IF140 [INTERFET]
N-Channel Silicon Junction Field-Effect Transistor; N沟道硅结型场效应晶体管
| 型号： | IF140 |
| 厂家： | 
INTERFET CORPORATION |
| 描述： | N-Channel Silicon Junction Field-Effect Transistor |
| 文件： | 总1页 (文件大小：95K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
B-28
01/99
IF140, IF140A
N-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at T = 25¡C
¥ Low-Noise, High Gain
Amplifiers
A
Reverse Gate Source & Reverse Gate Drain Voltage
– 20 V
10 mA
375 mW
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
3 mW/°C
Storage Temperature Range
– 65°C to 200°C
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
IF140
IF140A
Process NJ14AL
Test Conditions
I = – 1 µA, V = ØV
Min Max Min Max Unit
V
– 20
– 20
V
– 0.1 nA
– 0.2 nA
(BR)GSS
G
DS
– 0.1
– 0.2
– 6
V
= – 15V, V = ØV
GS
DS
Gate Reverse Current
I
GSS
V
= – 15V, V = ØV
T = 150°C
GS
DS
A
Gate Source Cutoff Voltage
Gate Source Voltage
V
– 6
V
V
V
= 15V, I = 5 nA
GS(OFF)
DS
D
V
– 5 – 2.5 – 6
V
= 15V, I = 50 µA
GS
DS
D
Gate Source Forward Voltage
Drain Saturation Current (Pulsed)
V
1
1
V
V
= Ø, I = 1 mA
GS(F)
DS
G
I
5
15
5
15
mA
V
= 15V, V = ØV
DSS
DS
GS
Dynamic Electrical Characteristics
Common Source Forward Transmittance
Common Source Output Conductance
Common Source Input Capacitance
Y
4.5
4.5
mS
V
= 15V, V = ØV
f = 1 kHz
f = 1 kHz
f = 1 MHz
fs
DS
GS
Y
0.05
3
0.05 µS
V
= 15V, V = ØV
os
DS
GS
C
3
pF
V
= 15V, V = ØV
iss
DS
GS
Common Source Reverse
Transfer Capacitance
C
0.6
0.6
pF
V
= 15V, V = ØV
f = 1 MHz
rss
DS
GS
Typ
Typ
Equivalent Short Circuit
Input Noise Voltage
nV/√Hz
e¯
4
4
V
= 12V, V = ØV
f = 10 Hz
N
DS
GS
TOÐ72 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Drain, 3 Gate, 4 Case
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
www.interfet.com
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