HA1-5114883 [INTERSIL]
Quad, Low Noise, High Performance Uncompensated Operational Amplifier; 四，低噪音，高性能未补偿运算放大器
| 型号： | HA1-5114883 |
| 厂家： | 
Intersil |
| 描述： | Quad, Low Noise, High Performance Uncompensated Operational Amplifier |
| 文件： | 总5页 (文件大小：36K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HA-5114/883
Quad, Low Noise, High Performance
Uncompensated Operational Amplifier
July 1994
Features
Description
• This Circuit is Processed in Accordance to MIL-STD- Low noise and high performance are key words describing
883 and is Fully Conformant Under the Provisions of the quad, uncompensated HA-5114/883. This general pur-
Paragraph 1.2.1.
pose amplifier offers an array of dynamic specifications
including 12V/µs slew rate (min), and 40MHz gain-band-
width-product for AVCL ≥ 10. Complementing these outstand-
ing parameters is a very low noise specification of 6nV/√Hz
at 1kHz (max).
• Low Input Noise Voltage Density at 1kHz. . . 6nV/√Hz(Max)
4.3nV/√Hz (Typ)
• High Slew Rate. . . . . . . . . . . . . . . . . . . . . . 12V/µs (Min)
20V/µs (Typ)
Fabricated using the Intersil standard high frequency D.I.
process, these operational amplifiers also offer excellent
input specifications such as 2.5mV (max) offset voltage and
75nA (max) offset current. Complementing these specifica-
tions are 100dB (min) open loop gain and 55dB channel
separation (min). Economically, HA-5114/883 also con-
sumes a very modest amount of power (225mW/ package),
while also saving board space and cost.
• Wide Gain Bandwidth Product (AVCL ≥ 10). . . 40MHz (Typ)
• High Open Loop Gain (Full Temp) . . . . . 100kV/V (Min)
250kV/V (Typ)
• High CMRR, PSRR (Full Temp). . . . . . . . . . .86dB (Min)
100dB (Typ)
• Low Offset Voltage Drift . . . . . . . . . . . . . . 3µV/oC (Typ)
This impressive combination of features make this amplifier
ideally suited for designs ranging from audio amplifiers and
active filters to the most demanding signal conditioning and
instrumentation circuits.
• No Crossover Distortion
• Standard Quad Pinout
Applications
Ordering Information
• High Quality Audio Preamplifiers
• High Q Active Filters
PART
TEMPERATURE
RANGE
NUMBER
PACKAGE
14 Lead CerDIP
• Low Noise Function Generators
• Low Distortion Oscillators
• Low Noise Comparators
o
o
HA1-5114/883
HA4-5114/883
-55 C to +125 C
o
o
-55 C to +125 C
20 Lead Ceramic LCC
Pinouts
HA-5114/883
(CERDIP)
HA-5114/883
(CLCC)
TOP VIEW
TOP VIEW
OUT 1
-IN1
OUT 4
-IN4
1
2
3
4
5
6
7
14
13
12
3
2
1
20 19
-
+
-
18 +IN4
1
2
4
3
4
5
6
7
8
+IN1
+
+ -
-
+
+IN4
+IN1
V+
1
4
17
NC
NC
V+
16 V-
11 V-
15 NC
2
3
NC
+
+
-
-
+IN2
-IN2
+IN3
10
9
+
-
+
-
14
+IN3
+IN2
-IN3
9
10 11 12 13
OUT 2
8
OUT 3
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
File Number 511015-883
File Number 3712
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 19939-124
Specifications HA-5114/883
Absolute Maximum Ratings
Thermal Information
Voltage between V+ and V- Terminals . . . . . . . . . . . . . . . . . . . . 40V
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V
Voltage at Either Input Terminal . . . . . . . . . . . . . . . . . . . . . . V+ to V-
Thermal Resistance
CerDIP Package . . . . . . . . . . . . . . . . . . .
Ceramic LCC Package . . . . . . . . . . . . . .
θ
θ
JA
JC
o
o
75 C/W
20 C/W
o
o
65 C/W
15 C/W
o
Peak Output Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Indefinite Package Power Dissipation Limit at +75 C
(One Amplifier Shorted to Ground)
CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.33W
Ceramic LCC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.54W
o
Junction Temperature (T ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175 C
J
o
o
o
Storage Temperature Range . . . . . . . . . . . . . . . . . -65 C to +150 C
ESD Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <2000V
Package Power Dissipation Derating Factor Above +75 C
CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.3mW/ C
o
o
o
Lead Temperature (Soldering 10s). . . . . . . . . . . . . . . . . . . . +300 C
Ceramic LCC Package . . . . . . . . . . . . . . . . . . . . . . . . 15.4mW/ C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Operating Conditions
o
o
Operating Temperature Range. . . . . . . . . . . . . . . . -55 C to +125 C
V
≤ 1/2 (V+ - V-)
INCM
Operating Supply Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . ±5V to ±15V R ≥ 2kΩ
L
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
= ±15V, R = 100Ω, R = 500kΩ, V = 0V, Unless Otherwise Specified.
Device Tested at: V
SUPPLY
SOURCE
LOAD
OUT
LIMITS
GROUP A
PARAMETERS
SYMBOL
CONDITIONS
SUBGROUPS TEMPERATURE
MIN
MAX
2.5
UNITS
mV
mV
nA
o
Input Offset Voltage
V
V
V
= 0V
1
2, 3
1
+25 C
-2.5
-3.0
-200
-325
-200
-325
-75
IO
CM
CM
o
o
+125 C, -55 C
3.0
o
Input Bias Current
+I
= 0V, +R = 10kΩ,
+25 C
200
325
200
325
75
B
B
S
-R = 100Ω
S
o
o
2, 3
1
+125 C, -55 C
nA
o
-I
V
= 0V, +R = 100Ω,
+25 C
nA
CM
S
-R = 10kΩ
S
o
o
2, 3
1
+125 C, -55 C
nA
o
Input Offset Current
I
V
= 0V,
CM
+25 C
nA
IO
+R = 10kΩ,
S
o
o
2, 3
+125 C, -55 C
-125
125
nA
-R = 10kΩ
S
o
Common Mode Range
+CMR
-CMR
V+ = +3V, V- = -27V
V+ = +27V, V- = -3V
1
2, 3
1
+25 C
+12
+12
-
-
V
V
o
o
+125 C, -55 C
-
o
+25 C
-12
V
o
o
2, 3
4
+125 C, -55 C
-
-12
V
o
Large Signal Voltage
Gain
+A
V
= 0V and +10V,
OUT
+25 C
100
100
100
100
86
-
-
-
-
-
-
kV/V
kV/V
kV/V
kV/V
dB
VOL
R = 2kΩ
L
o
o
5, 6
4
+125 C, -55 C
o
-A
V
= 0V and -10V,
OUT
+25 C
VOL
R = 2kΩ
L
o
o
5, 6
1
+125 C, -55 C
o
Common Mode
Rejection Ratio
+CMRR
∆V
= +5V,
+25 C
CM
V+ = +10V, V- = -20V,
o
o
2, 3
+125 C, -55 C
86
dB
V
= -5V
OUT
o
-CMRR
∆V
= -5V,
1
+25 C
86
86
-
-
dB
dB
CM
V+ = +20V, V- = -10V,
= +5V
o
o
2, 3
+125 C, -55 C
V
OUT
Spec Number 511015-883
3-125
Specifications HA-5114/883
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
Device Tested at: V
= ±15V, R
= 100Ω, R
= 500kΩ, V
= 0V, Unless Otherwise Specified.
OUT
SUPPLY
SOURCE
LOAD
LIMITS
GROUP A
PARAMETERS
SYMBOL
CONDITIONS
R = 2kΩ
SUBGROUPS TEMPERATURE
MIN
MAX
UNITS
V
o
Output Voltage Swing
+V
1
2, 3
1
+25 C
10
10
-
-
-
OUT1
L
o
o
+125 C, -55 C
V
o
-V
R = 2kΩ
+25 C
-10
-10
-
V
OUT1
L
o
o
2, 3
1
+125 C, -55 C
-
V
o
+V
R = 10kΩ
+25 C
12
12
-
V
OUT2
L
o
o
2, 3
1
+125 C, -55 C
-
V
o
-V
R = 10kΩ
+25 C
-12
-12
-
V
OUT2
L
o
o
2, 3
1
+125 C, -55 C
-
V
o
Output Current
+I
V
V
V
V
= -5V
+25 C
10
10
-
mA
mA
mA
mA
mA
mA
mA
mA
dB
dB
OUT
OUT
OUT
OUT
OUT
o
o
2, 3
1
+125 C, -55 C
-
o
-I
= +5V
= 0V, I
= 0V, I
+25 C
-10
-10
6.5
7.5
-
OUT
o
o
2, 3
1
+125 C, -55 C
-
o
Quiescent Power Supply
Current
+I
= 0mA
= 0mA
+25 C
-
CC
OUT
OUT
o
o
2, 3
1
+125 C, -55 C
-
o
-I
+25 C
-6.5
-7.5
86
86
CC
o
o
2, 3
1
+125 C, -55 C
-
o
Power Supply
Rejection Ratio
+PSRR
-PSRR
∆V
= 10V,
+25 C
-
SUP
V+ = +10V, V- = -15V
V+ = +20V, V- = -15V
o
o
2, 3
+125 C, -55 C
-
o
∆V
= 10V,
1
+25 C
86
86
-
-
dB
dB
SUP
V+ = +15V, V- = -10V
V+ = +15V, V- = -20V
o
o
2, 3
+125 C, -55 C
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
Table 2 Intentionally Left Blank. See AC Parameters in Table 3
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
= ±15V, R = 2kΩ, C = 50pF, A = 10V/V, Unless Otherwise Specified.
Device Characterized at: V
SUPPLY
LOAD
LOAD
VCL
LIMITS
PARAMETERS
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
MIN
MAX
UNITS
o
Differential Input
Resistance
R
V
= 0V
CM
1
+25 C
250
-
kΩ
IN
o
Input Noise Voltage
Input Noise Current
Gain Bandwidth Product
E
R
= 20Ω,
S
= 1000Hz
1
1
1
1
+25 C
-
6
3
-
nV/√Hz
pA/√Hz
MHz
N
f
O
o
I
R
= 2MΩ,
S
= 1000Hz
+25 C
-
N
f
O
o
GBWP
V
= 200mV,
= 30kHz
+25 C
34
40
O
f
O
o
V
= 200mV,
+25 C
-
MHz
O
f
= 1MHz
O
Spec Number 511015-883
3-126
Specifications HA-5114/883
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
Device Characterized at: V
= ±15V, R
= 2kΩ, C
= 50pF, A
= 10V/V, Unless Otherwise Specified.
SUPPLY
LOAD
LOAD
VCL
LIMITS
PARAMETERS
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
MIN
MAX
UNITS
V/µs
V/µs
kHz
o
Slew Rate
+SR
-SR
V
V
V
= -5V to +5V
= +5V to -5V
1
1
+25 C
12
12
-
-
-
-
OUT
OUT
PEAK
o
+25 C
o
Full Power Bandwidth
FPBW
CLSG
= 10V
1, 2
1
+25 C
191
10
o
o
Minimum Closed Loop
Stable Gain
R = 2kΩ, C = 50pF
-55 C to +125 C
V/V
L
L
o
Rise and Fall Time
t
V
V
V
V
= 0V to +200mV
= 0V to -200mV
= 0V to +200mV
= 0V to -200mV
1, 4
1, 4
1
+25 C
-
-
-
-
-
-
100
100
40
ns
ns
%
R
OUT
OUT
OUT
OUT
o
t
+25 C
F
o
Overshoot
+OS
-OS
+25 C
o
1
+25 C
40
%
o
Output Resistance
R
Open Loop
= 0V, I
1
+25 C
270
225
Ω
OUT
o
o
Quiescent Power
Consumption
PC
V
= 0mA
OUT
1, 3
-55 C to +125 C
mW
OUT
o
Channel Separation
CS
R
= 1kΩ,
1
+25 C
55
-
dB
S
A
= 100V/V,
VCL
V
= 100mV
at
IN
PEAK
10kHz Referred to
Input
NOTES:
1. Parameters listed in Table 3 are controlled via design or process parameters and are not directly tested at final production. These param-
eters are lab characterized upon initial design release, or upon design changes. These parameters are guaranteed by characterization
based upon data from multiple production runs which reflect lot to lot and within lot variation.
2. Full Power Bandwidth guarantee based on Slew Rate measurement using FPBW = Slew Rate/(2πV
).
PEAK
3. Quiescent Power Consumption based upon Quiescent Supply Current test maximum. (No load on outputs.).
4. Measured between 10% and 90% points.
TABLE 4. ELECTRICAL TEST REQUIREMENTS
MIL-STD-883 TEST REQUIREMENTS
Interim Electrical Parameters (Pre Burn-In)
Final Electrical Test Parameters
Group A Test Requirements
SUBGROUPS (SEE TABLE 1)
1
1 (Note 1), 2, 3, 4, 5, 6
1, 2, 3, 4, 5, 6
1
Groups C and D Endpoints
NOTE:
1. PDA applies to Subgroup 1 only.
Spec Number 511015-883
3-127
HA-5114/883
Die Characteristics
DIE DIMENSIONS:
99.6 x 95.3 x 19 mils ± 1 mils
2530 x 2420 x 483µm ± 25.4µm
METALLIZATION:
Type: Al, 1% Cu
Thickness: 16kÅ ± 2kÅ
GLASSIVATION:
Type: Nitride (Si3N4) over Silox (SiO2, 5% Phos.)
Silox Thickness: 12kÅ ± 2kÅ
Nitride Thickness: 3.5kÅ ± 1.5kÅ
WORST CASE CURRENT DENSITY:
1.43 x 105A/cm2 at 10mA
SUBSTRATE POTENTIAL (Powered Up):
Unbiased
TRANSISTOR COUNT: 175
PROCESS: Bipolar Dielectric Isolation
Metallization Mask Layout
HA-5114/883
V+
+IN2
+IN1
-IN2
-IN1
OUT2
OUT3
OUT1
OUT4
-IN3
-IN4
+IN3
V-
+IN4
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate
and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
Spec Number 511015-883
3-128
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