DG413AK/883 [INTERSIL]
Monolithic Quad SPST CMOS Analog Switches; 单片四路SPST CMOS模拟开关
| 型号： | DG413AK/883 |
| 厂家： | 
Intersil |
| 描述： | Monolithic Quad SPST CMOS Analog Switches |
| 文件： | 总10页 (文件大小：243K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
®
DG411/883, DG412/883
DG413/883
olithic Quad SPST CMOS Analog Switches
August 2003
Features
Des cription
• This Circuit is Processed in Accordance to MIL-STD-
883 and is Fully Conformant Under the Provisions of
Paragraph 1.2.1.
The DG411/883 series monolithic CMOS analog switches
are drop-in replacements for the popular DG211 and DG212
series devices. They include four independent single pole
throw (SPST) analog switches, and TTL and CMOS compat-
ible digital inputs.
• ON-Resistance <35Ω Max
• Low Power Consumption (PD <35µW)
• Fast Switching Action
- tON <175ns
These switches feature lower analog ON resistance (<35Ω)
and faster switch time (tON <175ns) compared to the DG211
or DG212. Charge injection has been reduced, simplifying
sample and hold applications.
- tOFF <145ns
• Low Charge Injection
The improvements in the DG411/883 series are made possi-
ble by using a high voltage silicon-gate process. An epitaxial
layer prevents the latch-up associated with older CMOS
technologies. The 44V maximum voltage range permits con-
trolling 40VP-P signals. Power supplies may be single-ended
from +5V to +34V, or split from ±5V to ±20V.
• Upgrade from DG211/DG212
• TTL, CMOS Compatible
• Single or Split Supply Operation
Applications
• Audio Switching
The four switches are bilateral, equally matched for AC or
bidirectional signals. The ON resistance variation with analog
signals is quite low over a ±15V analog input range. The
switches in the DG411/883 and DG412/883 are identical, dif-
fering only in the polarity of the selection logic. Two of the
switches in the DG413/883 (#1 and #4) use the logic of the
DG211 and DG411/883 (i.e. a logic “0” turns the switch ON)
and the other two switches use DG212 and DG412/883 posi-
tive logic. This permits independent control of turn-on and
turn-off times for SPDT configurations, permitting “break-
before-make” or “make-before-break” operation with a mini-
mum of external logic.
• Battery Operated Systems
• Data Acquisition
• Hi-Rel Systems
• Sample and Hold Circuits
• Communication Systems
• Automatic Test Equipment
Part Number Information
PART NUMBER
DG411AK/883
DG412AK/883
DG413AK/883
TEMP. RANGE
-55oC to +125oC
-55oC to +125oC
-55oC to +125oC
PACKAGE
16 Lead CerDIP
16 Lead CerDIP
16 Lead CerDIP
Functional Diagrams Four SPST Switches per Package Switches Shown for Logic “1” Input
DG411/883 DG412/883 DG413/883
Pinout
DG411/883, DG412/883,
DG413/883 (CERDIP)
TOP VIEW
S
S
S
1
1
1
IN
IN
IN
1
1
1
IN
D
1
2
3
4
5
6
7
8
16 IN
2
1
1
1
D
D
D
1
1
1
15 D
14 S
2
S
S
S
2
2
2
S
IN
IN
IN
IN
2
IN
IN
2
3
2
3
2
3
V-
13 V+
D
D
D
2
3
2
3
2
3
S
S
S
GND
12 V
11 S
L
3
S
D
4
4
4
D
D
D
3
4
3
4
3
4
10 D
3
S
S
S
9
IN
3
IN
IN
IN
IN
4
4
4
D
D
D
4
4
4
(NC) NO CONNECTION
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Intersil (and design) is a registered trademark of Intersil Americas Inc.
Spec Number 512043
File Number 3681.1
Copyright © Intersil Americas Inc. 2003. All Rights Reserved
1
All other trademarks mentioned are the property of their respective owners.
DG411/883, DG412/883, DG413/883
TRUTH TABLE
Pin Des cription
DG411/
883
DG412/
883
PIN
1
SYMBOL
IN1
D1
DESCRIPTION
DG413/883
Logic Control for Switch 1
SWITCH
SWITCH
2, 3
LOGIC
SWITCH
ON
SWITCH
OFF
1, 4
OFF
ON
2
Drain (Output) Terminal for Switch 1
Source (Input) Terminal for Switch 1
Negative Power Supply Terminal
Ground Terminal (Logic Common)
Source (Input) Terminal for Switch 4
Drain (Output) Terminal for Switch 4
Logic Control for Switch 4
0
1
ON
3
S1
OFF
ON
OFF
4
V-
NOTE: Logic “0” ≤0.8V. Logic “1” ≥2.4V.
5
GND
S4
6
7
D4
8
IN4
IN3
D3
9
Logic Control for Switch 3
10
11
12
13
14
15
16
Drain (Output) Terminal for Switch 3
Source (Input) Terminal for Switch 3
Logic Reference Voltage
S3
VL
V+
Positive Power Supply Terminal (Substrate)
Source (Input) Terminal for Switch 2
Drain (Output) Terminal for Switch 2
Logic Control for Switch 2
S2
D2
IN2
Spec Number 512043
2
Specifications DG411/883, DG412/883, DG413/883
Absolute Maximum Ratings
Thermal Information
V+ to V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44V Thermal Resistance (Note 3)
θJA
θJC
GND to V-. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
VL (Note 2) . . . . . . . . . . . . . . . . . . . . . . . (GND -0.3V) to (V+) +0.3V
Digital Inputs, VS, VD (Note 2) . . . . . (V-) -2V to (V+) + 2V or 30mA,
Whichever Occurs First
CerDIP Package . . . . . . . . . . . . . . . . . . .
75oC/W
20oC/W
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC
Operating Temperature (A Suffix). . . . . . . . . . . . . . -55oC to +125oC
Continuous Current (Any Terminal) . . . . . . . . . . . . . . . . . . . . . 30mA
Current, S or D (Pulsed 1ms, 10% Duty Cycle) . . . . . . . . . . . 100mA
Storage Temperature Range (A Suffix) . . . . . . . . . -65oC to +125oC
Lead Temperature (Soldering 10s). . . . . . . . . . . . . . . . . . . . +300oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Operating Conditions
Operating Voltage Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20V Max
Operating Temperature Range. . . . . . . . . . . . . . . . -55oC to +125oC
Input Low Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.8V Max
Input High Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.4V Min
Input Rise and Fall Time. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .≤20ns
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Tested at: V+ = +15V, V- = -15V, VL = 5V, GND = 0V, Unless Otherwise Specified
LIMITS
SUBGROUP TEMPERATURE MIN MAX UNITS
GROUP A
PARAMETERS
Drain-to-Source
SYMBOL
CONDITIONS
RDS(ON)
V+ = +13.5V,
VIN = 0.8V
1, 3
+25oC, -55oC
0
35
Ω
ON Resistance
V- = -13.5V,
IS = -10mA,
VD = ±8.5V
DG411/883
2
1, 3
2
+125oC
+25oC, -55oC
+125oC
+25oC, -55oC
+125oC
+25oC, -55oC
+125oC
+25oC, -55oC
+125oC
0
0
0
0
0
0
0
0
0
0
0
45
35
Ω
Ω
DG412/883
VIN = 2.4V
45
Ω
DG413/883
DG411/883
DG412/883
DG413/883
VIN = 0.8V or
2.4V (Note 1)
1, 3
2
35
Ω
45
Ω
V+ = +10.8V,
V- = -0V,
IS = -10mA,
VD = 3.0V and
8.0V
VIN = 0.8V
1, 3
2
80
Ω
100
80
Ω
VIN = 2.4V
1, 3
2
Ω
100
80
Ω
VIN = 0.8V or
2.4V (Note 1)
1, 3
2
+25oC, -55oC
+125oC
Ω
100
Ω
Source OFF Leakage Current
DG411/883
IS(OFF)
V+ = 16.5V,
V- = -16.5V,
VD = -15.5V,
VS = 15.5V
VIN = 2.4V
1
+25oC
+125oC, -55oC
+25oC
+125oC, -55oC
+25oC
+125oC, -55oC
+25oC
+125oC, -55oC
+25oC
+125oC, -55oC
+25oC
-0.25 +0.25
-20 +20
-0.25 +0.25
-20 +20
-0.25 +0.25
-20 +20
-0.25 +0.25
-20 +20
-0.25 +0.25
-20 +20
-0.25 +0.25
-20 +20
nA
nA
nA
nA
nA
nA
nA
nA
nA
nA
nA
nA
2, 3
1
DG412/883
VIN = 0.8V
2, 3
1
DG413/883
DG411/883
DG412/883
DG413/883
VIN = 0.8V or
2.4V (Note 1)
2, 3
1
V+ = 16.5V,
V- = -16.5V,
VD = 15.5V,
VS = -15.5V
VIN = 2.4V
2, 3
1
VIN = 0.8V
2, 3
1
VIN = 0.8V or
2.4V (Note 1)
2, 3
+125oC, -55oC
Spec Number 512043
3
Specifications DG411/883, DG412/883, DG413/883
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
Device Tested at: V+ = +15V, V- = -15V, VL = 5V, GND = 0V, Unless Otherwise Specified
LIMITS
SUBGROUP TEMPERATURE MIN MAX UNITS
-0.25 +0.25
-20 +20
-0.25 +0.25
-20 +20
-0.25 +0.25
-20 +20
-0.25 +0.25
-20 +20
-0.25 +0.25
-20 +20
-0.25 +0.25
GROUP A
PARAMETERS
Drain OFF Leakage Current
DG411/883
SYMBOL
CONDITIONS
ID(OFF)
V+ = 16.5V,
VIN = 2.4V
1
2, 3
1
+25oC
+125oC, -55oC
+25oC
+125oC, -55oC
+25oC
+125oC, -55oC
+25oC
+125oC, -55oC
+25oC
nA
nA
nA
nA
nA
nA
nA
nA
nA
nA
nA
nA
nA
nA
nA
nA
nA
nA
µA
V- = -16.5V,
VD = -15.5V,
VS = 15.5V
DG412/883
VIN = 0.8V
2, 3
1
DG413/883
DG411/883
DG412/883
DG413/883
VIN = 0.8V or
2.4V (Note 1)
2, 3
1
V+ = 16.5V,
V- = -16.5V,
VD = 15.5V,
VS = -15.5V
VIN = 2.4V
2, 3
1
VIN = 0.8V
2, 3
1
+125oC, -55oC
+25oC
VIN = 0.8V or
2.4V (Note 1)
2, 3
1
+125oC, -55oC
+25oC
+125oC, -55oC
+25oC
+125oC, -55oC
+25oC
+125oC, -55oC
-20
-0.4
-40
+20
+0.4
+40
+0.4
+40
+0.4
+40
+0.5
Channel ON Leakage Current
DG411/883
ID(ON) +
IS(ON)
V+ = 16.5V,
VIN = 0.8V
V- = -16.5V,
2, 3
1
VS = VD = ±15.5V
DG412/883
VIN = 2.4V
-0.4
-40
2, 3
1
DG413/883
VIN = 0.8V or
2.4V (Note 1)
-0.4
-40
2, 3
1, 2, 3
Input Current with VIN Low
Input Current with VIN High
Positive Supply Current
IIL
IIH
I+
Input Under Test = 0.8V,
All Others = 2.4V
+25oC, +125oC,
-55oC
-0.5
Input Under Test = 2.4V,
All Others = 0.8V
1, 2, 3
+25oC, +125oC,
-55oC
-0.5
+0.5
µA
V+ = 16.5V, V- = -16.5,
VIN = 0Vor 5.0V
1
+25oC
+125oC, -55oC
+25oC
-
-
-
-
+1.0
+5.0
+1.0
+5.0
µA
µA
µA
µA
2, 3
1
V+ = 13.2V, V- = 0V,
VIN = 0Vor 5.0V
VL = 5.25V
2, 3
+125oC, -55oC
Negative Supply Current
Logic Supply Current
Ground Current
I-
V+ = 16.5V, V- = -16.5,
VIN = 0V or 5.0V
1
+25oC
+125oC, -55oC
+25oC
-1.0
-5.0
-1.0
-5.0
-
-
-
-
µA
µA
µA
µA
2, 3
1
V+ = 13.2V, V- = 0V,
VIN = 0V or 5.0V
VL = 5.25V
2, 3
+125oC, -55oC
IL
V+ = 16.5V, V- = -16.5,
VIN = 0V or 5.0V
1
+25oC
+125oC, -55oC
+25oC
-
-
-
-
+1.0
+5.0
+1.0
+5.0
µA
µA
µA
µA
2, 3
1
V+ = 13.2V, V- = 0V,
VIN = 0V or 5.0V
VL = 5.25V
2, 3
+125oC, -55oC
IGND
V+ = 16.5V, V- = -16.5,
VIN = 0V or 5.0V
1
+25oC
+125oC, -55oC
+25oC
-1.0
-5.0
-1.0
-5.0
-
-
-
-
µA
µA
µA
µA
2, 3
1
V+ = 13.2V, V- = 0V,
VIN = 0V or 5.0V
VL = 5.25V
2, 3
+125oC, -55oC
Spec Number 512043
4
Specifications DG411/883, DG412/883, DG413/883
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Tested at: V+ = +15V, V- = -15V, VL = 5V, GND = 0V, Unless Otherwise Specified
LIMITS
SUBGROUP TEMPERATURE MIN MAX UNITS
GROUP A
PARAMETERS
Turn ON Time
SYMBOL
CONDITIONS
tON
CL = 35pF, VS = ±10V,
RL = 300Ω
9, 11
10
+25oC, -55oC
+125oC
0
175
240
250
400
ns
ns
ns
ns
0
0
0
V+ = 12V, V- = 0V,
CL = 35pF, VS = +8V,
RL = 300Ω
9, 11
10
+25oC, -55oC
+125oC
Turn OFF Time
tOFF
CL = 35pF, VS = ±10V,
RL = 300Ω
9, 11
10
+25oC, -55oC
+125oC
+25oC, -55oC
+125oC
0
0
0
0
145
160
125
140
ns
ns
ns
ns
V+ = 12V, V- = 0V,
CL = 35pF, VS = +8V,
RL = 300Ω
9, 11
10
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (NOTE 1)
Device Tested at: V+ = +15V, V- = -15V, VL = 5V, GND = 0V, Unless Otherwise Specified
LIMITS
SUBGROUP TEMPERATURE MIN MAX UNITS
GROUP A
PARAMETERS
Charge Injection
SYMBOL
CONDITIONS
Q
See Figure 2, VG = 0V, RG = 0Ω,
9
9
+25oC
+25oC
+25oC
+25oC
-100
+100
pC
pC
pC
pC
T
A = +25oC, CL = 10nF
See Figure 2,
-100
+100
VG = 6V, RG = 0Ω, TA = +25oC
CL = 10nF, V+ = 12V, V- = 0V
NOTES:
1. VIN = Input Voltage to Perform Proper Function.
2. Signals on SX, DX or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
3. All leads soldered or welded to PC board.
4. Parameters listed in Table 3 are controlled via design or process and are not directly tested at final production. These parameters are lab
characterized upon initial design release or upon design changes. These parameters are guaranteed by characterization based upon
data from multiple production runs which reflect lot to lot and within lot variation.
TABLE 4. ELECTRICAL TEST REQUIREMENTS
MIL-STD-883 TEST REQUIREMENTS
Interim Electrical Parameters (Pre Burn-In)
Final Electrical Test Parameters
Group A Test Requirements
SUBGROUPS (SEE TABLES 1 AND 2)
1
1 (Note 1), 2, 3, 9, 10, 11
1, 2, 3, 9, 10, 11
1
Groups C and D Endpoints
NOTE:
1. PDA applies to Subgroup 1 only.
Spec Number 512043
5
DG411/883, DG412/883, DG413/883
Die Characteris tics
DIE DIMENSIONS:
2760µm x 1780µm x 485 ± 25µm
METALLIZATION:
Type: SiAl
Thickness: 12kÅ ± 1kÅ
GLASSIVATION:
Type: Nitride
Thickness: 8kÅ ± 1kÅ
WORST CASE CURRENT DENSITY:
1.5 x 105A/cm2
Metallization Mas k Layout
DG411/883, DG412/883, DG413/883
D
IN
IN
2
1
1
16
1
15
D
S
2
2
14
3
2
S
1
13
12
V+ SUBSTRATE
4
5
V-
V
L
GND
11
10
S
3
6
7
S
4
9
8
D
IN
IN
D
3
4
4
3
Spec Number 512043
6
DG411/883, DG412/883, DG413/883
Tes t Circuits
V+
VO is the steady state output with the switch on.
Feedthrough via switch capacitance may result in spikes at
the leading and trailing edge of the output waveform.
R
G
D
1
V
O
t
t
< 20ns (10% to 90% V
< 20ns (90% to 10% V
)
)
R
F
IN
V
IN
G
C
3V
0V
L
LOGIC
INPUT
V-
50%
V
= 3V
IN
t
OFF
GND
SWITCH
INPUT
V
S
FIGURE 2A.
V
O
0.9 V
0.9 V
O
O
SWITCH
OUTPUT
0V
t
ON
∆V
O
NOTE: Logic input waveform is inverted for switches that have
the opposite logic sense.
0V
IN
FIGURE 1A.
X
OFF
OFF
ON
ON
+5V
+15V
V
V+
L
SWITCH
OUTPUT
D
OFF
OFF
1
Q = ∆V x C
SWITCH
INPUT
O
L
S
V
1
1
IN
X
O
IN
INX dependent on switch configuration input polarity determined by
sense of switch.
C
R
L
L
LOGIC
INPUT
V-
-15V
FIGURE 2B.
GND
FIGURE 2. CHARGE INJECTION
Repeat test for all IN and S.
For load conditions, see Specifications CL (includes fixture and
stray capacitance)
R
L
V
= V ---------------------------------
O
S
R
L + R
DS(ON)
FIGURE 1B.
FIGURE 1. SWITCHING TIME
Spec Number 512043
7
DG411/883, DG412/883, DG413/883
Burn-In Circuit
DG411/883, DG412/883, DG413/883 CERAMIC DIP
IN
D
IN
D
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
2
2
2
1
1
R
2
R
S
1
S
1
V+
V-
V-
V+
C
D
D
1
1
2
C
C
2
3
V
L
GND
S
3
S
4
D
3
D
4
V
L
V
IN
3
A
IN
4
D
3
R
R
4
4
Typical Schematic Diagram (Typical Channel)
V+
S
V-
V
L
V+
IN
X
D
GND
V-
Spec Number 512043
8
DG411/883, DG412/883, DG413/883
Ceramic Dual-In-Line Frit Seal Packages (CerDIP)
c1 LEAD FINISH
F16.3 MIL-STD-1835 GDIP1-T16 (D-2, CONFIGURATION A)
16 LEAD CERAMIC DUAL-IN-LINE FRIT SEAL PACKAGE
-D-
E
-A-
INCHES
MIN
MILLIMETERS
BASE
(c)
METAL
SYMBOL
MAX
0.200
0.026
0.023
0.065
0.045
0.018
0.015
0.840
0.310
MIN
-
MAX
5.08
0.66
0.58
1.65
1.14
0.46
0.38
21.34
7.87
NOTES
b1
A
b
-
-
M
M
0.014
0.014
0.045
0.023
0.008
0.008
-
0.36
0.36
1.14
0.58
0.20
0.20
-
2
-B-
(b)
b1
b2
b3
c
3
SECTION A-A
S
S
S
D
bbb
C A - B
D
-
4
BASE
PLANE
Q
2
A
-C-
SEATING
PLANE
c1
D
3
L
α
5
S1
b2
eA
A A
e
E
0.220
5.59
5
eA/2
b
C A - B
c
e
0.100 BSC
2.54 BSC
-
eA
eA/2
L
0.300 BSC
0.150 BSC
7.62 BSC
3.81 BSC
-
M
S
S
M
S
S
D
ccc
D
aaa
C A - B
-
NOTES:
0.125
0.200
0.060
-
3.18
5.08
1.52
-
-
1. Index area: A notch or a pin one identification mark shall be locat-
ed adjacent to pin one and shall be located within the shaded
area shown. The manufacturer’s identification shall not be used
as a pin one identification mark.
Q
0.015
0.38
6
S1
0.005
0.13
7
90o
105o
0.015
0.030
0.010
0.0015
90o
105o
0.38
0.76
0.25
0.038
-
α
aaa
bbb
ccc
M
2. The maximum limits of lead dimensions b and c or M shall be
measured at the centroid of the finished lead surfaces, when
solder dip or tin plate lead finish is applied.
-
-
-
-
-
-
-
-
-
-
-
3. Dimensions b1 and c1 apply to lead base metal only. Dimension
M applies to lead plating and finish thickness.
2, 3
8
4. Corner leads (1, N, N/2, and N/2+1) may be configured with a
partial lead paddle. For this configuration dimension b3 replaces
dimension b2.
N
16
16
Rev. 0 4/94
5. This dimension allows for off-center lid, meniscus, and glass
overrun.
6. Dimension Q shall be measured from the seating plane to the
base plane.
7. Measure dimension S1 at all four corners.
8. N is the maximum number of terminal positions.
9. Dimensioning and tolerancing per ANSI Y14.5M - 1982.
10. Controlling dimension: INCH.
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice.
Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reli-
able. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may
result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
Spec Number 512043
9
DG411, DG412
DG413
DESIGN INFORMATION
Monolithic Quad SPST CMOS Analog Switches
The information contained in this section has been developed through characterization by Intersil Corporation and is for use as application
and design information only. No guarantee is implied.
Typical Performance Curves
ON-RESISTANCE vs VD AND POWER SUPPLY VOLTAGE
SWITCHING TIME vs TEMPERATURE
V+ = 15V, V- = -15V
50
240
210
180
150
120
90
A: ±5V
B: ±8V
45
V
= 5V, V = 10V
L
S
A
C: ±10V
D: ±12V
40
E: ±15V
F: ±20V
35
B
30
t
C
ON
25
D
t
E
20
15
10
5
OFF
F
60
30
o
T
= +25 C
A
0
0
-20
-15
-10
-5
0
5
10
15
20
-55 -35
-15
5
25
45
65
85
105
125
o
DRAIN VOLTAGE (V)
TEMPERATURE ( C)
LEAKAGE CURRENT vs ANALOG VOLTAGE
SUPPLY CURRENT vs INPUT SWITCHING FREQUENCY
40
100mA
V+ = 15V, V- = -15V
o
V+ = 15V, V- = -15V
V = 5V
L
30
20
V
= 5V, T = 25 C
L
A
10mA
1mA
I
D(OFF)
10
I+, I-
0
100µA
10µA
1µA
I
S(OFF)
4SW
-10
-20
-30
-40
-50
-60
I
D + S(ON)
I
L
4SW
1SW
100nA
10nA
1SW
10
100
1K
10K
100K
1M
10M
-15
-10
-5
0
5
10
15
DRAIN OR SOURCE VOLTAGE (V)
FREQUENCY (Hz)
CHARGE INJECTION vs ANALOG VOLTAGE (VD)
CHARGE INJECTION vs ANALOG VOLTAGE (VS)
100
140
V+ = 15V, V- = -15V
= 5V
V+ = 15V, V- = -15V
120
100
80
V
V = 5V
C
= 10nF
L
L
80
60
40
20
0
L
C
= 1nF
L
60
C
= 10nF
L
40
20
0
-20
-40
-60
C
= 1nF
-20
-40
-60
L
-15
-10
-5
0
5
10
15
-15
-10
-5
0
5
10
15
SOURCE VOLTAGE (V)
DRAIN VOLTAGE (V)
Spec Number 512043
10
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