. . . . . . . . . . . . . . . . . . . . .60µV (Max)
10µV (Typ)
• Low Offset Voltage Drift . . . . . . . . . . . . 0.6µV/oC (Max)
0.1µV/oC (Typ)
The HA-5177/883 uses advanced matching techniques and
laser trimming to produce low offset voltage (10µV typ, 60µV
max) and low offset voltage drift (0.1µV/oC typ, 0.6µV/oC
max). This design also features low voltage noise (9nV/√Hz
typ), Low current noise (0.32pA/√Hz typ), nanoamp input
currents, and 126dB minimum gain.
• High Voltage Gain . . . . . . . . . . . . . . . . . . . . 126dB (Min)
150dB (Typ)
• High CMRR . . . . . . . . . . . . . . . . . . . . . . . . . . 110dB (Min)
140dB (Typ)
These outstanding features along with high CMRR (140dB
typ, 110dB min) and high PSRR (135dB typ, 110dB min)
make this unity gain stable amplifier ideal for high resolution
data acquisition systems, precision integrators, and low level
transducer amplifiers.
• High PSRR . . . . . . . . . . . . . . . . . . . . . . . . . . 110dB (Min)
135dB (Typ)
• Low Noise. . . . . . . . . . . . . . . . . . . . . . . . 11nV/√Hz (Max)
9nV/√Hz (Typ)
• Low Power Consumption . . . . . . . . . . . . . .51mW (Max)
• Wide Gain Bandwidth Product . . . . . . . . . . .2MHz (Min)
• Unity Gain Stable
Part Number Information
PART
TEMPERATURE
RANGE
NUMBER
PACKAGE
Applications
HA4-5177/883
-55oC to +125oC
20 Lead Ceramic LCC
• High Gain Instrumentation Amplifiers
• Precision Control Systems
• Precision Integrators
• High Resolution Data Converters
• Precision Threshold Detectors
• Low Level Transducer Amplifiers
Pinout
HA-5177/883
(CLCC)
TOP VIEW
3
2
1 20 19
18
17
16
15
14
NC
V+
4
5
6
7
8
NC
-IN
-
NC
OUT
NC
NC
+IN
NC
+
9
10 11 12 13
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
Spec Number 511041-883
1-888-INTERSIL or 321-724-7143 | Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright © Intersil Americas Inc. 2002, 2004. All Rights Reserved
1
FN3733.3
HA-5177/883
Absolute Maximum Ratings
Thermal Information
Voltage Between V+ and V- Terminals . . . . . . . . . . . . . . . . . . . . 44V
Differential Input Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . 7V
Voltage at Either Input Terminal . . . . . . . . . . . . . . . . . . . . . . V+ to V-
Input Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25mA
Output Current . . . . . . . . . . . . . . . . . . . .Full Short Circuit Protection
Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC
Storage Temperature Range . . . . . . . . . . . . . . . . . -65oC to +150oC
ESD Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <2000V
Lead Temperature (Soldering 10s). . . . . . . . . . . . . . . . . . . . +300oC
Thermal Resistance
θJA
θJC
Ceramic LCC Package . . . . . . . . . . . . . .
80oC/W
28oC/W
Package Power Dissipation Limit at +75oC for TJ ≤ +175oC
Ceramic LCC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.54W
Package Power Dissipation Derating Factor Above +75oC
Ceramic LCC Package . . . . . . . . . . . . . . . . . . . . . . . . 15.4mW/oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of
the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. θJA is measured with the component mounted on a low effective thermal conductivity test board in free air. See Tech Brief
TB379 for details.
Operating Conditions
Operating Temperature Range. . . . . . . . . . . . . . . . -55oC to +125oC
V
INCM ≤ 1/2 (V+ - V-)
Operating Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±15V
RL ≥ 600Ω
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Tested at: VSUPPLY = ±15V, RSOURCE = 50Ω, RLOAD = 100kΩ, VOUT = 0V, Unless Otherwise Specified.
LIMITS
MAX
GROUP A
SUBGROUPS
PARAMETERS
SYMBOL
CONDITIONS
VCM = 0V
TEMPERATURE
+25oC
+125oC, -55oC
+25oC
MIN
-60
-100
-6
UNITS
µV
Input Offset Voltage
VIO
1
60
100
6
2, 3
1
µV
Input Bias Current
Input Offset Current
IB
VCM = 0V,
nA
RS = 10kΩ, 50Ω
2, 3
+125oC, -55oC
-8
8
nA
+I + –I
B
B
----------------------------
2
IIO
VCM = 0V,
+RS = 10kΩ,
-RS = 10kΩ
1
+25oC
+125oC, -55oC
-6
-8
6
8
nA
nA
2, 3
Common Mode
Range
+CMR
-CMR
V+ = +3V, V- = -27V
1
2, 3
1
+25oC
+125oC, -55oC
+25oC
12
12
-
V
V
-
V+ = +27V, V- = -3V
-
-12
V
2, 3
4
+125oC, -55oC
+25oC
+125oC, -55oC
+25oC
+125oC, -55oC
+25oC
+125oC, -55oC
-
-12
V
Large Signal Voltage
Gain
+AVOL
VOUT = 0V and +10V,
RL = 2kΩ
126
120
126
120
116
110
-
-
-
-
-
-
dB
dB
dB
dB
dB
dB
5, 6
4
-AVOL
VOUT = 0V and -10V,
RL = 2kΩ
5, 6
1
Common Mode
Rejection Ratio
+CMRR
∆VCM = 10V,
V+ = +5V, V- = - 25V,
2, 3
VOUT = -10
-CMRR
∆VCM = 10V,
V+ = +25V, V- = - 5V,
1
+25oC
+125oC, -55oC
116
110
-
-
dB
dB
2, 3
VOUT = +10
Output Voltage
Swing
+VOUT1
RL = 2kΩ
4
5, 6
4
+25oC
+125oC, -55oC
+25oC
+125oC, -55oC
+25oC
12
12
-
-
V
V
V
V
V
V
-
-VOUT1
RL = 2kΩ
-12
-12
-
5, 6
4
-
+VOUT2
-VOUT2
RL = 600Ω
RL = 600Ω
10
-
4
+25oC
-10
Spec Number 511041-883
2
HA-5177/883
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
Device Tested at: VSUPPLY = ±15V, RSOURCE = 50Ω, RLOAD = 100kΩ, VOUT = 0V, Unless Otherwise Specified.
LIMITS
MAX
GROUP A
SUBGROUPS
PARAMETERS
SYMBOL
CONDITIONS
VOUT = -10V
TEMPERATURE
+25oC
+125oC, -55oC
+25oC
+125oC, -55oC
+25oC
+125oC, -55oC
+25oC
MIN
15
15
-
UNITS
mA
mA
mA
mA
mA
mA
mA
mA
dB
Output Current
+IOUT
4
5, 6
4
-
-
-IOUT
VOUT = +10V
-15
-15
1.7
1.7
-
5, 6
1
-
Quiescent Power
Supply Current
+ICC
VOUT = 0V, IOUT
0mA
=
=
-
2, 3
1
-
-ICC
VOUT = 0V, IOUT
0mA
-1.7
-1.7
110
110
2, 3
1
+125oC, -55oC
+25oC
+125oC, -55oC
-
Power Supply
Rejection Ratio
+PSRR
∆VSUP = 15V,
V+ = +5V, V- = - 15V,
V+ = +20V, V- = - 15V
-
2, 3
-
dB
-PSRR
∆VSUP = 15V,
V+ = +15V, V- = - 5V,
V+ = +15V, V- = - 20V
1
+25oC
+125oC, -55oC
110
110
-
-
dB
dB
2, 3
Offset Voltage
Adjustment
+VIOAdj
-VIOAdj
Note 2
1
+25oC
+125oC, -55oC
+25oC
0.3
0.3
-
-
mV
mV
mV
mV
2, 3
1
-
Note 2
-0.3
-0.3
2, 3
+125oC, -55oC
-
NOTES:
1. The input stage has series 500Ω resistors along with back to back diodes. This provides large differential input voltage protection for a
slight increase in noise voltage.
2. This test is for functionality only to assure adjustment through 0V.
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Tested at: VSUPPLY = ±15V, RSOURCE = 50Ω, RLOAD = 2kΩ, CLOAD = 50pF, AVCL = +1V/V, Unless Otherwise Specified.
LIMITS
GROUP A
PARAMETERS
Slew Rate
SYMBOL
CONDITIONS
SUBGROUPS
TEMPERATURE
MIN
MAX
UNITS
+SR
VOUT = -3V to +3V,
7
+25oC
0.5
-
V/µs
V
IN S.R. ≤ 25V/µs
OUT = +3V to -3V,
IN S.R. ≤ 25V/µs
-SR
tR
V
V
7
7
7
+25oC
+25oC
+25oC
0.5
-
V/µs
ns
Rise and Fall Time
Overshoot
VOUT = 0 to +200mV
10% ≤ TR ≤ 90%
-
-
420
420
tF
VOUT = 0 to -200mV
10% ≤ TF ≤ 90%
ns
+OS
-OS
VOUT = 0 to +200mV
7
7
+25oC
+25oC
-
-
40
40
%
%
VOUT = 0 to -200mV
Spec Number 511041-883
3
HA-5177/883
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Characterized at: VSUPPLY = ±15V, RLOAD = 2kΩ, CLOAD = 50pF, AV = +1V/V, Unless Otherwise Specified.
LIMITS
PARAMETERS
SYMBOL
CONDITIONS
VCM = 0V
NOTES
TEMPERATURE
-55oC to +125oC
MIN
MAX
UNITS
µV/oC
Average Offset Voltage
Drift
VIOTC
1
-
0.6
Average Offset Current
Drift
I
IOTC
Versus Temperature
1
-55oC to +125oC
-
40
pA/oC
Average Bias Current Drift
IRTC
RIN
Versus Temperature
VCM = 0V
1
1
-55oC to +125oC
+25oC
-
40
-
pA/oC
Differential Input
Resistance
20
MΩ
Low Frequency
Peak-to-Peak Noise Voltage
ENP-P
INP-P
EN
0.1Hz to 10Hz
0.1Hz to 10Hz
1
1
+25oC
+25oC
-
-
0.6
45
µVP-P
Low Frequency
Peak-to-Peak Noise Current
pAP-P
Input Noise Voltage
Density
RS = 20Ω, fO = 10Hz
RS = 20Ω, fO = 100Hz
RS = 20Ω, fO = 1kHz
RS = 2MΩ, fO = 10Hz
RS = 2MΩ, fO = 100Hz
RS = 2MΩ, fO = 1kHz
1
1
1
1
1
1
1
+25oC
+25oC
+25oC
+25oC
+25oC
+25oC
+25oC
-
-
18
13
11
4
nV/√Hz
nV/√Hz
nV/√Hz
pA/√Hz
pA/√Hz
pA/√Hz
MHz
-
Input Noise Current
Density
IN
-
-
2.3
1
-
Gain Bandwidth Product
Full Power Bandwidth
GBWP
VO = 100mV,
1Hz ≤ fO ≤ 100kHz
2
-
FPBW
CLSG
V
PEAK = 10V
1, 2
1
+25oC
-55oC to +125oC
8
-
-
kHz
V/V
Minimum Closed Loop
Stable Gain
RL = 2kΩ, CL = 50pF
+1
Settling Time
tS
To 0.1% for a 10V Step
Open Loop
1
1
+25oC
+25oC
-55oC to +125oC
-
-
-
15
70
51
µs
Ω
Output Resistance
Power Consumption
ROUT
PC
VOUT = 0V, IOUT
0mA
=
1, 3
mW
NOTES:
1. Parameters listed in Table 3 are controlled via design or process parameters and are not directly tested at final production. These param-
eters are lab characterized upon initial design release, or upon design changes. These parameters are guaranteed by characterization
based upon data from multiple production runs which reflect lot to lot and within lot variation.
2. Full Power Bandwidth guarantee based on Slew Rate measurement using FPBW = Slew Rate/(2πVPEAK).
3. Power Consumption based upon Quiescent Supply Current test maximum. (No load on outputs.)
TABLE 4. ELECTRICAL TEST REQUIREMENTS
MIL-STD-883 TEST REQUIREMENTS
Interim Electrical Parameters (Pre Burn-In)
Final Electrical Test Parameters
Group A Test Requirements
SUBGROUPS (SEE TABLES 1 AND 2)
1
1 (Note 1), 2, 3, 4, 5, 6, 7
1, 2, 3, 4, 5, 6, 7
1
Groups C and D Endpoints
NOTE:
1. PDA applies to Subgroup 1 only.
Spec Number 511041-883
4
HA-5177/883
Die Characteristics
DIE DIMENSIONS:
72 x 103 x 19 mils ± 1 mils
1840 x 2620 x 483µm ± 25.4µm
METALLIZATION:
Type: Al, 1% Cu
Thickness: 16kÅ ± 2kÅ
GLASSIVATION:
Type: Nitride (Si3N4) over Silox (SIO2, 5% Phos.)
Silox Thickness: 12kÅ ± 2kÅ
Nitride Thickness: 3.5kÅ ± 1.5kÅ
WORST CASE CURRENT DENSITY:
6.0 x 104A/cm2
SUBSTRATE POTENTIAL (Powered Up): V-
TRANSISTOR COUNT: 71
PROCESS: Bipolar Dielectric Isolation
Metallization Mask Layout
HA-5177/883
BAL1
V+
OUT
NC
BAL2
-IN
+IN
V-
All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems.
Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com
Spec Number 511041-883
5
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