2N6450 [INTERFET]
N-Channel Silicon Junction Field-Effect Transistor; N沟道硅结型场效应晶体管
| 型号： | 2N6450 |
| 厂家： | 
INTERFET CORPORATION |
| 描述： | N-Channel Silicon Junction Field-Effect Transistor |
| 文件： | 总1页 (文件大小：93K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
B-24
01/99
2N6449, 2N6450
N-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at T = 25¡C
¥ High Voltage
A
2N6449
– 300 V
– 300 V
10 mA
2N6450
– 200 V
– 200 V
10 mA
Reverse Gate Source Voltage
Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
800 mW
800 mW
6.4 mW/°C 6.4 mW/°C
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
2N6449
2N6450
Process NJ42
Test Conditions
Min Max Min Max Unit
V
– 300
– 200
V
nA
I = – 10 µA, V = ØV
G DS
(BR)GSS
– 100
– 100
V
= – 150V, V = ØV
GS
DS
– 100 nA
µA
V
= – 100V, V = ØV
GS
DS
Gate Reverse Current
I
GSS
V
= – 150V, V = ØV
T = 150°C
GS
DS
A
– 100 µA
V
= – 100V, V = ØV
T = 150°C
GS
DS
A
Gate Source Cutoff Voltage
V
– 2 – 15 – 2 – 15
V
V
= 30V, I = 4 nA
GS(OFF)
DS
D
Drain Saturation Current (Pulsed)
I
2
10
2
10
mA
V
= 30V, V = ØV
DSS
DS
GS
Dynamic Electrical Characteristics
Common Source Forward
Transfer Admittance
Y
0.5
3
0.5
3
mS
V
= 30V, V = ØV
f = 1 kHz
fs
DS
GS
Common Source Output Conductance
Common Source Input Capacitance
Y
100
20
100 µS
V
= 30V, V = ØV
f = 1 kHz
f = 1 MHz
os
DS
GS
C
20
pF
V
= 30V, V = ØV
iss
DS
GS
Common Source
Reverse Transfer Capacitance
C
2.5
2.5
pF
V
= 30V, V = ØV
f = 1 MHz
rss
DS
GS
TOÐ39 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Drain, 3 Gate & Case
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
www.interfet.com
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