ACS157HMSR-02 [INTERSIL]
Radiation Hardened Quad 2-Input Non-Inverting Multiplexer; 抗辐射四2输入非反相多路复用器型号: | ACS157HMSR-02 |
厂家: | Intersil |
描述: | Radiation Hardened Quad 2-Input Non-Inverting Multiplexer |
文件: | 总2页 (文件大小:51K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
ACS157MS
Radiation Hardened
Quad 2-Input Non-Inverting Multiplexer
December 1997
Features
Description
• QML Qualified Per MIL-PRF-38535 Requirements
• 1.25Micron Radiation Hardened SOS CMOS
The Radiation Hardened ACS157MS is a Quad 2-Channel
Non-Inverting Multiplexer which selects four bits of data from
one of two sources under the control of a single Select pin.
The Output Enable input is active LOW and controls all out-
puts. When E is set HIGH, all outputs are forced LOW,
regardless of all other input conditions. All inputs are buff-
ered and the outputs are designed for balanced propagation
delay and transition times.
• Radiation Environment
- Latch-up Free Under any Conditions
5
- Total Dose . . . . . . . . . . . . . . . . . . . . . . 3 x 10 RAD(Si)
-10
- SEU Immunity. . . . . . . . . . . <1 x 10
Errors/Bit/Day
2
- SEU LET Threshold . . . . . . . . . . . >100MeV/(mg/cm )
The ACS157MS is fabricated on a CMOS Silicon on Sap-
phire (SOS) process, which provides an immunity to Single
Event Latch-up and the capability of highly reliable perfor-
mance in any radiation environment. These devices offer
significant power reduction and faster performance when
compared to ALSTTL types.
• Input Logic Levels . . . V = (0.3)(Vcc), V = (0.7)(Vcc)
IL IH
• Output Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±12mA
• Quiescent Supply Current. . . . . . . . . . . . . . . . . . . .20µA
• Propagation Delay . . . . . . . . . . . . . . . . . . . . . . . . . . 14ns
Specifications for Rad Hard QML devices are controlled
by the Defense Supply Center in Columbus (DSCC). The
SMD numbers listed below must be used when ordering.
Applications
• 4-Bit Source Selection
• Data Routing
Detailed Electrical Specifications for the ACS157 are
contained in SMD 5962-98536. A “hot-link” is provided
on our homepage with instructions for downloading.
http://www.intersil.com/data/sm/index.htm
• High Frequency Switching
Ordering Information
o
SMD PART NUMBER
INTERSIL PART NUMBER
ACS157DMSR-02
TEMP. RANGE ( C)
PACKAGE
16 Ld SBDIP
CASE OUTLINE
CDIP2-T16
CDIP2-T16
CDFP4-F16
CDFP4-F16
N/A
5962F9853601VEC
-55 to 125
N/A
ACS157D/Sample-02
ACS157KMSR-02
25
-55 to 125
25
16 Ld SBDIP
16 Ld Flatpack
16 Ld Flatpack
Die
5962F9853601VXC
N/A
N/A
ACS157K/Sample-02
ACS157HMSR-02
25
Pinouts
ACS157 (SBDIP)
TOP VIEW
ACS157 (FLATPACK)
TOP VIEW
S
1
2
3
4
5
6
7
8
16 VCC
15 E
S
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
V
E
CC
1I
0
1
1I
1I
0
1
1I
14 4I
0
4I
4I
0
1
1Y
13 4I
1Y
1
2I
0
4Y
2I
0
12 4Y
2I
3I
3I
1
0
1
2I
11 3I
10 3I
1
0
1
2Y
2Y
GND
3Y
9
3Y
GND
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
File Number 4462
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
1
ACS157MS
Die Characteristics
DIE DIMENSIONS:
PASSIVATION
Size: 2390µm x 2390µm (94 mils x 94 mils)
Thickness: 525µm ±25µm (20.6 mils ±1 mil)
Bond Pad: 110µm x 110µm (4.3 x 4.3 mils)
Type: Phosphorous Silicon Glass (PSG)
Thickness: 1.30µm ±0.15µm
SPECIAL INSTRUCTIONS:
METALLIZATION: Al
Metal 1 Thickness: 0.7µm ±0.1µm
Metal 2 Thickness: 1.0µm ±0.1µm
Bond V
CC
First
ADDITIONAL INFORMATION:
5
2
Worst Case Density: <2.0 x 10 A/cm
Transistor Count: 150
SUBSTRATE POTENTIAL:
Unbiased Insulator
Metallization Mask Layout
ACS157MS
1I
S
V
OE
0
CC
1I
4I
4I
1
0
1
1Y
2I
2I
4Y
0
1
3I
0
2Y
GND
3Y
3I
1
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate
and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
2
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